中文
相关论文

相关论文: Stacking control in graphene-based materials: a pr…

200 篇论文

Stackings in graphene have a pivotal role in properties to be discussed in the future, as seen in the recently found superconductivity of twisted bilayer graphene. Beyond bilayer graphene, the stacking order of multilayer graphene can be…

介观与纳米尺度物理 · 物理学 2022-12-12 Raúl Guerrero-Avilés , Marta Pelc , Fabian Geisenhof , Thomas Weitz , Andrés Ayuela

In graphite crystals, layers of graphene reside in three equivalent, but distinct, stacking positions typically referred to as A, B, and C projections. The order in which the layers are stacked defines the electronic structure of the…

Few layer graphene (FLG) has been recently intensively investigated for its variable electronic properties defined by a local atomic arrangement. While the most natural layers arrangement in FLG is ABA (Bernal) stacking, a metastable ABC…

The crystal structure of a material plays an important role in determining its electronic properties. Changing from one crystal structure to another involves a phase transition which is usually controlled by a state variable such as…

Crystal symmetry plays a central role in governing a wide range of fundamental physical phenomena. One example is the nonlinear optical second harmonic generation (SHG), which requires inversion symmetry breaking. Here we report a unique…

介观与纳米尺度物理 · 物理学 2019-11-27 Yuwei Shan , Yingguo Li , Di Huang , Qingjun Tong , Wang Yao , Wei-Tao Liu , Shiwei Wu

Few-layer graphene (FLG) has been predicted to exist in various crystallographic stacking sequences, which can strongly influence the electronic properties of FLG. We demonstrate an accurate and efficient method to characterize stacking…

材料科学 · 物理学 2011-02-01 Chun Hung Lui , Zhiqiang Li , Zheyuan Chen , Paul V. Klimov , Louis E. Brus , Tony F. Heinz

Small-twist-angle bilayer graphene supports strongly correlated insulating states and superconductivity. Twisted few-layer graphene systems are likely to open up new directions for strong correlation physics in moir\'e superlattices. We…

材料科学 · 物理学 2019-07-30 Xiao Li , Fengcheng Wu , Allan H. MacDonald

Electronic properties of bilayer and multilayer graphene have generally been interpreted in terms of AB or Bernal stacking. However, it is known that many types of stacking defects can occur in natural and synthetic graphite; rotation of…

材料科学 · 物理学 2011-11-09 J. M. B. Lopes dos Santos , N. M. R. Peres , A. H. Castro Neto

The discovery of superconductivity and correlated electronic states in the flat bands of twisted bilayer graphene has raised a lot of excitement. Flat bands also occur in multilayer graphene flakes that present rhombohedral (ABC) stacking…

介观与纳米尺度物理 · 物理学 2020-08-26 Jean Paul Nery , Matteo Calandra , Francesco Mauri

The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic structure. In trilayer graphene, rhombohedral stacking (ABC) is particularly intriguing, exhibiting a flat band with an…

材料科学 · 物理学 2017-06-12 Changhua Bao , Wei Yao , Eryin Wang , Chaoyu Chen , José Avila , Maria C. Asensio , Shuyun Zhou

The electronic structure of few-layer graphene (FLG) samples with crystalline order was investigated experimentally by infrared absorption spectroscopy for photon energies ranging from 0.2 - 1 eV. Distinct optical conductivity spectra were…

材料科学 · 物理学 2015-05-18 Kin Fai Mak , Jie Shan , Tony F. Heinz

The electronic properties of a material depend on the spatial freedom of the electron wavefunction. A well-known example is graphite, which is a conventional gapless semiconductor, while a single layer of it, graphene, exhibits extremely…

介观与纳米尺度物理 · 物理学 2026-01-28 Mohammadamir Bazrafshan , Thomas. D. Kühne

In this paper, we analytically investigate the electronic structure of Bernal stacking (AB stacking) graphene evolving from monolayer (a zero-gap semiconductor with a linear Dirac-like spectrum around the Fermi energy) to multi-layer…

介观与纳米尺度物理 · 物理学 2007-05-23 Z. F. Wang , Huaixiu Zheng , Q. W. Shi , Jie Chen , Jinlong Yang , J. G. Hou

The AB-stacked bilayer graphene (BLG) is a pure semiconductor whose band gap and properties can be tuned by various methods such as doping or applying gate voltage. Here we show an alternative method to control the electronic properties of…

材料科学 · 物理学 2017-02-06 Srimanta Pakhira , Kevin P. Lucht , Jose L. Mendoza-Cortes

A striking feature of bilayer graphene is the induction of a significant band gap in the electronic states by the application of a perpendicular electric field. Thicker graphene layers are also highly attractive materials. The ability to…

介观与纳米尺度物理 · 物理学 2012-02-21 Chun Hung Lui , Zhiqiang Li , Kin Fai Mak , Emmanuele Cappelluti , Tony F. Heinz

Stacking geometry in multilayer graphene (MLG) provides an interesting degree of freedom to engineer its electronic structure near the Fermi level, wherein the linear bands in single layer graphene could retain or evolve into parabolic or…

介观与纳米尺度物理 · 物理学 2026-05-28 Fred Sun , Jia-An Yan

In this thesis we will focus on a particular variant of few-layer graphene -- ABA-stacked trilayer graphene. Bernal (ABA) stacked trilayer graphene (TLG) is a multiband system consisting of a pair of Dirac-like massless linear bands and a…

介观与纳米尺度物理 · 物理学 2024-01-24 Biswajit Datta

This article reviews the theoretical and experimental work related to the electronic properties of bilayer graphene systems. Three types of bilayer stackings are discussed: the AA, AB, and twisted bilayer graphene. This review covers…

介观与纳米尺度物理 · 物理学 2016-10-25 A. V. Rozhkov , A. O. Sboychakov , A. L. Rakhmanov , Franco Nori

Pristine bilayer graphene behaves in some instances as an insulator with a transport gap of a few meV. This behaviour has been interpreted as the result of an intrinsic electronic instability induced by many-body correlations. Intriguingly,…

介观与纳米尺度物理 · 物理学 2014-04-29 P. San-Jose , R. V. Gorbachev , A. K. Geim , K. S. Novoselov , F. Guinea

The mechanical response of embedded ABA trilayer graphene flakes loaded in tension and compression on polymer beams is monitored by simultaneous Raman measurements through the strain sensitivity of the G or 2D peaks. A characteristic…

材料科学 · 物理学 2016-07-19 G. Tsoukleri , J. Parthenios , C. Galiotis , K. Papagelis
‹ 上一页 1 2 3 10 下一页 ›