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相关论文: Single, double, and triple quantum dots in Ge/Si n…

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The possibility of a novel type of semiconductor quantum dots obtained by spatially modulating the spin-orbit coupling intensity in III-V heterostructures is discussed. Using the effective mass model we predict confined one-electron states…

介观与纳米尺度物理 · 物理学 2009-11-10 M. Valin-Rodriguez , A. Puente , L. Serra

In this paper, several nanodevices which realize basic single heavy hole qubit operations are proposed and supported by time dependent self consistent Poisson-Schr\"{o}dinger calculations using a four band heavy hole-light hole model. In…

介观与纳米尺度物理 · 物理学 2015-06-15 P. Szumniak , S. Bednarek , J. Pawłowski , B. Partoens

We propose the use of quantum dots formed in a semiconductor nanocolumn for the realization of charge or spin based quantum bits. The radial carrier confinement is achieved by employing conformal overgrowth, while multiple segmented gates…

其他凝聚态物理 · 物理学 2007-05-23 K. M. Indlekofer , Th. Schäpers

We report Pauli spin blockade in an impurity defined carbon nanotube double quantum dot. We observe a pronounced current suppression for negative source-drain bias voltages which is investigated for both symmetric and asymmetric coupling of…

We present a feasible scheme for performing an optically controlled phase gate between two conduction electron spin qubits in adjacent self assembled quantum dots. Interaction between the dots is mediated by the tunneling of the valence…

量子物理 · 物理学 2015-05-20 Li-Bo Chen , L. J. Sham , Edo Waks

The magnetic properties of hole quantum dots in Ge are sensitive to their shape due to the interplay between strong spin-orbit coupling and confinement. We show that the split-off band, surrounding SiGe layers, and hole-hole interactions…

We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we…

介观与纳米尺度物理 · 物理学 2015-04-21 Bahram Ganjipour , Martin Leijnse , Lars Samuelson , H. Q. Xu , Claes Thelander

We investigate theoretically the spin purity of single holes confined in vertically coupled GaAs/AlGaAs quantum dots (QDs) under longitudinal magnetic fields. A unique behavior is observed for triangular QDs, by which the spin is largely…

介观与纳米尺度物理 · 物理学 2015-07-13 Josep Planelles , Fernando Rajadell , Juan I. Climente

We exploit hyperfine interactions in a single Mn-ion confined in a quantum dot (QD) to create a qudit, i.e. a multi-level quantum-bit system, with well defined, addressable and robust set of spin states for the realization of universal…

介观与纳米尺度物理 · 物理学 2019-09-18 Fabrizio Moro , Alistair J. Fielding , Lyudmila Turyanska , Amalia Patanè

Silicon spin qubits have achieved high-fidelity one- and two-qubit gates, above error correction thresholds, promising an industrial route to fault-tolerant quantum computation. A significant next step for the development of scalable…

介观与纳米尺度物理 · 物理学 2021-02-02 Fabio Ansaloni , Anasua Chatterjee , Heorhii Bohuslavskyi , Benoit Bertrand , Louis Hutin , Maud Vinet , Ferdinand Kuemmeth

We present a theory of a two qubit gate with macroscopic singlet-triplet (ST) qubits in synthetic spin-one chains in InAsP quantum dot nanowires. The macroscopic topologically protected singlet-triplet qubits are built with two spin-half…

介观与纳米尺度物理 · 物理学 2025-03-07 Hassan Allami , Daniel Miravet , Marek Korkusinski , Pawel Hawrylak

Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but…

Gate-tunable quantum-mechanical tunnelling of particles between a quantum confined state and a nearby Fermi reservoir of delocalized states has underpinned many advances in spintronics and solid-state quantum optics. The prototypical…

Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain…

The small size and excellent integrability of silicon metal-oxide-semiconductor (SiMOS) quantum dot spin qubits make them an attractive system for mass-manufacturable, scaled-up quantum processors. Furthermore, classical control electronics…

Quantum dots are considered building blocks for future quantum information circuits. We present here experimental results on a quantum dot circuit consisting of three quantum dots with controlled electron numbers down to one per dot and…

Highly polarized nuclear spins within a semiconductor quantum dot (QD) induce effective magnetic (Overhauser) fields of up to several Tesla acting on the electron spin or up to a few hundred mT for the hole spin. Recently this has been…

介观与纳米尺度物理 · 物理学 2011-11-04 M. N. Makhonin , K. V. Kavokin , P. Senellart , A. Lema^itre , A. J. Ramsay , M. S. Skolnick , A. I. Tartakovskii

Spin qubits are considered to be among the most promising candidates for building a quantum processor. GroupIV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In…

A quantum dot hybrid qubit formed from three electrons in a double quantum dot has the potential for great speed, due to presence of level crossings where the qubit becomes charge-like. Here, we show how to take full advantage of the level…

量子物理 · 物理学 2013-08-26 Teck Seng Koh , John King Gamble , Mark Friesen , M. A. Eriksson , S. N. Coppersmith

We consider a quantum dot embedded in a three-dimensional nanowire with tunable aspect ratio a. A configuration interaction theory is developed to calculate the energy spectra of the finite 1D quantum dot systems charged with two electrons…

介观与纳米尺度物理 · 物理学 2015-05-14 Y. T. Chen , C. C. Chao , S. Y. Huang , C. S. Tang , S. J. Cheng