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相关论文: Dynamical $t/U$ Expansion of the Doped Hubbard Mod…

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A new slave-spin representation of fermion operators has recently been proposed for the half-filled Hubbard model. We show that with the addition of a gauge variable, the formalism can be extended to finite doping. The resulting spin…

强关联电子 · 物理学 2011-01-04 S. R. Hassan , L. de' Medici

We have generalized the dynamical mean-field theory to study the doping dependence of the crossover from antiferromagnetic to short-range order modelled by an incommensurate spin density wave in the Hubbard model. The local selfenergy which…

强关联电子 · 物理学 2009-10-31 M. Fleck , A. I. Lichtenstein , A. M. Oles , L. Hedin , V. I. Anisimov

We study the doping evolution of spin excitations in a 1D Hubbard model and its downfolded spin Hamiltonians, by using exact diagonalization combined with cluster perturbation theory. In all models, we observe hardening (softening) of spin…

The Mott metal-insulator transition in the Hubbard model is studied by constructing a dynamical slave-boson mean-field theory in the limit of large lattice coordination number $z$ that incorporates the binding between doubly occupied…

强关联电子 · 物理学 2020-01-15 Sen Zhou , Long Liang , Ziqiang Wang

We reconsider the strong-coupling expansion for the Hubbard model recently introduced by Sarker and Pairault {\it et al.} By introducing slave particles that act as projection operators onto the empty, singly occupied and doubly occupied…

强关联电子 · 物理学 2009-03-02 N. Dupuis , S. Pairault

We reinvestigate a doped antiferromagnetic Mott insulator based on the slave-fermion approach of the t-J model, where antiferromagnetic spin fluctuations and doped holes are described by bosonic spinons and fermionic holons, respectively.…

强关联电子 · 物理学 2008-11-18 Chenglong Jia , Ki-Seok Kim

We discuss the relevance of the improved mean-field slave-fermion theory to describe the Nagaoka ($U=\infty$) limit of the Hubbard model. In this theory the crucial on-site constraint of no double electron occupancy is taken into account…

强关联电子 · 物理学 2013-05-29 Evgueny Kochetov , Fabio L. Braghin , Alvaro Ferraz

With the hierarchical Green's function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green's function and related multiple-point correlation…

强关联电子 · 物理学 2020-01-29 Yu-Liang Liu

We develop a dynamical mean-field theory approach for the spiral magnetic order, changing to a local coordinate frame with preferable spin alignment along the $z$-axis, which can be considered with the impurity solvers treating the spin…

强关联电子 · 物理学 2023-06-06 I. A. Goremykin , A. A. Katanin

We consider the slave-fermion Schwinger-boson decomposition of an effective model obtained through a systematic low-energy reduction of the three-band Hubbard Hamiltonian. The model includes a three-site term t'' similar to that obtained in…

强关联电子 · 物理学 2009-10-30 C. D. Batista , L. O. Manuel , H. A. Ceccatto , A. A. Aligia

We develop a slave-boson theory for the t-J model at finite doping which respect a SU(2) symmetry -- a symmetry previously known to be important at half filling. The mean field phase diagram is found to be consistent with the phases…

强关联电子 · 物理学 2016-08-31 Patrick A. Lee , Naoto Nagaosa , Tai-Kai Ng , Xiao-Gang Wen

The $t$-model represents the Hubbard model in the limit $U \to \infty$ and is one of the basic models of strongly correlated electrons. On a one-dimensional chain, the model is integrable, and the charge dynamics corresponds to that of free…

强关联电子 · 物理学 2026-03-23 Jakub Rękas , Marcin Mierzejewski , Zala Lenarčič , Peter Prelovšek

We reformulate the time-dependent Gutzwiller approximation by M. Schir\'o and M. Fabrizio [Phys. Rev. Lett. 105, 076401 (2010)] in the framework of slave-boson mean-field theory, which is used to investigate the dynamical Mott transition of…

强关联电子 · 物理学 2013-07-17 Malte Behrmann , Michele Fabrizio , Frank Lechermann

We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical…

强关联电子 · 物理学 2009-11-07 Y. Ono , R. Bulla , A. C. Hewson , M. Potthoff

Within the Kotliar-Ruckenstein slave-boson approach, we have studied the antiferromagnetic (AF) properties for the $t$-$t'$-$t''$-$U$ model applied to electron-doped cuprate superconductors. Due to inclusion of spin fluctuations the AF…

强关联电子 · 物理学 2009-11-11 Qingshan Yuan , Feng Yuan , C. S. Ting

We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both…

强关联电子 · 物理学 2009-11-11 A. Camjayi , R. Chitra , M. J. Rozenberg

Magnetic properties of Hubbard model have been studied extensively. A theoretical description of these states, however, is not straight forward within conventional mean-field approach due to the electron correlation effects. Here we provide…

强关联电子 · 物理学 2023-05-09 Jiasheng Qian , Zhiguang Liao , Rong Yu

We investigate the superconductivity in the $t-J-U$ model within a slave-spin formalism. We show that the BCS mean-field theory implemented with the slave spin formalism naturally predicts two distinct gaps which are the pairing gap of the…

强关联电子 · 物理学 2016-05-16 Wei-Cheng Lee

We study d-wave superconductivity in the extended Hubbard model in the strong correlation limit for a large intersite Coulomb repulsion V. We argue that in the Mott-Hubbard regime with two Hubbard subbands there emerges a new energy scale…

强关联电子 · 物理学 2014-09-08 Nikolay M. Plakida , Viktor S. Oudovenko

The equation for the electron Green's function of the fermionic Hubbard model, derived using the strong coupling diagram technique, is solved self-consistently for the near-neighbor form of the kinetic energy and for half-filling. In this…

强关联电子 · 物理学 2015-06-11 A. Sherman
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