相关论文: Ultrafast antiferromagnetic switching in NiO induc…
NiO is a good candidate for ultrafast magnetic switching because of its large spin density, antiferromagnetic order, and clearly separated intragap states. In order to detect and monitor the switching dynamics, we develop a systematic…
Insulating antiferromagnets are efficient and robust conductors of spin current. To realise the full potential of these materials within spintronics, the outstanding challenges are to demonstrate scalability down to nanometric lengthscales…
For a long time, there have been no efficient ways of controlling antiferromagnets. Quite a strong magnetic field was required to manipulate the magnetic moments because of a high molecular field and a small magnetic susceptibility. It was…
The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antiferromagnetic oxide NiO which has complex anisotropy. We show…
We predict ultrafast switching in a chiral anti-ferromagnet that occurs at femtosecond times, nearly 5 orders of magnitude faster than the torque induced nanosecond switching previously observed. The physical mechanism, quite different from…
Efficient and fast manipulation of antiferromagnets has to date remained a challenging task, hindering their application in spintronic devices. For ultrafast operation of such devices, it is highly desirable to be able to control the…
In spin transport experiments with spin currents propagating through antiferromagnetic (AFM) material, the antiferromagnet is treated as a mainly passive spin conductor not generating nor adding any spin current to the system. The spin…
Picosecond switching of the staggered antiferromagnetic order is shown to be realizable through spin-transfer torques from a short current pulse. The coupled dynamics of sublattice magnetization is mapped onto a classical pendulum subject…
We prepare the high quality epitaxial MgO(001)[100]/Pt(001)[100]/NiO(001)[100]/FeNi/SiO2 films to investigate the spin transport in the NiO antiferromagnetic insulator. The ferromagnetic resonance measurements of the FeNi under a spin…
As electrical control of N\'eel order opens the door to reliable antiferromagnetic spintronic devices, understanding the microscopic mechanisms of antiferromagnetic switching is crucial. Spatially-resolved studies are necessary to…
Recent demonstrations of the electrical switching of antiferromagnets (AFs) have given an enormous impulse to the field of AF spintronics. Many of these observations are plagued by non-magnetic effects that are very difficult to distinguish…
Ultrafast electric manipulation of magnetic order in solids is critical for the development of future terahertz data processing. A fascinating concept for such high-speed operation is offered in metallic antiferromagnets by N\'eel…
As a candidate material for applications such as magnetic memory, polycrystalline antiferromagnets offer the same robustness to external magnetic fields, THz spin dynamics, and lack of stray field as their single crystalline counterparts,…
Spin pumping converting sub-terahertz electromagnetic waves to DC spin currents has recently been demonstrated in antiferromagnets (AFMs) with easy-axis magnetic anisotropy. However, easy-plane AFMs such as NiO, which are easier to prepare…
Antiferromagnets are promising candidates for ultrafast spintronic applications, leveraging current-induced spin-orbit torques. However, experimentally distinguishing between different switching mechanisms of the staggered magnetization…
We observe highly efficient dynamic spin injection from Y$_3$Fe$_5$O$_{12}$ (YIG) into NiO, an antiferromagnetic (AF) insulator, via strong coupling, and robust spin propagation in NiO up to 100-nm thickness mediated by its AF spin…
Antiferromagnetic (AFM) materials possess a well-recognized potential for ultrafast data processing thanks to their intrinsic ultrafast spin dynamics, absence of stray fields, and large spin transport effects. The very same properties,…
Antiferromagnets are magnetically ordered materials which exhibit no net moment and thus are insensitive to magnetic fields. Antiferromagnetic spintronics aims to take advantage of this insensitivity for enhanced stability, while at the…
Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching…
The efficient transport of spin angular momentum is expected to play a crucial role in future spintronic devices, which potentially operate at frequencies reaching the terahertz range. Antiferromagnetic insulators exhibit significant…