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We present measurements of quantized conductance in electrostatically induced quantum point contacts in bilayer graphene. The application of a perpendicular magnetic field leads to an intricate pattern of lifted and restored degeneracies…

We present a study on the lifting of degeneracy of the size-quantized energy levels in an electrostatically defined quantum point contact in bilayer graphene by the application of in-plane magnetic fields. We observe a Zeeman spin splitting…

介观与纳米尺度物理 · 物理学 2022-02-03 Vanessa Gall , Rainer Kraft , Igor V. Gornyi , Romain Danneau

We show that the spectrum of subbands in an electrostatically defined quantum wire in gapped bilayer graphene directly manifests the minivalley structure and reflects Berry curvature via the associated magnetic moment of the states in the…

介观与纳米尺度物理 · 物理学 2018-10-31 Angelika Knothe , Vladimir Fal'ko

We report a well-resolved 0.7 conductance anomaly at $G = 0.7\times(2e^2/h)$ in bilayer graphene/WSe$_2$ quantum point contacts. Proximity-enhanced spin-orbit coupling splits the four-fold ground state of bilayer graphene into…

We demonstrate that, at the onset of conduction, an electrostatically defined quantum wire in bilayer graphene (BLG) with an interlayer asymmetry gap may act as a 1D semimetal, due to the multiple minivalley dispersion of its lowest…

介观与纳米尺度物理 · 物理学 2019-09-25 Thomas L M Lane , Angelika Knothe , Vladimir I Fal'ko

In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The valleys in bilayer graphene can be addressed by a perpendicular…

The interaction between itinerant electrons and localized spins is key to a wide range of electronic phenomena. Of particular interest is the regime where the interacting electrons exhibit both spin and valley degeneracy, resulting in SU(4)…

In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and…

We report on measurements of quantized conductance in gate-defined quantum point contacts in bilayer graphene that allow the observation of subband splittings due to spin-orbit coupling. The size of this splitting can be tuned from 40 to 80…

Physical properties reflecting valley asymmetry of Landau levels in a biased bilayer graphene under magnetic field are discussed. Within the $4-$band continuum model with Hartree-corrected self-consistent gap and finite damping factor we…

介观与纳米尺度物理 · 物理学 2010-01-14 Masaaki Nakamura , Eduardo V. Castro , Balazs Dora

We investigate interaction-induced valley domain walls in bilayer graphene in the $\nu=0$ quantum Hall state, subject to a perpendicular electric field that is antisymmetric across a line in the sample. Such a state can be realized in a…

强关联电子 · 物理学 2012-05-10 Chia-Wei Huang , Efrat Shimshoni , H. A. Fertig

Bilayer graphene hosts valley-chiral one dimensional modes at domain walls between regions of different interlayer potential or stacking order. When such a channel is brought into proximity to a superconductor, the two electrons of a Cooper…

介观与纳米尺度物理 · 物理学 2016-06-13 Alexander Schroer , Peter G. Silvestrov , Patrik Recher

We study transport in twisted bilayer graphene and show that electrostatic barriers can act as valley splitters, where electrons from the $K$ ($K'$) valley are transmitted only to e.g.\ the top (bottom) layer, leading to valley-layer locked…

介观与纳米尺度物理 · 物理学 2020-10-30 Christophe De Beule , Peter G. Silvestrov , Ming-Hao Liu , Patrik Recher

Bilayer graphene in a perpendicular electric field can host domain walls between regions of reversed field direction or interlayer stacking. The gapless modes propagating along these domain walls, while not strictly topological,…

介观与纳米尺度物理 · 物理学 2015-08-26 Benjamin J. Wieder , Fan Zhang , C. L. Kane

We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$\Omega$. This exceeds previously reported values of $R =~$10 -…

We study the quantum valley Hall effect and related domain wall modes in twisted bilayer graphene at a large commensurate angle. Due to the quantum valley and sub-valley Hall effect, a small deviation from the commensurate angle generates…

介观与纳米尺度物理 · 物理学 2023-09-13 Chiranjit Mondal , Rasoul Ghadimi , Bohm-Jung Yang

We use low-temperature scanning gate microscopy (SGM) to investigate the breakdown of the quantum Hall regime in an exfoliated bilayer graphene flake. SGM images captured during breakdown exhibit intricate patterns of "hotspots" where the…

介观与纳米尺度物理 · 物理学 2013-03-05 M. R. Connolly , R. K. Puddy , D. Logoteta , P. Marconcini , M. Roy , J. Griffths , G. A. C. Jones , P. Maksym , M. Macucci , C. G. Smith

Current semiconductor qubits rely either on the spin or on the charge degree of freedom to encode quantum information. By contrast, in bilayer graphene the valley degree of freedom, stemming from the crystal lattice symmetry, is a robust…

A parabolic quantum dot (QD) as realized by biasing nanostructured gates on bilayer graphene is investigated in the presence of electron-electron interaction. The energy spectrum and the phase diagram reveal unexpected transitions as…

介观与纳米尺度物理 · 物理学 2015-06-18 M. Zarenia , B. Partoens , T. Chakraborty , F. M. Peeters

The magnetic field dependence of energy levels in gapped single- and bilayer graphene quantum dots (QDs) defined by electrostatic gates is studied analytically in terms of the Dirac equation. Due to the absence of sharp edges in these types…

介观与纳米尺度物理 · 物理学 2009-11-13 Patrik Recher , Johan Nilsson , Guido Burkard , Bjoern Trauzettel
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