相关论文: Adatom-induced dislocation annihilation in epitaxi…

Dislocation is a very important one-dimensional defect in ferroelectrics. This work introduces an easy and flexible model of implementing the edge dislocation by introducing eigenstrain at the interface, and it could be easily extended to…

Strain solitons are quasi-dislocations that form in van der Waals materials to relieve the energy associated with lattice or rotational mismatch in the crystal. Novel and unusual electronic properties of strain solitons have been both…

Dislocation motion--the atomic-scale mechanism of crystal plasticity--governs the strength and ductility of materials. In functional materials, external stimuli beyond mechanical stress can also affect dislocation glide. In the wide band…

Plastic deformation of crystals is a physical phenomenon, which has immensely driven the development of human civilisation since the onset of the Chalcolithic period. This process is primarily governed by the motion of line defects, called…

An extended elastic eigenvector approach for adatom interactions is applied to elastically isotropic substrates. The oscillating interactions between adatom monomers or dimers are caused by strain fields in the substrate. Expansive or…

Recent theoretical work has predicted that dislocation patterning induces anisotropic flat bands in the electronic band diagram, which can lead to unusual effects such as unconventional superconductivity. This work develops a…

Graphene monolayers are known to display domains of anisotropic friction with twofold symmetry and anisotropy exceeding 200 percent. This anisotropy has been thought to originate from periodic nanoscale ripples in the graphene sheet, which…

Dislocations in crystalline materials are widely exploited to tailor the thermal conductivity of semiconductors and thermoelectrics, yet a critical gap persists: direct measurement of local thermal resistance at individual buried…

Silicene is one of the most promising 2D materials for the realization of next-generation electronic devices, owing to its high carrier mobility and bandgap tunability through the imposition of an external electric field. To exploit this…

The adsorption characteristics of alkali, alkaline earth and transition metal adatoms on silicene, a graphene-like monolayer structure of silicon, are analyzed by means of first-principles calculations. In contrast to graphene, interaction…

Whereas disclination defects are energetically prohibitive in two-dimensional flat crystals, their existence is necessary in crystals with spherical topology, such as viral capsids, colloidosomes or fullerenes. Such a geometrical…

In this study, we present the first simulation results of the formation of dislocation cell wall microstructures in tantalum subjected to shock loading. Dislocation patterns and cell wall formation are important to understanding the…

We provide a minimal continuum model for mesoscale plasticity, explaining the cellular dislocation structures observed in deformed crystals. Our dislocation density tensor evolves from random, smooth initial conditions to form self-similar…

Two-dimensional simulations of the coarsening process of the isotropic/smectic-A phase transition are presented using a high-order Landau-de Gennes type free energy model. Defect annihilation laws for smectic disclinations, elementary…

By combining experimental techniques with ab-initio density functional theory calculations, we describe the Si/Ag(111) two-dimensional system in terms of a sp2-sp3 crystalline form of silicon characterized by a vertically distorted…

Atomic level defects such as dislocations play key roles in determining the macroscopic properties of crystalline materials. Their effects are important and wide-reaching, and range from increased chemical reactivity to enhanced mechanical…

Crystalline materials, such as metals and semiconductors, nearly always contain a special defect type called dislocation. This defect decisively determines many important material properties, e.g., strength, fracture toughness, or…

Large-scale atomistic calculations, using empirical potentials for modeling semiconductors, have been performed on a stressed system with linear surface defects like steps. Although the elastic limits of systems with surface defects remain…

We present a detailed real-space spin-polarized scanning tunneling microscopy (SP-STM) study of the magnetic domain structure of Gd(0001) films epitaxially grown on W(110). To find optimal preparation conditions, the influence of the…

Silicene is a monolayer of silicon atoms forming a two-dimensional honeycomb lattice. We investigate the topological properties of a silicene superstructure generated by an external periodic potential. The superstructure is a quantum…