相关论文: Controlling spin-orbit torque by polarization fiel…
Spin-orbit torques (SOTs) have opened a new path to switch the magnetization in perpendicularly magnetized films and are of great interest due to their potential applications in novel data storage technology, such as the magnetic random…
Electrical switching of antiferromagnets is an exciting recent development in spintronics, which promises active antiferromagnetic devices with high speed and low energy cost. In this emerging field, there is an active debate about the…
Two-dimensional (2D) magnets have broad application prospects in the spintronics, but how to effectively control them with a small electric field is still an issue. Here we propose that 2D magnets can be efficiently controlled in a…
Electrical manipulation of spin textures inside antiferromagnets represents a new opportunity for developing spintronics with superior speed and high device density. Injecting spin currents into antiferromagnets and realizing efficient…
Recent studies rediscovered the crucial role of field-like spin orbit torque (SOT) in nanosecond-timescale SOT dynamics. However, there is not yet an effective way to control its relative amplitude. Here, we experimentally modulate the…
We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit…
Topological insulators (TIs) with spin momentum locked topological surface states (TSS) are expected to exhibit a giant spin-orbit torque (SOT) in the TI/ferromagnet systems. To date, the TI SOT driven magnetization switching is solely…
Electric-field control of magnetization dynamics is fundamentally and technologically important for future spintronic devices. Here, based on electric-field control of both magnetic anisotropy and spin--orbit torque, two distinct methods…
Ferrimagnetic insulators (FiMI) have been intensively used in microwave and magneto-optical devices as well as spin caloritronics, where their magnetization direction plays a fundamental role on the device performance. The magnetization is…
The manipulation of magnetic properties using either electrical currents or gate bias is the key of future high-impact nanospintronics applications such as spin-valve read heads, non-volatile logic, and random-access memories. The current…
Given the paucity of single phase multiferroic materials (with large ferromagnetic moment), composite systems seem an attractive solution in the quest to realize magnetoelectric cou-pling between ferromagnetic and ferroelectric order…
We propose a microscopic theory for magnetic switching of electric polarization (P) in the spin-spiral multiferroics by taking TbMnO3 and DyMnO3 as examples. We reproduce their phase diagrams under a magnetic field H_ex by Monte-Carlo…
As a room-temperature multiferroic, BiFeO3 has been intensively investigated for both magnetoelectric devices and non-volatile ferroelectric memory applications. Both magnetoelectric and ferroelectric memory devices have the same control…
The spin currents generated by spin-orbit coupling (SOC) in the nonmagnetic metal layer or at the interface with broken inversion symmetry are of particular interest and importance. Here, we have explored the spin current generation…
We present the microscopic theory of improper multiferroicity in BiMnO3, which can be summarized as follows: (1) the ferroelectric polarization is driven by the hidden antiferromagnetic order in the otherwise centrosymmetric C2/c structure;…
Measurements of switching via spin-orbit coupling (SOC) mechanisms are discussed for a pair of inverted Pt/Co/Pt stacks with asymmetrical Pt thicknesses. Taking into account the planar Hall effect contribution, effective fields of…
Current-induced spin-orbit torques (SOTs) represent one of the most effective ways to manipulate the magnetization in spintronic devices. The orthogonal torque-magnetization geometry, the strong damping, and the large domain wall velocities…
Spintronic devices as alternatives to traditional semiconductor-based electronic devices attract considerable interest as they offer zero quiescent power, built-in memory, scalability, and reconfigurability. To realize spintronic logic…
We theoretically study the spin-polarized transport through a single-molecule magnet, which is weakly coupled to ferromagnetic leads, by means of the rate-equation approach. We consider both the ferromagnetic and antiferromagnetic…
The spin Hall effect (SHE) generates spin currents within nonmagnetic materials. Previously, studies of the SHE have been motivated primarily to understand its fundamental origin and magnitude. Here we demonstrate, using measurement and…