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The sensitivity of ferroelectric domain walls to external stimuli makes them functional entities in nanoelectronic devices. Specifically, optically driven domain reconfiguration with in-plane polarization is advantageous and thus highly…

Interface physics in oxide heterostructures is pivotal in material's science. Domain walls (DWs) in ferroic systems are examples of naturally occurring interfaces, where order parameter of neighboring domains is modified and emerging…

Ferroelectric domain walls are nanoscale objects that can be created, positioned, and erased on demand. They often embody functional properties that are distinct from the surrounding bulk material. Enhanced conductivity, for instance, is…

材料科学 · 物理学 2024-10-29 Elzbieta Gradauskaite , Chia-Jung Yang , Shovon Pal , Manfred Fiebig , Morgan Trassin

Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has…

材料科学 · 物理学 2012-02-14 Tuomas H. E. Lahtinen , Kévin J. A. Franke , Sebastiaan van Dijken

Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…

材料科学 · 物理学 2025-12-24 Hao-Wen Xu , Wen-Cheng Fan , Jun-Ding Zheng , Cheng-Shi Yao , Ni Zhong , Wen-Yi Tong , Chun-Gang Duan

Ferroelectrics are technologically important, with wide application in micromechanical systems, nonlinear optics, and information storage. Recent discoveries of exotic polarisation textures in these materials, which can strongly influence…

We study ferroelectric domain walls in barium titanate. We search for structurally nontrivial, so-called non-Ising domain walls, where the Polarisation is non-zero along the entire wall. Our approach enables us to find solutions for domain…

材料科学 · 物理学 2023-04-26 Chris Halcrow , Egor Babaev

Ferroelastic materials (materials with switchable spontaneous strain) often are centrosymmetric, but their domain walls are always polar, as their internal strain gradients cause polarization via flexoelectricity. This polarization is…

材料科学 · 物理学 2025-03-11 Guangming Lu , Gustau Catalan , Ekhard K. H. Salje

Deterministic polarization reversal in ferroelectric and multiferroic films is critical for their exploitation in nanoelectronic devices. While ferroelectricity has been studied for nearly a century, major discrepancies in the reported…

Interfaces at the two-dimensional limit in oxide materials exhibit a rich span of functionality that differs significantly from the bulk behavior. Among such interfaces, domain walls in ferroelectrics draw special attention because they can…

材料科学 · 物理学 2020-02-19 Maya Barzilay , Yachin Ivry

Ferroelectrics have a spontaneous electrical polarization that is arranged into domains and can be reversed by an externally applied field. This high versatility makes them useful in enabling components such as capacitors, sensors, and…

材料科学 · 物理学 2025-10-29 J. Schultheiß , G. Picht , J. Wang , Y. A. Genenko , L. Q. Chen , J. E. Daniels , J. Koruza

Among the recent discoveries of domain wall functionalities, the observation of electrical conduction at ferroelectric domain walls in the multiferroic insulator BiFeO3 has opened exciting new possibilities. Here, we report evidence of…

材料科学 · 物理学 2012-05-02 J. Guyonnet , I. Gaponenko , S. Gariglio , P. Paruch

The switching of electric polarization induced by electric fields -a fundamental functionality of ferroelectrics- is closely associated with the motions of the domain walls that separate regions with distinct polarization directions.…

材料科学 · 物理学 2014-01-10 F. Kagawa , S. Horiuchi , N. Minami , S. Ishibashi , K. Kobayashi , R. Kumai , Y. Murakami , Y. Tokura

Domain walls in ferroelectric oxides provide fertile ground for the development of next-generation nanotechnology. Examples include domain-wall-based memory, memristors, and diodes, where the unusual electronic properties and the quasi-2D…

Micrometric domains of precise ferroelectric polarization have been written into a 20 nm thick epitaxial thin film of BaTiO3(001) (BTO) on a Nb doped SrTiO3 (STO) substrate using PiezoForce Microscopy (PFM). The domain dependent electronic…

材料科学 · 物理学 2018-06-06 N. Barrett , J. Rault , I. Krug , B. Vilquin , G. Niu , B. Gautier , D. Albertini , O. Renault

Ferroic materials (ferromagnetic, ferroelectric, ferroelastic) usually divide into domains with different orientations of their order parameter. Coupling different ferroic systems creates new functionalities, for instance the electrical…

Despite multiple efforts, there exist many unsolved fundamental problems related with detection and analysis of internal polarization structure and related phase transitions in ferroelectric domain walls. Their solution can be very…

Domain walls in ferroelectrics exhibit a plethora of phases and functionalities not found in the bulk. The interplay of electrostatic, chemical, topological, and distortive inhomogeneities at the walls can be so complex, however, that this…

介观与纳米尺度物理 · 物理学 2017-02-23 Gabriele De Luca , Marta D. Rossell , Jakob Schaab , Nathalie Viart , Manfred Fiebig , Morgan Trassin

The direct current (d.c.) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on the charge state, the walls can exhibit unusual d.c. conduction ranging…

材料科学 · 物理学 2021-12-08 J. Schultheiß , E. Lysne , L. Puntigam , J. Schaab , E. Bourret , Z. Yan , S. Krohns , D. Meier

Domain-wall dynamics in ferroelectric materials are strongly position-dependent since each polar interface is locked into a unique local microstructure. This necessitates spatially resolved studies of the wall-pinning using scanning-probe…

材料科学 · 物理学 2025-06-02 Kamyar Barakati , Yu Liu , Hiroshi Funakubo , Sergei V. Kalinin
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