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相关论文: From Slater to Mott physics: epitaxial engineering…

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Novel phases of two dimensional electron systems resulting from new surface or interface modified electronic structures have generated significant interest in material science. We utilize photoemission spectroscopy to show that the…

We present a theoretical study of a model heterostructure for a Mott-insulator sandwiched between two band insulators, such as SrTiO3/LaTiO3. Particular emphasis is given on the interplay between magnetism and inhomogeneous charge…

强关联电子 · 物理学 2013-02-19 Suguru Ueda , Norio Kawakami , Manfred Sigrist

The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide…

Strong electron-electron interaction can induce Mott insulating state, which is believed to host unusual correlated phenomena such as quantum spin liquid when quantum fluctuation dominates and unconventional superconductivity through…

强关联电子 · 物理学 2025-04-24 Qiang Gao , Haiyang Chen , Wen-shin Lu , Yang-hao Chan , Zhenhua Chen , Yaobo Huang , Zhengtai Liu , Peng Chen

Thermally activated abrupt switching between localized and itinerant electronic states during the insulator-metal transition (IMT) in correlated oxide systems serves as a powerful platform for exploring exotic physical phenomena and device…

强关联电子 · 物理学 2025-11-11 Xuanchi Zhou , Xiaohui Yao , Xiaomei Qiao

The modulation of channel conductance in field-effect transistors (FETs) via metal-oxide-semiconductor (MOS) structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical…

The layered molecular conductors $\kappa$-(BEDT-TTF)$_2$X are a perfect experimental platform for studying the physics of the Mott transition and related exotic electronic states. In these materials, the subtle balance between various…

Recent progress in growth and characterization of thin-film VO$_2$ has shown its electronic properties can be significantly modulated by epitaxial matching. To throw new light on the concept of `Mott engineering', we develop a…

材料科学 · 物理学 2022-02-02 Christopher N. Singh , L. F. J Piper , Hanjong Paik , Darrell G. Schlom , Wei-Cheng Lee

Elucidating the physics of the single-orbital Hubbard model in its intermediate coupling regime is a key missing ingredient to our understanding of metal-insulator transitions in real materials. Using recent non-perturbative many-body…

强关联电子 · 物理学 2024-10-10 Maria Chatzieleftheriou , Silke Biermann , Evgeny A. Stepanov

Mott insulating behavior is induced by strong electron correlation and can lead to exotic states of matter such as unconventional superconductivity and quantum spin liquids. Recent advances in van der Waals material synthesis enable the…

Spin-orbit torque (SOT) enables efficient electrical control of magnetization, offering a pathway towards low-power spintronic devices. Magnetic topological insulators (TIs), with spin-momentum-locked surface states and intrinsic…

介观与纳米尺度物理 · 物理学 2026-05-21 Ling-Jie Zhou , Deyi Zhuo , Han Tay , Zi-Jie Yan , Pu Xiao , Xiaoda Liu , Bomin Zhang , Cui-Zu Chang

By combining 5d transition-metal oxides showing pronounced spin-orbit interactions and oxide-based heterostructures, we propose rutile-based IrO2/TiO2 superlattices as promising candidates for unconventional electronic properties. By means…

强关联电子 · 物理学 2017-02-16 Xing Ming , Kunihiko Yamauchi , Tamio Oguchi , Silvia Picozzi

We investigate the metal-to-insulator phase transition driven by the density-density electronic interaction in the quarter-filled model on a cubic lattice with two orbitals split by a crystal field. We show that a systematic consideration…

强关联电子 · 物理学 2023-05-30 M. Vandelli , J. Kaufmann , V. Harkov , A. I. Lichtenstein , K. Held , E. A. Stepanov

We study the effects of an orbital magnetic field on the Mott metal-insulator transition in the Hubbard-Hofstadter model. We demonstrate that sufficiently large magnetic fields induce a Mott insulator-to-metal phase transition supporting…

强关联电子 · 物理学 2025-10-28 Georg Rohringer , Anton A. Markov

Recent theory and experiment have revealed that strong spin-orbit coupling can have dramatic qualitative effects on the band structure of weakly interacting solids. Indeed, it leads to a distinct phase of matter, the topological band…

强关联电子 · 物理学 2015-05-13 D. A. Pesin , Leon Balents

To study digital Mott insulator LaTiO3 and band insulator SrTiO3 interfaces, we apply correlated band theory (LDA+U) to (n,m) multilayers, 1<n,m<9. If the on-site repulsion on Ti is large enough to model the magnetic insulating behavior of…

材料科学 · 物理学 2007-05-23 Rossitza Pentcheva , Warren E. Pickett

Managing light-matter interactions on timescales faster than the loss of electronic coherence is key for achieving full quantum control of the final products in solid-solid transformations. In this work, we demonstrate coherent electronic…

Identifying and characterizing the parent phases of iron-based superconductors is an important step towards understanding the mechanism for their high temperature superconductivity. We present an investigation into the magnetic interactions…

强关联电子 · 物理学 2015-06-18 E. E. McCabe , C. Stock , E. E. Rodriguez , A. S. Wills , J. W. Taylor , J. S. O. Evans

We study the magnetic properties around the Mott transition in the Kagom\'e lattice Hubbard model by the cellular dynamical mean field theory combined with quantum Monte Carlo simulations. By investigating the q-dependence of the…

强关联电子 · 物理学 2009-11-11 Takuma Ohashi , Sei-ichiro Suga , Norio Kawakami , Hirokazu Tsunetsugu

Controlling the insulator-metal transition (IMT) in correlated oxide system through oxygen vacancy ordering opens up a new paradigm for exploring exotic structural transformation and physical functionality. Oxygen vacancy serves as a…

材料科学 · 物理学 2025-12-19 Xuanchi Zhou , Xiaohui Yao , Xiaomei Qiao , Jiahui Ji , Guowei Zhou , Huihui Ji , Xiaohong Xu
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