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相关论文: Room temperature interlayer exciton valley polariz…

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The band structure of many semiconducting monolayer transition metal dichalcogenides (TMDs) possesses two degenerate valleys, with equal and opposite Berry curvature. It has been predicted that, when illuminated with circularly polarized…

介观与纳米尺度物理 · 物理学 2017-09-19 Nicolas Ubrig , Sanghyun Jo , Marc Philippi , Davide Costanzo , Helmuth Berger , Alexey B. Kuzmenko , Alberto F. Morpurgo

The exciton valley dynamics in van der Waals heterostructures with transition metal dichalcogenides monolayers is driven by the long-range exchange interaction between the electron and the hole in the exciton. It couples the states active…

介观与纳米尺度物理 · 物理学 2021-02-10 A. I. Prazdnichnykh , M. M. Glazov , L. Ren , C. Robert , B. Urbaszek , X. Marie

Two-dimensional semiconductors feature valleytronics phenomena due to locking of the spin and momentum valley of the electrons. However, the valley polarization is intrinsically limited in monolayer crystals by the fast intervalley…

介观与纳米尺度物理 · 物理学 2019-07-10 Long Zhang , Rahul Gogna , G. William Burg , Jason Horng , Eunice Paik , Yu-Hsun Chou , Kyounghwan Kim , Emanuel Tutuc , Hui Deng

In van der Waals heterostructures of two-dimensional transition-metal dichalcogenides (2D TMDCs) electron and hole states are spatially localized in different layers forming long-lived interlayer excitons. Here, we have investigated, from…

材料科学 · 物理学 2020-11-03 Muhammad S. Ramzan , Jens Kunstmann , Agnieszka B. Kuc

Atomically thin layered two dimensional (2D) material has provided a rich library for both fundamental research and device applications. One of the special advantages is that, bandgap engineering and controlled material response can be…

介观与纳米尺度物理 · 物理学 2019-12-02 Yuanda Liu , Hanlin Fang , Abdullah Rasmita , Yu Zhou , Juntao Li , Ting Yu , Qihua Xiong , Nikolay Zheludev , Jin Liu , Weibo Gao

A direct band gap, remarkable light-matter coupling as well as strong spin-orbit and Coulomb interaction establish two-dimensional (2D) crystals of transition metal dichalcogenides (TMDs) as an emerging material class for fundamental…

The valley pseudospin in monolayer transition metal dichalcogenides (TMDs) has been proposed as a new way to manipulate information in various optoelectronic devices. This relies on a large valley polarization that remains stable over long…

介观与纳米尺度物理 · 物理学 2017-12-22 Fahad Mahmood , Zhanybek Alpichshev , Yi-Hsien Lee , Jing Kong , Nuh Gedik

We present a theoretical analysis of valley pseudospin control in the transition metal dichalcogenide (TMD) monolayer by utilizing the magnetic proximity effect of 2D magnetic layer and, propose self-consistent analysis of photoluminescence…

介观与纳米尺度物理 · 物理学 2026-05-20 V. N. Mantsevich

The robust spin and momentum valley locking of electrons in two-dimensional semiconductors make the valley degree of freedom of great utility for functional optoelectronic devices. Owing to the difference in optical selection rules for the…

A rate equation model for the dark and bright excitons kinetics is proposed which explains the wide variation in the observed degree of circular polarization of the PL emission in different TMDs monolayers. Our work suggests that the dark…

介观与纳米尺度物理 · 物理学 2017-01-18 M. Baranowski , A. Surrente , D. K. Maude , M Ballottin , A. A. Mitioglu , P. C. M. Christianen , Y. C. Kung , D. Dumcenco , A. Kis , P Plochocka

Two-dimensional (2D) materials, such as graphene1, boron nitride2, and transition metal dichalcogenides (TMDs)3-5, have sparked wide interest in both device physics and technological applications at the atomic monolayer limit. These 2D…

The interaction between off-resonant laser pulses and excitons in monolayer transition metal dichalcogenides is attracting increasing interest as a route for the valley-selective coherent control of the exciton properties. Here, we extend…

The vertical stacking of two-dimensional materials into heterostructures gives rise to a plethora of intriguing optoelectronic properties and presents an unprecedented potential for technological development. While much progress has been…

介观与纳米尺度物理 · 物理学 2022-06-27 Joshua J. P. Thompson , Victoria Lumsargis , Maja Feierabend , Quichen Zhao , Kang Wang , Letian Dou , Libai Huang , Ermin Malic

Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron doping of TMDs leads to the conversion of neutral excitons into…

Atomically thin materials such as graphene and monolayer transition metal dichalcogenides (TMDs) exhibit remarkable physical properties resulting from their reduced dimensionality and crystal symmetry. The family of semiconducting…

Two-dimensional (2D) van-der-Waals materials are a promising platform for exciton state engineering. In this paper, we study the properties of excitons in 2D group VI transition-metal dichalcogenide (TMD) semiconductors that are modified by…

强关联电子 · 物理学 2026-05-08 Jose M. Torres-Lopez , Sudipta Kundu , Felipe H. da Jornada , Tony Heinz , Allan H. MacDonald

Interlayer excitons (IXs), composed of electron and hole states localized in different layers, excel in bilayers composed of atomically thin van der Waals materials such as semiconducting transition metal dichalcogenides (TMDs) due to…

介观与纳米尺度物理 · 物理学 2024-07-16 Mauro Brotons-Gisbert , Brian D. Gerardot , Alexander W. Holleitner , Ursula Wurstbauer

van der Waals heterostructures consisting of vertically stacked transition-metal dichalcogenides (TMDs) exhibit a rich landscape of bright and dark intra- and interlayer excitons. In spite of a growing literature in this field of research,…

介观与纳米尺度物理 · 物理学 2023-04-17 Joakim Hagel , Samuel Brem , Christopher Linderälv , Paul Erhart , Ermin Malic

Transition metal dichalcogenides (TMDs) exhibit remarkable optical properties due to the diverse number of strongly bound excitons, which can be fine-tuned by alloying. Despite a flurry of research activity in characterizing these excitons,…

Excitons in semiconductors, bound pairs of excited electrons and holes, can form the basis for new classes of quantum optoelectronic devices. A van der Waals heterostructure built from atomically thin semiconducting transition metal…