中文
相关论文

相关论文: Dirac-Surface-State Modulated Spin Dynamics in a F…

200 篇论文

Antiferromagnetic topological insulators (AF TIs) are predicted to exhibit exotic physical properties such as gigantic optical and topological magnetoelectric responses. While a key to achieving such phenomena relies on how to break the…

For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ and nonmagnetic…

We investigate the band dispersion and the spin texture of topologically protected surface states in the bulk topological insulators Bi2Se3 and Bi2Te3 by first-principles methods. Strong spin-orbit entanglement in these materials reduces…

介观与纳米尺度物理 · 物理学 2015-03-17 Oleg V. Yazyev , Joel E. Moore , Steven G. Louie

Magnetic impurities in topological insulators (TIs) induce backscattering via magnetic torque, unlike pristine TIs where spin-orbit locking promotes dissipationless surface states. Here we reveal that one can suppress that unwanted…

介观与纳米尺度物理 · 物理学 2025-02-17 Mohammad Shafiei , Milorad V. Milošević

The electronic spectrum on the spherical surface of a topological insulator reflects an active property of the helical surface state that stems from a constraint on its spin on a curved surface. The induced effective vector potential (spin…

介观与纳米尺度物理 · 物理学 2012-12-17 Ken-Ichiro Imura , Yukinori Yoshimura , Yositake Takane , Takahiro Fukui

Three-dimensional topological insulators (TIs) are characterized by spin-polarized Dirac-cone surface states that are protected from backscattering by time-reversal symmetry. Control of the spin polarization of topological surface states…

介观与纳米尺度物理 · 物理学 2016-06-09 J. Sánchez-Barriga , E. Golias , A. Varykhalov , J. Braun , L. V. Yashina , R. Schumann , J. Minár , H. Ebert , O. Kornilov , O. Rader

We derive a general low-energy theory for twisted moir\'e heterostructures comprised of Dirac materials. We apply our theory to heterostructures on the surface of a three dimensional topological insulator (3D TI). First, we consider the…

强关联电子 · 物理学 2023-02-21 Aaron Dunbrack , Jennifer Cano

We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2Se3 by utilizing a novel approach, namely non-volatile electrostatic gating via corona charging of electret polymers.…

介观与纳米尺度物理 · 物理学 2018-04-11 R. M. Ireland , Liang Wu , M. Salehi , S. Oh , N. P. Armitage , H. E. Katz

The topological properties of the bulk band structure of a three-dimensional topological insulator (TI) manifest themselves in the form of metallic surface states. In this paper, we propose a probe which directly couples to an exotic…

介观与纳米尺度物理 · 物理学 2015-05-19 Sthitadhi Roy , Kush Saha , Sourin Das

The development of spin-based applications of topological insulators requires the knowledge and understanding of spin texture configuration maps as they change via gating in the vicinity of an isolated Dirac node. An isolated…

介观与纳米尺度物理 · 物理学 2011-01-21 Su-Yang Xu , L. A. Wray , Y. Xia , F. von Rohr , Y. S. Hor , J. H. Dil , F. Meier , B. Slomski , J. Osterwalder , M. Neupane , H. Lin , A. Bansil , A. Fedorov , R. J. Cava , M. Z. Hasan

We study positions of chiral hinge states in higher-order topological insulators (HOTIs) with inversion symmetry. First, we exhaust all possible configurations of the hinge states in the HOTIs in all type-I magnetic space groups with…

介观与纳米尺度物理 · 物理学 2020-11-24 Yutaro Tanaka , Ryo Takahashi , Tiantian Zhang , Shuichi Murakami

The prospective of optically inducing a spin polarized current for spintronic devices has generated a vast interest in the out-of-equilibrium electronic and spin structure of topological insulators (TIs). In this Letter we prove that only…

We theoretically show that the coupling of inhomogeneous strains to the Dirac fermions of three-dimensional topological insulators (3DTI) in thin film geometries results in the occurrence of phase transitions between topologically distinct…

介观与纳米尺度物理 · 物理学 2019-09-25 Raffaele Battilomo , Niccoló Scopigno , Carmine Ortix

The surface of a topological insulator hosts Dirac electronic states with the spin-momentum locking, which constrains spin orientation perpendicular to electron momentum. As a result, collective plasma excitations in the interacting Dirac…

介观与纳米尺度物理 · 物理学 2021-08-18 Dmitry K. Efimkin , Mehdi Kargarian

Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES)…

We investigate the nature of the ordering among magnetic adatoms, randomly deposited on the surface of topological insulators. Restricting ourselves to dilute impurity and weak coupling (between itinerant fermion and magnetic impurities)…

介观与纳米尺度物理 · 物理学 2016-12-21 Chun-Xiao Liu , Bitan Roy , Jay D. Sau

Topological insulators are new states of matter with a bulk gap and robust gapless surface states protected by time-reversal symmetry. When time-reversal symmetry is broken, the surface states are gapped, which induces a topological…

材料科学 · 物理学 2015-03-20 Weidong Luo , Xiao-Liang Qi

Three-dimensional topological insulators are a class of Dirac materials, wherein strong spin-orbit coupling leads to two-dimensional surface states. The latter feature spin-momentum locking, i.e., each momentum vector is associated with a…

介观与纳米尺度物理 · 物理学 2018-02-07 Paul Seifert , Kristina Vaklinova , Sergey Ganichev , Klaus Kern , Marko Burghard , Alexander W. Holleitner

The disadvantage of BaBiO$_3$ of not being a topological insulator despite having symmetry protected Dirac state is overcome by shifting the Fermi level (E$_F$) via fluorination. The DFT calculations reveal that the fluorination neither…

材料科学 · 物理学 2019-01-28 Bramhachari Khamari , B. R. K Nanda

Many applications for topological insulators (TIs) as well as new phenomena require devices with reduced dimensions. While much progress has been made to realize thin films of TIs with low bulk carrier density, nanostructures have not yet…