相关论文: Ultra-Fast Ferrimagnetic All Spin Logic Device

Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a…

Several rare-earth transition-metal ferrimagnetic systems exhibit all-optical magnetization switching upon excitation with a femtosecond laser pulse. Although this phenomenon is very promising for future opto-magnetic data storage…

Femtosecond laser control of antiferromagnetic order is a cornerstone for future memory and logic devices operating at terahertz clock rates. The advent of altermagnets -- antiferromagnets with unconventional spin-group symmetries --…

Unlocking the spin degree of freedom in addition to the electron's charge, spin-based logic offers an in-memory computing architecture beyond-CMOS technology. Here, we encode information into chiral spin textures (e.g., chiral domain-wall…

Antiferromagnets are outstanding candidates for the next generation of spintronic applications, with great potential for downscaling and decreasing power consumption. Recently, the manipulation of bulk properties of antiferromagnets has…

Synthetic ferrimagnets are composite magnetic structures formed from two or more anti- ferromagnetically coupled magnetic sublattices with different magnetic moments. Here we report on atomistic spin simulations of the laser-induced…

In this paper we discuss the potential of emerging spintorque devices for computing applications. Recent proposals for spinbased computing schemes may be differentiated as all-spin vs. hybrid, programmable vs. fixed, and, Boolean vs.…

Electrically controllable non-volatile magnetic memories show great potential for the replacement of semiconductor-based technologies. Recently there has been strong interest in spin-orbit torque (SOT) induced magnetization reversal due to…

Spin-flop transition (SFT) consists in a jump-like reversal of antiferromagnetic magnetic moments into a non-collinear state when the magnetic field increases above the critical value. Potentially the SFT can be utilized in many…

Spintronic devices as alternatives to traditional semiconductor-based electronic devices attract considerable interest as they offer zero quiescent power, built-in memory, scalability, and reconfigurability. To realize spintronic logic…

Neuromorphic computing, which seeks to replicate the brain's ability to process information, has garnered significant attention due to its potential to achieve brain-like computing efficiency and human cognitive intelligence. Spin-orbit…

In recent years, there has been a growing interest in spin-orbit torques (SOTs) for manipulating the magnetization in nonvolatile magnetic memory devices. SOTs rely on the spin-orbit coupling of a nonmagnetic material coupled to a…

The technique of conventional ferromagnet/heavy-metal spin-orbit torque (SOT) offers significant potential for enhancing the efficiency of magnetic memories. However, it faces fundamental physical limitations, including hunting effects from…

As nanoelectronics approaches the nanometer scale, a massive effort is underway to identify the next scalable logic technology beyond Complementary Metal Oxide Semiconductor (CMOS) computing. Such computing technology needs to improve…

In the quest for novel, scalable and energy-efficient computing technologies, many non-charge based logic devices are being explored. Recent advances in multi-ferroic materials have paved the way for electric field induced low energy and…

Irradiating solids with ultrashort laser pulses is known to initiate femtosecond timescale magnetization dynamics. However, sub-femtosecond spin dynamics have not yet been observed or predicted. Here, we explore ultrafast light-driven spin…

Non-Boolean computing based on emerging post-CMOS technologies can potentially pave the way for low-power neural computing platforms. However, existing work on such emerging neuromorphic architectures have either focused on solely mimicking…

Using type-x spin-orbit torque (SOT) switching scheme, in which the easy axis (EA) of the ferromagnetic (FM) layer and the charge current flow direction are collinear, is possible to realize a lower-power-consumption, higher-density, and…

Spin-orbit torque (SOT) represents an energy efficient method to control magnetization in magnetic memory devices. However, deterministically switching perpendicular memory bits usually requires the application of an additional bias field…

Efficient manipulation of the N\'eel vector in antiferromagnets can be induced by generation of spin orbit (SOT) or spin-transfer (STT) torques. Here we predict another possibility for antiferromagnetic domain switching by using a non-zero…