相关论文: Multi-step stochastic mechanism of polarization re…
A stochastic model of electric field-driven polarization reversal in orthorhombic ferroelectrics is advanced, providing a description of their temporal electromechanical response. The theory accounts for all possible parallel and sequential…
A stochastic model for polarization switching in tetragonal ferroelectric ceramics is introduced, which includes sequential 90{\deg}- and parallel 180{\deg}-switching processes and accounts for the dispersion of characteristic switching…
Consecutive stochastic 90{\deg} polarization switching events, clearly resolved in recent experiments, are described by a new nucleation and growth multi-step model. It extends the classical Kolmogorov-Avrami-Ishibashi approach and includes…
A conceptual problem of the electric-field mediated polarization correlations during a stochastic formation of polarization domain structure in ferroelectrics is addressed by using an exactly solvable stochastic model of polarization…
The stochastic analysis of the polarization domain structures, emerging after quenching from a paraelectric to a ferroelectric state, in terms of the polarization correlation functions and their Fourier transforms is a fast and effective…
A self-consistent stochastic model of domain structure formation in a uniaxial ferroelectric, quenched from a high-temperature paraelectric phase to a low-temperature ferroelectric phase, is developed with an account of the applied electric…
Ferroelectrics are widely used for a broad array of technological applications due to their attractive electrical and electromechanical properties. In order to obtain large functional properties, material compositions are often designed to…
Light-induced sliding ferroelectricity in two-dimensional van der Waals materials enables polarization control via relative layer motion. However, polarization switching occurs on the time scale of shear modes (tens of ps) and requires very…
We have proposed the phenomenological description of polarization switching peculiarities in ferroelectric semiconductors with charged defects and prevailing extrinsic conductivity. Exactly we have modified Landau-Ginsburg approach shown…
Based on the two-step-switching model, the process of electromechanical poling of a ferroelectric ceramics is simulated. A difference of the remnant polarizations between two poling protocols (mechanical stress is applied before and after…
The role of the surface during polarization switching in constrained ferroelectrics is investigated using the time-dependent Ginzburg-Landau theory. The model incorporates the elastic and electrostrictive effects in the form of a long-range…
Ferroelectrics are multifunctional smart materials finding applications in sensor technology, micromechanical actuation, digital information storage etc. Their most fundamental property is the ability of polarization switching under applied…
Statistical distribution of switching times is a key information necessary to describe the dynamic response of a polycrystalline bulk ferroelectric to an applied electric field. The Inhomogeneous Field Mechanism (IFM) model offers a useful…
An analytical model is developed to predict the temporal evolution of the lattice polarization in ferroelectric nanomembranes upon the excitation by a terahertz (THz) electromagnetic pulse of an arbitrary waveform, and the concurrent…
We study theoretically the multiferroic dynamics in a composite one-dimensional system consisting of BaTiO3 multiferroically coupled to an iron chain. The method treats the magnetization and the polarization as thermodynamic quantities…
We propose a hysteretic model for electromechanical coupling in piezoelectric materials, with the strain and the electric field as inputs and the stress and the polarization as outputs. This constitutive law satisfies the thermodynamic…
With the advent of increasingly elaborate experimental techniques in physics, chemistry and materials sciences, measured data are becoming bigger and more complex. The observables are typically a function of several stimuli resulting in…
Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However,…
Surprisingly little is known about the microscopic processes that govern ferroelectric switching in orthorhombic ferroelectrics. To study microscopic switching processes we combine ab initio-based molecular dynamics simulations and data…
A comparative theoretical study is presented for the rhombohedral R3 and R3m phase HfO2, of two possible forms in its heavily Zr-doped ferroelectric thin films found recently in experiments. Their structural stability and polarization under…