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Micrometric domains of precise ferroelectric polarization have been written into a 20 nm thick epitaxial thin film of BaTiO3(001) (BTO) on a Nb doped SrTiO3 (STO) substrate using PiezoForce Microscopy (PFM). The domain dependent electronic…

材料科学 · 物理学 2018-06-06 N. Barrett , J. Rault , I. Krug , B. Vilquin , G. Niu , B. Gautier , D. Albertini , O. Renault

An unexplored physical mechanism which produces a magnetoelectric effect in ferroelectric/ferromagnetic multilayers is studied based on first-principles calculations. Its origin is a change in bonding at the ferroelectric/ferromagnet…

材料科学 · 物理学 2015-06-25 Chun-Gang Duan , Sitaram S. Jaswal , Evgeny Y. Tsymbal

Against expectations, robust switchable ferroelectricity has been recently observed in ultrathin (1 nm) ferroelectric films exposed to air [V. Garcia $et$ $al.$, Nature {\bf 460}, 81 (2009)]. Based on first-principles calculations, we show…

介观与纳米尺度物理 · 物理学 2012-01-10 N. C. Bristowe , Massimiliano Stengel , P. B. Littlewood , J. M. Pruneda , Emilio Artacho

Flat elastic sheets tend to display wrinkles and folds. From pieces of clothing down to two-dimensional crystals, these corrugations appear in response to strain generated by sheet compression or stretching, thermal or mechanical mismatch…

Multiferroic materials, characterized by the coexistence of ferroelectricity and ferromagnetism, may unveil band structures suggestive of complex phenomena and new functionalities. In this Letter, we analyze the band structure of EuO in its…

Layered indium selenides ($In_{2}Se_{3}$) have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the $\alpha$ and $\beta$' phases, respectively. In this work, we utilise angle-resolved photoelectron…

The integration of ferroelectric and topological materials offers a promising avenue for advancing the development of quantum material devices. In this work, we explore the strong coupling between topological states and ferroelectricity in…

材料科学 · 物理学 2025-12-17 Jiaheng Li , Quansheng Wu , Hongming Weng

We propose energy band engineering to enhance tunneling electroresistance (TER) in ferroelectric tunnel junctions (FTJs). We predict that an ultrathin dielectric layer with a smaller band gap, embedded into a ferroelectric barrier layer,…

材料科学 · 物理学 2021-08-18 Jing Su , Xingwen Zheng , Zheng Wen , Tao Li , Shijie Xie , Karin M. Rabe , Xiaohui Liu , Evgeny Y. Tsymbal

First-principles calculations were performed to investigate the ferroelectric properties of barium titanate and bismuth ferrite, as well as phonon dispersion of BaTiO3, using density functional theory and density functional perturbation…

材料科学 · 物理学 2014-12-08 Hong-Jian Feng

The effective barrier height between an electrode and a ferroelectric (FE) depends on both macroscopic electrical properties and microscopic chemical and electronic structure. The behavior of a prototypical electrode/FE/electrode structure,…

Floating edge bands (FEB) have been identified in systems such as obstructed atomic insulators and layered nonsymmorphic semimetals, attracting considerable interest recently. Here we demonstrate that FEB can arise in a simplified model…

介观与纳米尺度物理 · 物理学 2025-01-14 Yang-Yang Li , Song-Bo Zhang

We study the effect of circularly polarized electromagnetic radiation on optical polarons in monolayer \b{eta}-borophene. We focus on the off-resonant regime of large driving frequencies, which allows to set up an effectively…

材料科学 · 物理学 2022-07-26 D. Akay , J. Schliemann

Stable and switchable polarization of ferroelectric materials opens a possibility to electrically control their functional behavior. A particularly promising approach is to employ ferroelectric tunnel junctions where the polarization…

The direction of ferroelectric polarization is prescribed by the symmetry of the crystal structure. Therefore, rotation of the polarization direction is largely limited, despite the opportunity it offers in understanding important…

For $\rm Sn_2P_2S_6$ ferroelectrics by first-principles calculations an analysis of the $\rm P_2S_6$ cluster electronic structure and their comparison with crystal valence band in paraelectric and ferroelectric phases has been done and the…

材料科学 · 物理学 2015-03-19 Konstantin Glukhov , Kristina Fedyo , Yulian Vysochanskii

The polarization properties of a magnetophotonic crystal at the frequencies located in the vicinity of ferromagnetic resonance are studied. The investigations are curried out taking into consideration the fact that the magnitude of material…

光学 · 物理学 2010-11-17 Vladimir R. Tuz , Mikhail Yu. Vidil , Sergey L. Prosvirnin

The electronic band structure of bulk ferromagnetic iron is explored by angle-resolved photoemission for electron correlation effects. Fermi surface cross-sections as well as band maps are contrasted with density functional calculations.…

强关联电子 · 物理学 2015-06-24 J. Schaefer , M. Hoinkis , Eli Rotenberg , P. Blaha , R. Claessen

My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…

材料科学 · 物理学 2020-11-17 Vincent Garcia

The accurate theoretical description of the underlying electronic structures is essential for understanding the superconducting mechanism of iron-based superconductors. Compared to bulk FeSe, the superconducting single-layer FeSe/SrTiO3…

The crystal structure of BiFeO3/BaxSr1-xTiO3 (BFO/BST) heterostructures with x = 0.2, 0.6 and 0.8, grown on single-crystal MgO (001) substrate was investigated by x-ray diffraction and Raman spectroscopy in order to determine the influence…

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