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A doped graphene layer in the integer quantum Hall regime reveals a highly unusual particle-hole excitation spectrum, which is calculated from the dynamical polarizability in the random phase approximation. We find that the elementary…

介观与纳米尺度物理 · 物理学 2009-08-07 R. Roldan , J. -N. Fuchs , M. O. Goerbig

We report on numerical studies into the interplay of disorder and electron-electron interactions within the integer quantum Hall regime, where the presence of a strong magnetic field and two-dimensional confinement of the electronic system…

介观与纳米尺度物理 · 物理学 2008-01-23 R. A. Römer , C. Sohrmann

We consider the pairing of electrons and holes due to their Coulomb attraction in two parallel, independently gated graphene layers, separated by a barrier. At weak coupling, there exist the BCS-like pair-condensed state. Despite the fact…

强关联电子 · 物理学 2009-11-13 Yu. E. Lozovik , A. A. Sokolik

Motivated by the notion that a preponderance of Coulomb interactions might lead to hydrodynamics, we carry out an ab initio calculation of the charge carrier transport properties of the electron-hole plasma of doped graphene. We include…

材料科学 · 物理学 2026-01-05 Dwaipayan Paul , Nakib H. Protik

The electronic states of an electrostatically confined cylindrical graphene quantum dot and the electric transport through this device are studied theoretically within the continuum Dirac-equation approximation and compared with numerical…

介观与纳米尺度物理 · 物理学 2011-08-12 G. Pal , W. Apel , L. Schweitzer

We investigate the spin Hall effect in a single-layer graphene device with disorder and interface-induced spin-orbit coupling. Our graphene device is connected to four semi-infinite leads that are embedded in a {Landauer-B\"uttiker} setup…

介观与纳米尺度物理 · 物理学 2022-11-11 Juliana M. da Silva , Fernando A. F. Santana , Jorge G. G. S. Ramos , Anderson L. R. Barbosa

By using four-terminal configurations, we investigated the dependence of longitudinal and diagonal resistances of a graphene p-n interface on the quantum-Hall edge-state equilibration position. The resistance of a p-n device in our…

介观与纳米尺度物理 · 物理学 2012-03-05 Dong-Keun Ki , Seung-Geol Nam , Hu-Jong Lee , Barbaros Oezyilmaz

Raman spectroscopy is a fast, non-destructive means to characterize graphene samples. In particular, the Raman spectra show a significant dependence on doping. While the change in position and width of the G peak can be explained by the…

材料科学 · 物理学 2015-05-13 D. M. Basko , S. Piscanec , A. C. Ferrari

We study how the electron-hole pairing reveals itself in the response of a double layer graphene system to the vector and scalar potentials. Electron-hole pairing results in a rigid (London)relation between the current and the difference of…

介观与纳米尺度物理 · 物理学 2015-04-02 K. V. Germash , D. V. Fil

The effect of electron-electron interaction on the low-temperature conductivity of graphene is investigated experimentally. Unlike in other two-dimensional systems, the electron-electron interaction correction in graphene is sensitive to…

介观与纳米尺度物理 · 物理学 2015-05-18 A. A. Kozikov , A. K. Savchenko , B. N. Narozhny , A. V. Shytov

We investigate transport in a gate-defined graphene quantum point contact in the quantum Hall regime. Edge states confined to the interface of p and n regions in the graphene sheet are controllably brought together from opposite sides of…

介观与纳米尺度物理 · 物理学 2011-07-15 S. Nakaharai , J. R. Williams , C. M. Marcus

We investigate the quantum transport dynamics of electrons in a multi-path Aharonov-Bohm interferometer comprising several parallel graphene nanoribbons. At low magnetic field strengths, the conductance displays a complex oscillatory…

介观与纳米尺度物理 · 物理学 2023-09-13 Cynthia I. Osuala , Zitao Tang , Stefan Strauf , Eui-Hyeok Yang , Chunlei Qu

Electron transport in graphene is along the sheet but junction devices are often made by stacking different sheets together in a "side-contact" geometry which causes the current to flow perpendicular to the sheets within the device. Such…

计算物理 · 物理学 2015-04-08 Xiang-Guo Li , Iek-Heng Chu , X. -G. Zhang , Hai-Ping Cheng

In this paper we examine the effects of electron-hole asymmetry as a consequence of strong correlations on the electronic Raman scattering in the normal state of copper oxide high temperature superconductors. Using determinant quantum Monte…

Harnessing graphene devices for applications relies on a comprehensive understanding of how to interact with them. Specifically, scattering processes at the interface with metallic contacts can induce reproducible abnormalities in…

介观与纳米尺度物理 · 物理学 2024-08-21 Yuhao Zhao , Maëlle Kapfer , Kenji Watanabe , Takashi Taniguchi , Oded Zilberberg , Bjarke S. Jessen

Linear conductance of junctions formed by graphene flakes with order of nanometer-thick electrodes attached at the corners of the flakes is studied. The explored structures have sizes up to 20000 atoms and the conductance is studied as a…

介观与纳米尺度物理 · 物理学 2015-10-08 Martin Konôpka

Charge-neutral graphene in the quantum Hall regime is an example of a quantum Hall ferromagnet in a complex spin-valley space. This system exhibits a plethora of phases, with the particular spin-valley order parameters chosen by the system…

介观与纳米尺度物理 · 物理学 2025-05-21 Jincheng An , Ganpathy Murthy

Graphene field-effect transistors with Co contacts as source and drain electrodes show anomalous distorted transfer characteristics. The anomaly appears only in short-channel devices (shorter than approximately 3 micrometers) and originates…

材料科学 · 物理学 2008-10-20 Ryo Nouchi , Masashi Shiraishi , Yoshishige Suzuki

In this work, we present an investigation regarding how and why molecular hydrogen changes the electronic properties of graphene field effect transistors. We demonstrate that interaction with H2 leads to local doping of graphene near of the…

Coupling superconductors to quantum Hall edge states is the subject of intense investigation as part of the ongoing search for non-abelian excitations. Our group has previously observed supercurrents of hundreds of picoamperes in graphene…