相关论文: Doubly-charged silicon vacancy center, photochromi…
Optically addressable solid-state defects are emerging as one of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate…
We propose a method to achieve coherent coupling between Nitrogen-vacancy (NV) centers in diamond and superconducting (SC) flux qubits. The resulting coupling can be used to create a coherent interaction between the spin states of distant…
We present ab-initio calculations of photoionization thresholds and cross sections of the negatively charged nitrogen-vacancy (NV) center in diamond from the ground $^{3}\!A_2$ and the excited $^{3}\!E$ states. We show that after the…
Strong light-matter interactions are critical for quantum technologies based on light, such as memories or nonlinear interactions. Solid state materials will be particularly important for such applications, because of the relative ease of…
We show that electric field noise from surface charge fluctuations can be a significant source of spin decoherence for near-surface nitrogen-vacancy (NV) centers in diamond. This conclusion is based on the increase in spin coherence…
In this report, the polarization properties of the photoluminescence emitted by single nitrogen-vacancy (NV) color centers in diamond are investigated using resonant excitation at cryogenic temperature. We first underline that the two…
We studied the spin depolarization of ensembles of nitrogen-vacancy (NV) centers in nitrogen-rich single crystal diamonds. We found a strong dependence of the evolution of the polarized state in the dark on the concentration of NV centers.…
The nitrogen-vacancy (NV) color center in diamond has demonstrated great promise in a wide range of quantum sensing. Recently, there have been a series of proposals and experiments using NV centers to detect spin noise of quantum materials…
Atomic defect centers in diamond have been widely exploited in numerous quantum applications like quantum information, sensing, quantum photonics and so on. In this context, there is always a requirement to improve and optimize the…
Negatively charged silicon vacancy centers (SiV$^-$) in diamond exhibit excellent spin coherence and optical properties, making them promising candidates for quantum technologies. However, the strain-induced inhomogeneous distribution of…
We report on the observation of quantum interference of the emission from two separate nitrogen vacancy (NV) centers in diamond. Taking advantage of optically induced spin polarization in combination with polarization filtering, we isolate…
Silicon-vacancy (SiV) center in diamond is a photoluminescence (PL) center with a characteristic zero-phonon line energy at 1.681 eV that acts as a solid-state single photon source and, potentially, as a quantum bit. The majority of the…
We demonstrate quantum interference between indistinguishable photons emitted by two nitrogen-vacancy (NV) centers in distinct diamond samples separated by two meters. Macroscopic solid immersion lenses are used to enhance photon collection…
We investigated the effect of fluorine-terminated diamond surface on the charged state of shallow nitrogen vacancy defect centers (NVs). Fluorination is achieved with CF4 plasma and the surface chemistry is confirmed with x-ray…
We report on a mathematical model of the photoelectric response of NV colour centres in diamond, that can be employed for sensing and quantum science information applications. Although the model applies to NV centre in diamond, it can be…
The nitrogen vacancy (NV) center in diamond has emerged as a leading solid-state quantum sensor for applications including magnetometry, electrometry, thermometry, and chemical sensing. However, an outstanding challenge for practical…
The photoluminescence of nitrogen-vacancy (NV) centers in diamond nanoparticles exhibits specific properties as compared to NV centers in bulk diamond. For instance large fluctuations of lifetime and brightness from particle to particle…
The efficiency of collecting photons from optically active defect centres in bulk diamond is greatly reduced by refraction and reflection at the diamond-air interface. We report on the fabrication and measurement of a geometrical solution…
We report a versatile method to engineer arrays of nitrogen-vacancy (NV) color centers in dia- mond at the nanoscale. The defects were produced in parallel by ion implantation through 80 nm diameter apertures patterned using electron beam…
We employ the technique of optical detection of magnetic resonance to study dipolar interaction in diamond between nitrogen-vacancy color centers of different crystallographic orientations and substitutional nitrogen defects. We demonstrate…