相关论文: Oscillatory spin-orbit torque switching induced by…

This paper shows that the presence of two dynamical regimes, characterized by different precessional-axis, is the origin of the non-monotonic behavior of the output integrated power for large-amplitude magnetization precession driven by…

We investigated the possibilities of controlling the nonlinear frequency shift of the magnetization oscillations in a spin-transfer nanoscillator by varying the magnitude and direction of the bias magnetic field. We considered both…

Optical bistability of exciton polaritons in semiconductor microcavities is a promising platform for digital optical devices. Steady states of coherently driven polaritons can be toggled in tens of picoseconds by a short external pulse of…

Understanding the mechanism of spin switching in ferrimagnets via the excitation of THz pulses holds promise for future-generation magnetic memory devices. Such spin switching can be accomplished by the Zeeman torque exerted by the THz…

Picosecond switching of the staggered antiferromagnetic order is shown to be realizable through spin-transfer torques from a short current pulse. The coupled dynamics of sublattice magnetization is mapped onto a classical pendulum subject…

The discovery of current-induced spin-orbit torque (SOT) orthogonal reorientation, also known as orthogonal switching, of metallic Mn$_2$Au and CuMnAs has opened the door for ultrafast writing of an antiferromagnet (AFM). Phenomenological…

Spin Berry curvature characterizes the band topology as the spin counterpart of Berry curvature and is crucial in generating novel spintronics functionalities. By breaking the crystalline inversion symmetry, the spin Berry curvature is…

Transfer of angular momentum from a spin-polarized current to a ferromagnet provides an efficient means to control the dynamics of nanomagnets. A peculiar consequence of this spin-torque, the ability to induce persistent oscillations of a…

A semiconductor nanowire quantum dot with strong spin-orbit coupling (SOC) can be used to achieve a spin-orbit qubit. In contrast to a spin qubit, the spin-orbit qubit can respond to an external ac electric field, an effect called…

We study deterministic magnetic reversal of a perpendicularly magnetized Co layer in a Co/MgO/Ta nano-square driven by spin Hall torque from an in-plane current flowing in an underlying Pt layer. The rate-limiting step of the switching…

This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with highly B2-ordered…

Numerical calculations indicate that by suitably controlling the individual gate voltages of a capacitively coupled parallel double quantum dot, with each quantum dot coupled to one of two independent non-magnetic channels, this system can…

Topological insulators (TIs) are a promising class of materials for manipulating the magnetization of an adjacent ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, current studies combining TIs with conventional FMs…

Writing magnetic bits by spin-orbit torques (SOTs) arising from spin Hall effect creates new possibilities for ultrafast and low-power magnetoresistive random access memory (MRAM). For perpendicular MRAM, an extra in-plane field is required…

Altermagnets host intrinsically chirality-splitting spin waves, which offer an ideal platform for chirality-based computing with low energy consumption and fast dynamics. However, achieving precise and efficient control over spin-wave…

The capability of the spin-orbit torque (SOT) generated via phenomena such as the spin Hall effect in heavy metals, in switching the magnetization of an adjacent magnetic material, has been studied extensively over the last decade. The…

The ability of spintronic devices to utilize an electric current for manipulating the magnetization has resulted in large-scale developments, such as, magnetic random access memories and boosted the spintronic research area. In this regard,…

Spin- or orbital-selective behaviours in correlated electron materials offer rich promise for spintronics or orbitronics phenomena and applications deriving from them. Strong local electronic Coulomb correlations might lead to an…

Current-induced magnetization switching, a fundamental phenomenon related to spin-transport of electrons, enables non-voltaic and fast information write, facilitating applications in low-power memory and logic devices. However,…

Exploring novel strategies to manipulate the order parameter of magnetic materials by electrical means is of great importance, not only for advancing our understanding of fundamental magnetism, but also for unlocking potential practical…