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This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H$_2$) and monolayer MoS$_2$ field effect transistors (MoS$_2$ FET), aiming for sensing application. The MoS$_2$ FET exhibits a response…

The development of room-temperature sensing devices for detecting small concentrations of molecular species is imperative for a wide range of low-power sensor applications. We demonstrate a room-temperature, highly sensitive, selective, and…

We have investigated the impact of toxic N2O gas upon structural and electronic properties of 2D MoSe2 monolayer using DFT approach. In this work, as a result of N2O gas absorption, charge transfer, band gap and density of states (DOS) are…

材料科学 · 物理学 2020-08-18 N. Mishra , Bramha P. Pandey

Two-dimensional transition metal dichalcogenides (TMDs) are highly appealing for gas sensors, lab-on-a-chip devices and bio-sensing applications because of their strong light-matter interaction and high surface-to-volume ratio. The ability…

Gas sensors based on transition metal dichalcogenides (TMDCs) have attracted much attention from a new perspective involving light-assisted or gate-voltage operation. However, their combined roles as regards the gas sensing performance and…

The measurement of acetone in human breath, a known biomarker for diabetes, can act as an effective screening method for diabetes. While gas chromatography and mass spectroscopy based methods can detect gases in low concentration, they are…

应用物理 · 物理学 2019-06-26 Sumant Sarkar , Alison Viegas , Srinivasa R. Raghavan

Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2…

Ambient humidity poses a significant challenge in the development of practical room temperature NO$_2$ gas sensors. Here, we employ atomically precise zigzag edges in multilayer MoS$_2$, fabricated using electron beam lithography and…

Two dimensional material/semiconductor heterostructures offer alternative platforms for optoelectronic devices other than conventional Schottky and p-n junction devices. Herein, we use MoS2/GaAs heterojunction as a self-driven photodetector…

仪器与探测器 · 物理学 2021-03-02 Zhijuan Xu , Shisheng Lin , Xiaoqiang Li , Shengjiao Zhang , Zhiqian Wu , Wenli Xu , Yanghua Lu , Sen Xu

Niobium disulfide (NbS2), a two-dimensional transition metal dichalcogenide with semi metallic conductivity and high surface activity, offers promising properties for electronic and sensing applications. In this study, we report a…

材料科学 · 物理学 2025-07-17 P K Shihabudeen , Alex Sam , Shih-Wen Chiu , Ta-Jen Yen , Kea-Tiong Tang

Two dimensional materials such as Transition Metal Dichalcogenides (TMDC) and their bi-layer/tri-layer heterostructures have become the focus of intense research and investigation in recent years due to their promising applications in…

计算物理 · 物理学 2018-02-27 Kanak Datta , Abir Shadman , Ehsanur Rahman , Quazi D. M. Khosru

Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered…

介观与纳米尺度物理 · 物理学 2013-06-25 Branimir Radisavljevic , Andras Kis

Excellent gate electrostatics in field effect transistors (FETs) based on two-dimensional transition metal dichalcogenide (2D TMD) channels can dramatically decrease static power dissipation. Energy efficient FETs operate in enhancement…

The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these…

Over the past few years, there has been a growing interest in layered transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2). Most studies so far have focused on the electronic and optoelectronic properties of…

介观与纳米尺度物理 · 物理学 2016-10-03 Morteza Kayyalha , Jesse Maassen , Mark Lundstrom , Li Shi , Yong P. Chen

Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…

介观与纳米尺度物理 · 物理学 2015-06-12 Michael S. Fuhrer , James Hone

We report a new approach to integrating high-\k{appa} dielectrics in both bottom- and top-gated MoS2 field-effect transistors (FETs) through thermal oxidation and mechanical assembly of layered twodimensional (2D) TaS2. Combined X-ray…

The development of high-performing sensing materials, able to detect ppb-trace concentrations of volatile organic compounds at low temperatures, is required for the development of next-generation miniaturized wireless sensors. Here, we…

P-n junctions based on vertically stacked single or few layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDCs to show exclusively one type of conductivity, n- or…

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present…

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