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相关论文: Maximizing spin-orbit torque efficiency of Ta(O)/P…

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We report that current-induced spin-orbit torques (SOTs) in heavy-metal/ferromagnetic-metal bilayers are strongly altered by the oxidation of the ferromagnetic layer near the interface. We measured damping-like (DL) and field-like (FL) SOTs…

材料科学 · 物理学 2020-07-15 Satoshi Haku , Musha Akira , Tenghua Gao , Kazuya Ando

We report measurements of spin pumping and the inverse spin Hall effect in Ni80Fe20/Uranium bilayers designed to study the efficiency of spin-charge interconversion in a super-heavy element. We employ broad-band ferromagnetic resonance on…

介观与纳米尺度物理 · 物理学 2016-01-20 Simranjeet Singh , Marta Anguera , Enrique del Barco , Ross Springell , Casey W. Miller

Despite the potential advantages of information storage in antiferromagnetically coupled materials, it remains unclear whether one can control the magnetic moment orientation efficiently because of the cancelled magnetic moment. Here, we…

材料科学 · 物理学 2016-10-31 Joseph Finley , Luqiao Liu

Investigation of the spin Hall effect in gold has triggered increasing interest over the past decade, since gold combines the properties of a large bulk spin diffusion length and strong interfacial spin-orbit coupling. However,…

Spin-orbit torques (SOTs) have opened a new path to switch the magnetization in perpendicularly magnetized films and are of great interest due to their potential applications in novel data storage technology, such as the magnetic random…

材料科学 · 物理学 2017-02-02 Pan He , Xuepeng Qiu , Vanessa L. Zhang , Yang Wu , Meng Hau Kuok , Hyunsoo Yang

It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the…

介观与纳米尺度物理 · 物理学 2020-04-16 Yan-Ting Liu , Tian-Yue Chen , Tzu-Hsiang Lo , Tsung-Yu Tsai , Shan-Yi Yang , Yao-Jen Chang , Jeng-Hua Wei , Chi-Feng Pai

The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based…

In past few decades, Rashba spin-orbit coupling (SOC) has been successfully employed for the emergence of exotic phenomena at the quantum oxide interfaces. In these systems, the combined effect of charge transfer, broken symmetries and SOC…

材料科学 · 物理学 2022-05-24 Megha Vagadia , Jaya Prakash Sahoo , Ankit Kumar , Suman Sardar , Tejas Tank , D. S. Rana

We measured the spin rectify effect and the inverse spin Hall effect in Nb-doped SrTiO$_3$ by injecting the spins from ferromagnetic thin films to SrTiO$_3$ using spin pumping. It was shown that the spin injection is increased when the…

介观与纳米尺度物理 · 物理学 2020-07-09 Wanli Zhang , Xiaoyu Zhang , Bin Peng , Wenxu Zhang

Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient…

We calculate the efficiency of infrared optical spin injection in single-layer graphene with Rashba spin-orbit coupling and for in-plane magnetic field. The injection rate in the photon frequency range corresponding to the Rashba splitting…

介观与纳米尺度物理 · 物理学 2015-06-19 M. Inglot , V. K. Dugaev , E. Ya. Sherman , J. Barnaś

Skyrmions can be driven by spin-orbit torques as a result of the spin Hall effect. Here we model an additional contribution in ultra-thin multilayers, arising from the spin accumulation at heavy metal / ferromagnetic interfaces and observe…

介观与纳米尺度物理 · 物理学 2021-01-04 C. R. MacKinnon , S. Lepadatu , T. Mercer , P. Bissell

In transition-metal dichalcogenides, electrons in the K-valleys can experience both Ising and Rashba spin-orbit couplings. In this work, we show that the coexistence of Ising and Rashba spin-orbit couplings leads to a special type of valley…

介观与纳米尺度物理 · 物理学 2019-03-04 Benjamin T. Zhou , Katsuhisa Taguchi , Yuki Kawaguchi , Yukio Tanaka , K. T. Law

Transition metal dichalcogenides (TMDs) are a novel class of quantum materials with significant potential in spintronics, optoelectronics, valleytronics, and opto-valleytronics. TMDs exhibit strong spin-orbit coupling, enabling efficient…

Efficient manipulation of magnetic materials is essential for spintronics. In spin-current generator/magnet bilayers, the efficiency of spin-orbit torques per magnetic layer thickness scales inversely with the magnetic layer thickness,…

材料科学 · 物理学 2022-12-20 Lijun Zhu , Jingwei Li , Lujun Zhu , Xinyue Xie

Current-induced torques in ultrathin Co/Pt bilayers were investigated using an electrically driven FMR technique. The angle dependence of the resonances, detected by a rectification effect as a voltage, were analysed to determine the…

介观与纳米尺度物理 · 物理学 2014-03-05 T. D. Skinner , M. Wang , A. T. Hindmarch , A. W. Rushforth , A. C. Irvine , D. Heiss , H. Kurebayashi , A. J. Ferguson

Oxide interfaces are a source of spin-orbit coupling which can lead to novel spin-to-charge conversion effects. In this work the contribution of the Bi$_2$O$_3$ interface to the anomalous Hall effect of Co is experimentally studied in…

介观与纳米尺度物理 · 物理学 2019-09-25 Edurne Sagasta , Juan Borge , Luis Esteban , Yasutomo Omori , Martin Gradhand , YoshiChika Otani , Luis E. Hueso , Fèlix Casanova

We report that due to the orbital Hall effect, orbital pumping effects can occur in materials with weak spin-orbit coupling. Moreover, there is a positive correlation between the strength of the orbital Hall effect and the size of…

应用物理 · 物理学 2025-11-20 Yuejie Zhang , Jinjun Ding , Tao Liu , Xiaofei Yang , Taoyuan Ouyang , Shi Chen , Yongqing Peng

We report the measurement of efficient charge-to-spin conversion at room temperature in Weyl semimetal/ferromagnet heterostructures with both oxidized and pristine interfaces. Polycrystalline films of the Weyl semimetal, TaAs, are grown by…

An electric current flowing in Pt, a material with strong spin-orbit coupling, leads to spins accumulating at the interfaces by virtue of the spin Hall effect and interfacial charge-spin conversion. We measure the influence of these…