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The crystal structure of a material plays an important role in determining its electronic properties. Changing from one crystal structure to another involves a phase transition which is usually controlled by a state variable such as…

Stackings in graphene have a pivotal role in properties to be discussed in the future, as seen in the recently found superconductivity of twisted bilayer graphene. Beyond bilayer graphene, the stacking order of multilayer graphene can be…

介观与纳米尺度物理 · 物理学 2022-12-12 Raúl Guerrero-Avilés , Marta Pelc , Fabian Geisenhof , Thomas Weitz , Andrés Ayuela

The electronic structure of few-layer graphene (FLG) samples with crystalline order was investigated experimentally by infrared absorption spectroscopy for photon energies ranging from 0.2 - 1 eV. Distinct optical conductivity spectra were…

材料科学 · 物理学 2015-05-18 Kin Fai Mak , Jie Shan , Tony F. Heinz

Pristine bilayer graphene behaves in some instances as an insulator with a transport gap of a few meV. This behaviour has been interpreted as the result of an intrinsic electronic instability induced by many-body correlations. Intriguingly,…

介观与纳米尺度物理 · 物理学 2014-04-29 P. San-Jose , R. V. Gorbachev , A. K. Geim , K. S. Novoselov , F. Guinea

We investigate the behaviour of the $\pi$-electrons under compression and the effect of the stacking order of graphene layers. First we find that electrons can hardly be squeezed through the $sp^2$ network, regardless of the stacking order.…

材料科学 · 物理学 2020-03-25 Yiwei Sun , David Holec , Dominik Nöger , David Dunstan , Colin Humphreys

First-principles calculation has been performed to investigate the stability and electronic properties of double-layer graphene heterostructure (DLGH). In this system, two graphene layers are separated by hexagonal boron-nitride (h-BN)…

材料科学 · 物理学 2014-12-15 Mei-Yan Ni , Katsunori Wakabayashi

Graphite occurs in a range of metastable stacking orders characterized by both the number and direction of shifts between adjacent layers by the length of a single carbon-carbon bond. At the extremes are Bernal (or ``ABAB...'') stacking,…

Low-energy electronic behavior in graphite crystals is highly dependent on the relative stacking arrangement of the constituent layers. Topologically non-trivial electronic states can arise due to interrupted rhombohedral (ABC) stacking,…

介观与纳米尺度物理 · 物理学 2026-04-14 Luke Soneji , Simon Crampin , Marcin Mucha-Kruczynski

Few-layer graphene (FLG) has been predicted to exist in various crystallographic stacking sequences, which can strongly influence the electronic properties of FLG. We demonstrate an accurate and efficient method to characterize stacking…

材料科学 · 物理学 2011-02-01 Chun Hung Lui , Zhiqiang Li , Zheyuan Chen , Paul V. Klimov , Louis E. Brus , Tony F. Heinz

Experiments on bilayer graphene unveiled a fascinating realization of stacking disorder where triangular domains with well-defined Bernal stacking are delimited by a hexagonal network of strain solitons. Here we show by means of numerical…

介观与纳米尺度物理 · 物理学 2018-04-13 Fernando Gargiulo , Oleg V. Yazyev

We experimentally investigated the properties of graphite layers produced by an easy and non-conventional method of repeatedly rubbing conventional random stacked graphite bulk against insulating and semiconductor substrates. The patterned…

材料科学 · 物理学 2014-02-18 A. R. Mailian , G. Sh. Shmavonyan , M. R. Mailian

Interlayer sliding degrees of freedom often determine the physical properties of two-dimensional (2D) materials. In graphene, for instance, the metastable rhombohedral stacking arrangement hosts correlated and topological electronic phases,…

In this paper, we analytically investigate the electronic structure of Bernal stacking (AB stacking) graphene evolving from monolayer (a zero-gap semiconductor with a linear Dirac-like spectrum around the Fermi energy) to multi-layer…

介观与纳米尺度物理 · 物理学 2007-05-23 Z. F. Wang , Huaixiu Zheng , Q. W. Shi , Jie Chen , Jinlong Yang , J. G. Hou

Multilayer graphene with rhombohedral and Bernal stacking are supposed to be metallic, as predicted by density functional theory calculations using semi-local functionals. However recent angular resolved photoemission and transport data…

介观与纳米尺度物理 · 物理学 2020-05-06 Marco Campetella , Nguyen Minh Nguyen , Jacopo Baima , Lorenzo Maschio , Francesco Mauri , Matteo Calandra

Graphene multilayers exhibit electronic spectra that depend sensitively on both the number of layers and their stacking order. Beyond trilayer graphene, mixed stacking sequences (alternating Bernal and rhombohedral layers) give rise to…

Ferroelectricity (Valasek, J. Phys. Rev. 1921, 17, 475) - a spontaneous formation of electric polarisation - is a solid state phenomenon, usually, associated with ionic compounds or complex materials. Here we show that, atypically for…

材料科学 · 物理学 2023-05-29 Aitor Garcia-Ruiz , Vladimir Enaldiev , Andrew McEllistrim , Vladimir I. Fal'ko

The emerging interest in van der Waals heterostructures as new materials for opto-electronics and photonics poses questions about their stability and structure-property relations. In the framework of density-functional and many-body…

Graphene, as an atomic-thick ultrasoft membrane, almost has no resistance against out-of-plane deformations and, therefore, it is always wrinkled to a certain degree. Recently, corrugated structures and their effects on the electronic…

介观与纳米尺度物理 · 物理学 2016-09-13 Si-Yu Li , Hua Jiang , Jiao-Jiao Zhou , Haiwen Liu , Fan Zhang , Lin He

Most non-ferroelectric two-dimensional materials can be endowed with so-called sliding ferroelectricity via non-equivalent homo-bilayer stacking, which is not applicable to mono-element systems like pure graphene bilayer with inversion…

介观与纳米尺度物理 · 物理学 2023-08-31 Liu Yang , Shiping Ding , Jinhua Gao , Menghao Wu

We carry out a computational study on the geometric and electronic properties of multi-layers of silicene in different stacking configurations using a state-of-art abinitio density functional theory based calculations. In this work we…

材料科学 · 物理学 2015-02-26 C. Kamal , Aparna Chakrabarti , Arup Banerjee , S. K. Deb
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