相关论文: Spin Seebeck imaging of spin-torque switching in a…
We investigate the spin Hall magnetoresistance in thin film bilayer heterostructures of the heavy metal Pt and the antiferromagnetic insulator NiO. While rotating an external magnetic field in the easy plane of NiO, we record the…
Efficient manipulation of the N\'eel vector in antiferromagnets can be induced by generation of spin orbit (SOT) or spin-transfer (STT) torques. Here we predict another possibility for antiferromagnetic domain switching by using a non-zero…
We report on the observation of the spin Seebeck effect in antiferromagnetic MnF$_2$. A device scale on-chip heater is deposited on a bilayer of Pt (4 nm)/MnF$_2$ (110) (30 nm) grown by molecular beam epitaxy on a MgF$_2$ (110) substrate.…
Antiferromagnetic spintronics is an emerging research field whose focus is on the electrical and optical control of the antiferromagnetic order parameter and its utility in information technology devices. An example of recently discovered…
NiO is a good candidate for ultrafast magnetic switching because of its large spin density, antiferromagnetic order, and clearly separated intragap states. In order to detect and monitor the switching dynamics, we develop a systematic…
Antiferromagnets exhibit distinctive characteristics such as ultrafast dynamics and robustness against perturbative fields, thereby attracting considerable interest in fundamental physics and technological applications. Recently, it was…
We develop a microscopic theory for the spin Seebeck effect (SSE) in N\'eel and canted phases of antiferromagnetic insulators. We calculate the DC spin current tunneling from the antiferromagnet to an attached metal, incorporating the…
Antiferromagnets are magnetically ordered materials which exhibit no net moment and thus are insensitive to magnetic fields. Antiferromagnetic spintronics aims to take advantage of this insensitivity for enhanced stability, while at the…
We report temperature-dependent spin-Seebeck measurements on Pt/YIG bilayers and Pt/NiO/YIG trilayers, where YIG (Yttrium iron garnet, Y$_3$Fe$_5$O$_{12}$) is an insulating ferrimagnet and NiO is an antiferromagnet at low temperatures. The…
Nanoscale detection and control of the magnetic order underpins a broad spectrum of fundamental research and practical device applications. The key principle involved is the breaking of time-reversal ($\cal{T}$) symmetry, which in…
The family of monolayer two-dimensional (2D) materials hosts a wide range of interesting phenomena, including superconductivity, charge density waves, topological states and ferromagnetism, but direct evidence for antiferromagnetism in the…
Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching…
Recent demonstrations of the electrical switching of antiferromagnets (AFs) have given an enormous impulse to the field of AF spintronics. Many of these observations are plagued by non-magnetic effects that are very difficult to distinguish…
We suggest coherent switching of canted antiferromagnetic (AFM) spins using spin-orbit torque (SOT) in small magnet. The magnetic system of orthoferrite features biaxial easy anisotropy and the Dzyaloshinskii Moriya interaction, which is…
The antiferroaxial state is emerging as an important ferroic order in condensed matter systems. Here, we establish antiferroaxial altermagnetism as a broadly prevalent, generic, and microscopically grounded multiferroic mechanism, in which…
The effects of current induced N\'eel spin-orbit torques on the antiferromagnetic domain structure of epitaxial Mn$_2$Au thin films were investigated by X-ray magnetic linear dichroism - photoemission electron microscopy (XMLD-PEEM). We…
We prepare the high quality epitaxial MgO(001)[100]/Pt(001)[100]/NiO(001)[100]/FeNi/SiO2 films to investigate the spin transport in the NiO antiferromagnetic insulator. The ferromagnetic resonance measurements of the FeNi under a spin…
The spin-orbit torque, a torque induced by a charge current flowing through the heavy-metal conducting layer with strong spin-orbit interactions, provides an efficient way to control the magnetization direction in heavy-metal/ferromagnet…
Electrical switching of N\'eel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically-driven switching of ferromagnetic order via spin-orbit torques, electrical switching of…
Antiferromagnets are promising candidates for ultrafast spintronic applications, leveraging current-induced spin-orbit torques. However, experimentally distinguishing between different switching mechanisms of the staggered magnetization…