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Low-energy electronic behavior in graphite crystals is highly dependent on the relative stacking arrangement of the constituent layers. Topologically non-trivial electronic states can arise due to interrupted rhombohedral (ABC) stacking,…

介观与纳米尺度物理 · 物理学 2026-04-14 Luke Soneji , Simon Crampin , Marcin Mucha-Kruczynski

We systematically investigate the emergence of electron crystal phases in rhombohedral multilayer graphene using comprehensive self-consistent Hartree Fock calculations combined with \textit{ab initio} tight binding model. As the carrier…

介观与纳米尺度物理 · 物理学 2026-04-27 Wangqian Miao , Chu Li

The recent discovery of superconductivity and magnetism in trilayer rhombohedral graphene (RG) establishes an ideal, untwisted platform to study strong correlation electronic phenomena. However, the correlated effects in multilayer RG have…

In crystalline solids the interactions of charge and spin can result in a variety of emergent quantum ground states, especially in partially filled, topological flat bands such as Landau levels or in 'magic-angle' bilayer graphene. Much…

Electronic band structures in hydrogenated graphene are theoretically investigated by means of first-principle calculations and an effective tight-binding model. It is shown that regularly designed hydrogenation to graphene gives rise to a…

介观与纳米尺度物理 · 物理学 2024-08-05 Yong-Cheng Jiang , Toshikaze Kariyado , Xiao Hu

Rhombohedral graphite (RG) shows strong correlations in its topological flat band and is pivotal for exploring emergent, correlated electronic phenomena. One key advantage is the enhancement of electronic interactions with the increase in…

There has been a lot of excitement around the observation of superconductivity in twisted bilayer graphene, associated to flat bands close to the Fermi level. Such correlated electronic states also occur in multilayer rhombohedral stacked…

材料科学 · 物理学 2021-02-26 Jean Paul Nery , Matteo Calandra , Francesco Mauri

Rhombohedral graphene (RG) has emerged as a promising platform for exploring exotic quantum phenomena, such as quantum magnetism, unconventional superconductivity, and fractional quantum anomalous Hall effects. Despite its potential,…

Graphene and its van der Waals (vdW) heterostructures provide a unique and versatile playground for explorations of strongly correlated electronic phases, ranging from unconventional fractional quantum Hall (FQH) states in a monolayer…

介观与纳米尺度物理 · 物理学 2023-03-17 A. Popert , Y. Shimazaki , M. Kroner , K. Watanabe , T. Taniguchi , A. Imamoğlu , T. Smoleński

Rhombohedral multilayer graphene has emerged as an extraordinary platform for investigating exotic quantum states, such as superconductivity and fractional quantum anomalous Hall effects, mainly due to the existence of topological surface…

介观与纳米尺度物理 · 物理学 2025-03-18 H. B. Xiao , C. Chen , X. Sui , S. H. Zhang , M. Z. Sun , H. Gao , Q. Jiang , Q. Li , L. X. Yang , M. Ye , F. Y. Zhu , M. X. Wang , J. P. Liu , Z. B. Zhang , Z. J. Wang , Y. L. Chen , K. H. Liu , Z. K. Liu

We apply the mean-field Hartree Fock theory of gapped electronic states at charge neutrality in bilayer graphene to thin films of rhombohedral graphite with up to thirty layers. For the ground state, the order parameter (the separation of…

介观与纳米尺度物理 · 物理学 2021-07-07 James H. Muten , Alex J. Copeland , Edward McCann

Transport measurements indicate strong oscillations in the Hall-,$R_{xy}$, and the diagonal-, $R_{xx}$, resistances and exhibit Hall plateaus at the lowest temperatures, in three-dimensional Highly Oriented Pyrolytic Graphite (HOPG). At the…

介观与纳米尺度物理 · 物理学 2015-03-17 Aruna N. Ramanayaka , R. G. Mani

Manipulating the topological properties of quantum states can provide a way to protect them against disorder. However, typically, changing the topology of electronic states in a crystalline material is challenging because their nature is…

介观与纳米尺度物理 · 物理学 2026-04-14 Luke Soneji , Simon Crampin , Marcin Mucha-Kruczynski

The grain boundaries (GBs) of a graphene surface were extensively studied because GBs with specific defect configurations result in the formation of new curved structures, which can be treated as new carbon allotropes. We studied the…

材料科学 · 物理学 2018-01-17 Jun Ma , Xiaying Li , Longjing Yin , Wenxiao Wang , Qi Sun , Yu Yang , Ping Zhang , Jiacai Nie , Changmin Xiong , Ruifen Dou

Various electronic phases emerge when applying high magnetic fields in graphite. However, the origin of a semimetal-insulator transition at $B \simeq 30\; \textrm{T}$ is still not clear, while an exotic density-wave state is theoretically…

介观与纳米尺度物理 · 物理学 2018-03-16 Toshihiro Taen , Kazuhito Uchida , Toshihito Osada

We explore the electronic ground states of Bernal-stacked multilayer graphenes using the Hartree-Fock mean-field approximation and the full-parameter band model. We find that the electron-electron interaction tends to open a band gap in…

介观与纳米尺度物理 · 物理学 2017-07-05 Mikito Koshino , Kyoka Sugisawa , Edward McCann

Crystalline rhombohedral multilayer graphene (RMG) has emerged as an ideal platform for studying unconventional superconductivity. Here, we report the observation of superconductivity in moir\'eless rhombohedral heptalayer graphene (RHG) at…

We report experimental observation of the reentrant integer quantum Hall effect in graphene, appearing in the N$=$2 Landau level. Similar to high-mobility GaAs/AlGaAs heterostructures, the effect is due to a competition between…

介观与纳米尺度物理 · 物理学 2019-01-23 Shaowen Chen , Rebeca Ribeiro-Palau , Kang Yang , Kenji Watanabe , Takashi Taniguchi , James Hone , Mark O. Goerbig , Cory R. Dean

Among many remarkable qualities of graphene, its electronic properties attract particular interest due to a massless chiral character of charge carriers, which leads to such unusual phenomena as metallic conductivity in the limit of no…

介观与纳米尺度物理 · 物理学 2011-04-07 F. Guinea , M. I. Katsnelson , A. K. Geim

Rhombohedral multilayer graphene has recently emerged as a rich platform for studying correlation driven magnetic, topological and superconducting states. While most experimental efforts have focused on devices with N$\leq 9$ layers, the…

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