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相关论文: Dynamics of photo-doped charge transfer insulators

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We study the dynamics of charge-transfer insulators after a photo-excitation using the three-band Emery model which is relevant for the description of cuprate superconductors. We provide a detailed derivation of the nonequilibrium extension…

强关联电子 · 物理学 2019-12-18 Denis Golez , Martin Eckstein , Philipp Werner

Photoinduced charge-transfer processes play a key role for novel photovoltaic phenomena and devices. Thus, the development of ab initio methods that allow for an accurate and computationally inexpensive treatment of charge-transfer…

化学物理 · 物理学 2014-04-25 Iris Theophilou , M. Tassi , S. Thanos

We investigate the real-time dynamics of photoexcited electronic instabilities in a charge-transfer system model, using the time-dependent density matrix renormalization group method. The model of choice was the quarter-filled…

强关联电子 · 物理学 2014-10-21 Julian Rincon , K. A. Al-Hassanieh , Adrian E. Feiguin , Elbio Dagotto

Using a nonequilibrium implementation of the extended dynamical mean field theory (EDMFT) we simulate the relaxation after photo excitation in a strongly correlated electron system with antiferromagnetic spin interactions. We consider the…

强关联电子 · 物理学 2018-06-20 Nikolaj Bittner , Denis Golež , Hugo U. R. Strand , Martin Eckstein , Philipp Werner

We present a theoretical investigation of the voltage-driven metal insulator transition based on solving coupled Boltzmann and Hartree-Fock equations to determine the insulating gap and the electron distribution in a model system -- a one…

强关联电子 · 物理学 2018-12-03 Giuliano Chiriacò , Andrew J. Millis

We study the relaxation dynamics of photo-carriers in the paramagnetic Mott insulating phase of the half-filled two-band Hubbard model. Using nonequilibrium dynamical mean field theory, we excite charge carriers across the Mott gap by a…

强关联电子 · 物理学 2017-10-11 Hugo U. R. Strand , Denis Golež , Martin Eckstein , Philipp Werner

We study the photo-excitation dynamics of correlated band insulators, using non-equilibrium dynamical mean-field theory for the ionic Hubbard model. We find two distinct behaviors, depending on the ratio of the on-site interaction $U$ and…

强关联电子 · 物理学 2018-07-18 Nagamalleswararao Dasari , Martin Eckstein

Photo-doped states in strongly correlated charge transfer insulators are characterized by $d$-$d$ and $d$-$p$ interactions and the resulting intertwined dynamics of charge excitations and local multiplets. Here we use femtosecond x-ray…

Recent theoretical studies showed that the electronic structure of 1$T$-TaS$_2$ in the low-temperature commensurate charge density wave phase exhibits a nontrivial interplay between band-insulating and Mott insulating behavior. This has…

强关联电子 · 物理学 2023-04-19 Francesco Petocchi , Jiyu Chen , Jiajun Li , Martin Eckstein , Philipp Werner

Photo-induced metallic states in a Mott insulator are studied for the half-filled, one-dimensional Hubbard model with the time-dependent density matrix renormalization group. An irradiation of strong AC field is found to create a linear…

强关联电子 · 物理学 2009-11-13 Takashi Oka , Hideo Aoki

We define, compute and analyze the nonequilibrium differential optical conductivity of the one-dimensional extended Hubbard model at half-filling after applying a pump pulse, using the time-dependent density matrix renormalization group…

强关联电子 · 物理学 2021-08-19 Julian Rincon , Adrian E. Feiguin

Haldane model is a noninteracting model for spinless fermions showing nontrivial topological properties. Effect of the electron-electron interaction on the topological phase poses an intriguing question. By means of the Hartree-Fock mean…

强关联电子 · 物理学 2010-12-24 Lei Wang , Hao Shi , Shiwei Zhang , Xiaoqun Wang , Xi Dai , X. C. Xie

The study of nonequilibrium phenomena in interacting lattice systems can provide new perspectives on correlation effects, and information on metastable states of matter. Mott insulators are a promising class of systems for nonequilibrium…

强关联电子 · 物理学 2025-08-05 Yuta Murakami , Denis Golež , Martin Eckstein , Philipp Werner

Exact diagonalisations of the extended Hubbard model are performed. In the insulating regime it is shown that the nearest neighbour copper-oxygen repulsion, $V$, leads to Frenkel excitons in the charge transfer gap at values of $V$ of the…

凝聚态物理 · 物理学 2009-10-28 C. Vermeulen , W. Barford , E. R. Gagliano

Charge-transfer (CT) exciton effects are investigated for the optical absorption spectra of crosslinked C60 systems by using the intermediate exciton theory. We consider the C60-dimers, and the two (and three) molecule systems of the…

chem-ph · 物理学 2008-02-03 K. Harigaya

The undoped antiferromagnetic Mott insulator naturally has one charge carrier per lattice site. When it is doped with additional carriers, they are unstable to spin fluctuation-mediated Cooper pairing as well as other unconventional types…

Photoinduced charge dynamics in dimerized systems is studied on the basis of the exact diagonalization method and the time-dependent Schr\"odinger equation for a one-dimensional spinless-fermion model at half filling and a two-dimensional…

强关联电子 · 物理学 2018-03-15 Kenji Yonemitsu

We study the electronic excitations near the charge-transfer gap in insulating CuO$_2$ planes, starting from a six-band model which includes $% p_\pi $ and $d_{xy}$ orbitals and Cu-O nearest-neighbor repulsion $U_{pd}$. While the low lying…

凝聚态物理 · 物理学 2016-08-15 M. E. Simón , A. A. Aligia , C. D. Batista , E. R. Gagliano , F. Lema

Photodoped states are widely observed in laser-excited Mott insulators, in which charge excitations are quickly created and can exist beyond the duration of the external driving. Despite the fruitful experimental explorations, theoretical…

强关联电子 · 物理学 2021-01-27 Jiajun Li , Martin Eckstein

Understanding the similarities and differences between adding or removing electrons from a charge-transfer insulator may provide insights about the origin of the electron-hole asymmetry found in cuprates. Here we study with cellular…

强关联电子 · 物理学 2025-01-08 G. Sordi , G. L. Reaney , N. Kowalski , P. Sémon , A. -M. S. Tremblay
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