相关论文: Integration of Atomic Layer Epitaxy Crystalline Ga…
Because of its ultrawide bandgap, high breakdown electric field, and large area affordable substrates grown from the melt, beta Ga2O3 has attracted great attention recently for potential applications of power electronics. However, its…
The pursuit of extreme miniaturization and high power in 6G RF front-ends has cast thermal dissipation as the central challenge. Here, we have demonstrated the monolithic integration of functionally distinct single-crystal thin films,…
The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications such as wireless communication and radar systems. However, the performance and…
The ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates make \b{eta}-Ga2O3 promising for applications of next-generation power electronics while its thermal conductivity is at least one order of magnitude…
beta-Ga2O3 is a wide bandgap semiconductor with electrical properties better than SiC and GaN which makes it promising for applications of next-generation power devices. However, the thermal conductivity of \b{eta}-Ga2O3 is more than one…
The development of electronic devices, especially those that involve heterogeneous integration of materials, has led to increased challenges in addressing their thermal operational-temperature demands. The heat flow in these systems is…
Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity…
The integration of diamond with $\beta$-Ga$_2$O$_3$ presents a promising pathway to enhance thermal management in high-power electronic devices, where the inherently low thermal conductivity of $\beta$-Ga$_2$O$_3$ can lead to localized…
To achieve high device performance and high reliability for the gallium nitride (GaN)-based high electron mobility transistors (HEMTs), efficient heat dissipation is important but remains challenging. Enormous efforts have been made to…
This study investigates thermal transport across nanocrystalline diamond/AlGaN interfaces, crucial for enhancing thermal management in AlGaN/AlGaN-based devices. Chemical vapor deposition growth of diamond directly on AlGaN resulted in a…
GaN-based HEMTs have the potential to be widely used in high-power and high-frequency electronics while their maximum output powers are limited by high channel temperature induced by near-junction Joule-heating, which degrades device…
Overheating has emerged as a primary challenge constraining the reliability and performance of next-generation high-performance electronics, such as chiplets and (ultra)wide bandgap electronics. Advanced heterogeneous integration not only…
Thermal boundary resistance (TBR) in semiconductor-on-diamond structure bottlenecks efficient heat dissipation in electronic devices. In this study, to reduce the TBR between GaN and diamond, surface-activated bonding with a hybrid SiOx-Ar…
This work presents electrothermal co-design of vertical \b{eta}-Ga2O3 Schottky barrier diodes (SBDs) to enhance both heat dissipation and high field management in high-power applications. Here, we demonstrate device-level thermal management…
We report a novel approach for crafting robust diamond/\b{eta}-Ga2O3 hetero-p-n-junctions through the mechanical integration of their bulk materials. This resulting heterojunction, with a turn-on voltage of ~2.7 V at room temperature,…
Accurate evaluation of buried thermal interfaces is vital for understanding and optimizing heat dissipation in wide- and ultra-wide-bandgap (WBG/UWBG) semiconductor devices. Conventional time-domain thermoreflectance (TDTR) typically probes…
Thermal boundary conductance (TBC) across metal diamond interfaces plays a critical role in the thermal management of future diamond based ultrawide bandgap semiconductor devices. Molecular dynamics is a sophisticated method to predict TBC…
Ulta-wide bandgap semiconductors based on $\beta$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most…
A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfacial mixing, surface chemistry, crystal orientation,…
Aiming at developing high thermal conductivity copper/diamond composite, an unconventional approach applying self-assembled monolayer (SAM) prior to the high-temperature sintering of copper/diamond composite was utilized to enhance the…