相关论文: Current-induced magnetization switching in CoTb am…
Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…
Current-induced magnetization switching, a fundamental phenomenon related to spin-transport of electrons, enables non-voltaic and fast information write, facilitating applications in low-power memory and logic devices. However,…
Current-induced domain wall (DW) motion has drawn great attention in the last decades as the key operational principle of emerging magnetic memory devices. As the major driving force of the current-induced DW motion, the spin-orbit torque…
Unravelling the mechanism behind bulk perpendicular magnetic anisotropy (PMA) in amorphous rare earth-transition metal films has proven challenging. This is largely due to the inherent complexity of amorphous structure and the entangled…
Spintronics-based nonvolatile components in neuromorphic circuits offer the possibility of realizing novel functionalities at low power. Current-controlled electrical switching of magnetization is actively researched in this context.…
Spin-orbit torques (SOTs) have been widely understood as an interfacial transfer of spin that is independent of the bulk properties of the magnetic layer. Here, we report that SOTs acting on ferrimagnetic FexTb1-x layers decrease and vanish…
Magnetic insulators (MIs) attract tremendous interest for spintronic applications due to low Gilbert damping and absence of Ohmic loss. Magnetic order of MIs can be manipulated and even switched by spin-orbit torques (SOTs) generated…
Future applications of spin-orbit torque will require new mechanisms to improve the efficiency for switching nanoscale magnetic tunnel junctions (MTJs), while also controlling the magnetic dynamics to achieve fast, nanosecond scale…
Despite their great promise for providing a pathway for very efficient and fast manipulation of magnetization at the nanoscale, spin-orbit torque (SOT) operations are currently energy inefficient due to a low damping-like SOT efficiency per…
Perpendicular magnetic anisotropy (PMA) and dynamic magnetization reversal process in [CoFeB $t$ nm/Pd 1.0 nm]$_n$ ($t$ = 0.4, 0.6, 0.8, 1.0, and 1.2 nm; $n$ = 2 - 20) multilayer films have been studied by means of magnetic hysteresis and…
So far, studies of spin-orbit torques (SOT) in ferromagnets with perpendicular magnetic anisotropy (PMA) have been restricted to ultra thin samples, while a systematic study of its thickness dependence is still lacking in literature. In…
Current-induced spin torques are of great interest to manipulate the orientation of nanomagnets without applying external magnetic fields. They find direct application in non-volatile data storage and logic devices, and provide insight into…
Ultra-fast magnetization switching triggered by a single femtosecond laser pulse has gained significant attention over the last decade for its potential in low-power consumption, high-speed memory applications. However, this phenomenon has…
Oxidation strongly influences the properties of magnetic layers employed in spintronic devices. We study the effect of oxidation on the structural, magnetic, and electrical properties as well as current-induced spin-orbit torques (SOTs) in…
Currents induce magnetization torques via spin-transfer when the spin angular momentum is conserved or via relativistic spin-orbit coupling. Beyond simple models, the relationship between material properties and spin-orbit torques is not…
We present a new type of temperature driven spin reorientation transition (SRT) in thin films. It can occur when the lattice and the shape anisotropy favor different easy directions of the magnetization. Due to different temperature…
Realizing deterministic current-induced spin-orbit torque (SOT) magnetization switching, especially in systems exhibiting perpendicular magnetic anisotropy (PMA), typically requires the application of a collinear in-plane field, posing a…
The competition between shape and perpendicular magnetic anisotropies (PMA) in magnetic thin films gives rise to unusual magnetic behaviors. In ferromagnetic films with moderate PMA the magnetic domain configuration transitions from planar…
Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a…
Current-induced spin-orbit torque (SOT) has emerged as a promising method for achieving energy-efficient magnetization switching in advanced spintronic devices. However, technological advancement has been inadequate because an external…