相关论文: Spin transfer torque in Mn$_3$Ga-based ferrimagnet…

The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating…

The relative contributions of in-plane (damping-like) and out-of-plane (field-like) spin-transfer-torques in the magnetization switching of out-of-plane magnetized magnetic tunnel junctions (pMTJ) has been theoretically analyzed using the…

The quantum mechanical tunnelling process conserves the quantum properties of the particle considered. As applied to solid-state tunnelling (SST), this physical law was verified, within the field of spintronics, regarding the electron spin…

Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates as building block of Spin Transfer Torque (STT) magnetoresistive memories. However, up to now, the only STT is not enough to achieve switching current density below…

Theoretical investigations of spin transfer torque in magnetic tunnel junctions using the tight-binding model in the framework of non-equilibrium Green functions formalism are presented. We show that the behavior of the spin transfer torque…

In this paper, the spin transfer torque (STT) and the exchange coupling of the Josephson junctions containing interesting cases of diffusive/ballistic-triplet/singlet ferromagnetic superconductor materials together with diffusive Josephson…

The antiferromagnets with the time-reversal symmetry broken magnetic structures possess a finite spin splitting in the momentum space, and may contribute to a realization of a finite tunnel magnetoresistance (TMR) effect even with magnets…

We investigate the suitability of nearly half-metallic ferrimagnetic quaternary Heusler alloys, CoCrMnZ (Z=Al, Ga, Si, Ge) to assess the feasibility as electrode materials of MgO-based magnetic tunnel junctions (MTJ). Low magnetic moments…

We report the theoretical investigation of noise spectrum of spin current and spin transfer torque for non-colinear spin polarized transport in a spin-valve device which consists of normal scattering region connected by two ferromagnetic…

Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy…

The recent experiment [Y. Wang et al., Science 366, 1125 (2019)] on magnon-mediated spin-transfer torque (MSTT) was interpreted in terms of a picture where magnons are excited within an antiferromagnetic insulator (AFI), by applying…

Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT) and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biased spin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions for each…

Current-induced spin-transfer torques (STTs) have been studied in Fe, Co and Ni domain walls (DWs) by the method based on the first-principles noncollinear calculations of scattering wave functions expanded in the tight-binding linearized…

We propose a new class of non-uniform superlattice magnetic tunnel junctions (Nu-SLTJs) with the Linear, Gaussian, Lorentzian, and P\"oschl-teller width and height based profiles manifesting a sizable enhancement in the TMR($\approx…

We present a study of the spin transfer torque oscillator based on CoFeB/MgO/CoFeB asymmetric magnetic tunnel junctions. We observe microwave precession in junctions with different thickness of the free magnetization layer. Taking advantage…

Antiferromagnetic materials are outstanding candidates for next generation spintronic applications, because their ultrafast spin dynamics makes it possible to realize several orders of magnitude higher-speed devices than conventional…

Magnetic tunnel junctions (MTJs) based on ferromagnets are canonical devices in spintronics, with wide-ranging applications in data storage, computing, and sensing. They simultaneously exhibit mechanisms for electrical detection of magnetic…

We propose spin transfer torque--magnetoresistive random access memory (STT-MRAM) based on magneto-resistance and spin transfer torque physics of band-pass spin filtering. Utilizing the electronic analogs of optical phenomena such as…

We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a…

We theoretically study spin-transfer torque (STT) in a graphene system with spin-orbit coupling (SOC). We consider a graphene-based junction where the spin-orbit coupled region is sandwiched between two ferromagnetic (F) segments. The…