相关论文: Temperature scaling of reverse current generated i…
Silicon detector technologies are often employed for high energy particle physics applications due to their excellent radiation hardness. Radiation damage in the form of bulk or substrate damage is dependent on the incident particle species…
Solar flares result in an increase of the solar irradiance at all wavelengths. While the distribution of the flare fluence observed in coronal emission has been widely studied and found to scale as f(E) ~ E^{-\alpha}, with \alpha slightly…
A method is proposed for determining the electric field in highly-irradiated silicon pad diodes using admittance-frequency (Y-f ), and current measurements (I). The method is applied to Y-f and I data from square n+p diodes of 25mm2 area…
To face the higher levels of radiation due to the 10-fold increase in integrated luminosity during the High-Luminosity LHC, the CMS detector will replace the current Calorimeter Endcap (CE) using the High-Granularity Calorimeter (HGCAL)…
The resistivity of polycrystalline chemical vapor deposition diamond sensors is studied in samples exposed to fluences relevant to the environment of the High Luminosity Large Hadron Collider. We measure the leakage current for a range of…
The parallel magnetic field tuned two-dimensional superconductor-insulator transition has been investigated in ultrathin films of amorphous Bi. The resistance is found to be independent of temperature on both sides of the transition below…
In this paper the weighting field $E_W$ and the frequency dependence of the admittance Y of n$^+$p pad sensors irradiated by 24 GeV/c protons to equivalent fluences in the range $\Phi_{\rm eq} = 3$ to $13\times 10^{15}$ cm$^{-2}$ are…
Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon…
Elastic constants c11, c12 and c44 of degenerately doped silicon are studied experimentally as a function of the doping level and temperature. First and second order temperature coefficients of the elastic constants are extracted from…
We have studied the temperature behavior of the electron spin resonance (ESR) spectra of nitrogen (N) donors in n-type 6H SiC crystals grown by Lely and sublimation sandwich methods (SSM) with donor concentration of 10^17 cm^(-3) at…
An effective temperature $T_{\rm eff}$ which differs from the bath temperature is believed to play an essential role in the theory of elasto-plasticity of amorphous solids. The definition of a measurable $T_{\rm eff}$ in the literature on…
Millimeter-wave transmission measurements have been performed in amorphous niobium-silicon alloy samples where the DC conductivity follows the critical temperature dependence $\sigma_{dc} \propto T^{1/2}$. The real part of the conductivity…
As shown in our previous studies, geometrical field grading techniques such as stacked and protruding substrate designs cannot well mitigate high electric stress issue within power electronics modules. However, it was shown that a…
Competition between superconducting and ferromagnetic ordering at interfaces between ferromagnets (F) and superconductors (S) gives rise to several proximity effects such as odd-triplet superconductivity and spin-polarized supercurrents. A…
Temperature and fluence dependence of the transient photoinduced reflectivity and the magnetooptical Kerr angle was measured in two Pr0.6Ca0.4MnO3 thin films subject to tensile and compressive substrate-induced strain. A photoinduced…
Topography evolution of Si(100) surface due to oblique incidence low energy ion beam sputtering (IBS) is investigated. Experiments were carried out at different elevated temperatures from 20$^{\circ}$C to 450$^{\circ}$C and at each…
In this work, we investigate the temperature-dependent behavior of the pure (undoped) Cu(100) surface using first-principles calculations within the Density Functional Theory framework. One of the main objectives is to determine whether the…
Non-volatile memory (NVM) devices that reliably operate at temperatures above 300 $^\circ$C are currently non-existent and remains a critically unmet challenge in the development of high-temperature (T) resilient electronics, necessary for…
Spin defects in silicon carbide (SiC) have attracted increasing interest due to their excellent optical and spin properties, which are useful in quantum information processing. In this paper, we systematically investigate the temperature…
Thin pad detectors made from 75 $\mu$m thick epitaxial silicon on low resistivity substrate were irradiated with reactor neutrons to fluences from 2.5$\times 10^{16}$ n/cm$^2$ to 1$\times 10^{17}$ n/cm$^2$. Edge-TCT measurements showed that…