相关论文: Voltage-controlled antiferromagnetism in magnetic …
The electric manipulation of antiferromagnets has become an area of great interest recently for zero-stray-field spintronic devices, and for their rich spin dynamics. Generally, the application of antiferromagnetic media for information…
We investigate electronic transport in epitaxial Fe(100)/MgO/Fe/MgO/Fe double magnetic tunnel junctions with soft barrier breakdown (hot spots). Specificity of these junctions are continious middle layer and Nitrogen doping of the MgO…
Low temperature (10K) high voltage bias dynamic conductivity (up to 2.7V) and shot noise (up to 1V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100) magnetic tunnel junctions, as a function of the magnetic state. The junctions show…
Electrically induced ionic motion offers a new way to realize voltage-controlled magnetism, opening the door to a new generation of logic, sensor, and data storage technologies. Here, we demonstrate an effective approach to…
We study the tunneling magneto thermopower and tunneling magneto thermocurrent of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ). The devices show a clear change of the thermoelectric properties upon reversal of the magnetisation of the…
We investigate the influence of the barrier thickness of Co$_{40}$Fe$_{40}$B$_{20}$ based magnetic tunnel junctions on the laser-induced tunnel magneto-Seebeck effect. Varying the barrier thickness from 1nm to 3nm, we find a distinct…
Magnetization reversal of soft ferromagnetic Fe layer, coupled to [Co/Pt]ML multilayer [ML] with perpendicular magnetic anisotropy (PMA), has been studied in-situ with an aim to understand the origin of exchange bias (EB) in orthogonal…
Towards next-generation spintronics devices, such as computer memories and logic chips, it is necessary to satisfy high thermal stability, low-power consumption and high spin-polarization simultaneously. Here, from first-principles, we…
Magnetoelectric coupling in ferromagnet/multiferroic systems is often manifested in the exchange bias effect, which may have combined contributions from multiple sources, such as domain walls, chemical defects or strain. In this study we…
The exchange bias effect is an essential component of magnetic memory and spintronic devices. Whereas recent research has shown that anisotropies perpendicular to the device plane provide superior stability against thermal noise, it has…
We report a room temperature tunneling anisotropic magnetoresistance in Co/Al2O3/NiFe junctions containing magnetic electrodes oxidized prior to forming the Al2O3 layer. A significant change in a tunnel magnetoresistance is observed when…
Electric-field controlled magnetization dynamics is an important integrant in low power spintronic devices. In this letter, we demonstrate electric-field induced parametric excitation for CoFeB/MgO junctions by using interfacial in-plane…
We report studies of exchange bias and coercivity in ferromagnetic Ni$_{81}$Fe$_{19}$ layers coupled to antiferromagnetic (AF) (0001), (11$\bar{2}$0), and (11$\bar{0}$2) $\alpha$-Fe$_2$O$_3$ layers. We show that AF spin configurations which…
The spin configuration in the ferromagnetic part during the magnetization reversal plays a crucial role in the exchange bias effect. Through Monte Carlo simulation, the exchange bias effect in ferromagnetic-antiferromagnetic core-shell…
Exchange bias phenomenon is generally ascribed to the exchange coupling at the interfaces between ferromagnetic and antiferromagnetic layers. Here, we propose a bulk form of exchange bias in a single-phase magnet where the coupling between…
Voltage control of magnetic anisotropy (VCMA) in magnetic heterostructures is a key technology for achieving energy-efficiency electronic devices with ultralow power consumption. Here, we report the first demonstration of the VCMA effect in…
Exchange bias-like effect observed in the intermetallic compound TbFeAl, which displays a magnetic phase transition at $T^h_c \approx$ 198~K and a second one at $T^l_c \approx$ 154~K, is reported. {\em Jump}-like features are observed in…
Interlayer exchange in synthetic antiferromagnets incorporating thin paramagnetic spacers can be controlled thermally. The spacer provides an additional ferromagnetic contribution that renormalizes the otherwise temperature-independent…
We report on the occurrence of exchange bias on laser-ablated granular thin films composed of Co nanoparticles embedded in amorphous zirconia matrix. The deposition method allows controlling the degree of oxidation of the Co particles by…
Electrical gate-manipulated exchange bias (EB) effect is a long-term goal for spintronics applications. Meanwhile, the emergence of van der Waals (vdW) magnetic heterostructures provides ideal platforms for the study of interlayer magnetic…