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Dispersion corrected density functional theory ($\omega$B97X-D DFT) method is used to study the molecular hydrogen adsorption in $Ni_nMg_m$ $(1\geq n\geq 3,1\geq m\geq9)$ clusters. All these clusters can effectively adsorb multiple $H_2$ in…

材料科学 · 物理学 2022-02-28 Bishwajit Boruah , Bulumoni Kalita

The adsorption of PBr3 on the Si(100)-2$\times$1 surface was studied by scanning tunneling microscopy (STM) and density functional theory (DFT). The PBr3 molecule completely dissociates on the Si(100) surface at room temperature into P and…

材料科学 · 物理学 2025-10-24 Vladimir M. Shevlyuga , Yulia A. Vorontsova , Tatiana V. Pavlova

As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of SiGe heterostructures. To preserve the substrate structure…

A theoretical investigation of the microscopic mechanisms provided the transient enhanced diffusion of boron atoms during rapid thermal annealing of silicon substrates doped by high fluence ion implantation was carried out. To compare the…

介观与纳米尺度物理 · 物理学 2010-07-23 O. I. Velichko , A. A. Hundoryna

Tight binding molecular dynamics simulations, with a non orthogonal basis set, are performed to study the fragmentation of carbon fullerenes doped with up to six silicon atoms. Both substitutional and adsorbed cases are considered. The…

材料科学 · 物理学 2009-11-07 Chu-Chun Fu , Javier Fava , Ruben Weht , M. Weissmann

Boron subphthalocyanine chloride is an electron donor material used in small molecule organic photovoltaics with an unusually large molecular dipole moment. Using first-principles calculations, we investigate enhancing the electronic and…

材料科学 · 物理学 2017-05-08 Michael J. Waters , Daniel Hashemi , Guangsha Shi , Emmanouil Kioupakis , John Kieffer

Accurate prediction of shallow-donor electron binding energies is critical for device modeling, dopant activation, and donor-based quantum technologies. Traditional beyond-DFT approaches (e.g., hybrid functionals, GW) are prohibitively…

材料科学 · 物理学 2025-10-30 Joshua Claes , Bart Partoens , Dirk Lamoen , Marcelo Marques , Lara K. Teles

Density functional theory $(DFT)$ studies show that doping of $3d TM$ atoms into $Mg_4^{0,+} (TMMg_3^{0,+})$ can alter the endothermic nature of molecular hydrogen adsorption on bare $Mg_4^{0,+}$. $H_2$ adsorption on $TMMg_3^{0,+}$ clusters…

材料科学 · 物理学 2021-12-21 Bishwajit Boruah , Bulumoni Kalita

We present the findings of the superconductivity in the silicon nanostructures prepared by short time diffusion of boron after preliminary oxidation of the n-type Si (100) surface. These Si-based nanostructures represent the p-type high…

超导电性 · 物理学 2015-05-13 N. T. Bagraev , W. Gehlhoff , L. E. Klyachkin , A. M. Malyarenko , V. V. Romanov

Ab-initio calculations based on density functional theory (DFT) have been performed to study the optical properties of pure graphene and have been compared to that of individual boron (B), nitrogen (N) and BN co-doped graphene sheet. The…

介观与纳米尺度物理 · 物理学 2020-05-22 Pooja Rani , Girija S Dubey , V. K. Jindal

Two-dimensional transition metal dichalcogenides (TMDCs) have been extensively investigated due to their tunable properties. In this work, density functional theory (DFT) is employed to investigate the adsorption behavior and sensing…

材料科学 · 物理学 2026-01-22 Neeraj Thakur , Anjna Bhardwaj , Arun Kumar , Amarjeet Singh

A two stream model of boron diffusion in silicon has been developed. The model is intended for simulation of transient enhanced diffusion including redistribution of ion-implanted boron during low temperature annealing. The following…

材料科学 · 物理学 2011-05-24 O. I. Velichko , A. A. Hundorina

Graphene is thought to be a promising materials for many applications. However, pristine graphene is not suitable for most electrochemical devices, where defect engineering is crucial for its performance. We demonstrate how boron doping of…

材料科学 · 物理学 2023-07-07 Milica S. Ritopečki , Natalia V. Skorodumova , Ana S. Dobrota , Igor A. Pašti

The doping of lighter non-metals like boron and nitrogen into graphene represents a promising advancement in the field of nano-electronic devices, particularly in the development of field-effect transistors (FETs). These doped…

材料科学 · 物理学 2023-08-16 Vivek Kumar Yadav

The large bandgap and strong covalent bonds of hexagonal boron nitride (hBN) had long been thought to be chemically inert. Due to its inertness with saturated robust covalent bonds, the pristine 2D monolayer hBN cannot be functionalized for…

材料科学 · 物理学 2024-04-22 Lokesh Yadav , Srimanta Pakhira

Intermetallic compounds such as {A$_{2}$B$_{7}$} alloys are promising candidates for mobile hydrogen storage applications due to their high and reversible hydrogen absorption capacity. We compute the absorption isotherm of…

The amorphous conducting carbon films have been prepared at three different preparation temperatures with different boron-doping levels. The structural and transport properties of the same have been studied. X-ray diffraction measurements…

无序系统与神经网络 · 物理学 2007-05-23 P. N. Vishwakarma , S. V. Subramanyam

A review of electronic properties of insulating-, boron- and phosphorus-doped diamond is given. The main goal is, to show data in a wider context, to reveal trends and limitations with respect to carrier mobilities, conductivities, p- and…

材料科学 · 物理学 2020-05-11 Christoph E. Nebel

The design of catalysts with desired chemical and thermal properties is viewed as a grand challenge for scientists and engineers. For operation at high temperatures, stability against structural transformations is a key requirement.…

Though weak surface interactions and adsorption can play an important role in plasma processing and materials science, they are not necessarily simple to model. A boron adatom adsorbed on a graphene sheet serves as a case study for how…

计算物理 · 物理学 2024-01-08 S. Jubin , A. Rau , Y. Barsukov , S. Ethier , I. D. Kaganovich