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相关论文: Deterministic switching of perpendicularly magneti…

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We proposed a novel and simple multilayer structure to realize the deterministic switching of perpendicularly magnetized layers (Co in our work) by spin orbital torque from the spin Hall Effect in this paper. A pinned layer is introduced,…

计算物理 · 物理学 2017-05-08 Sumei Wang

We propose a magnetization reversal model to explain the perpendicular switching of a single ferromagnetic layer induced by an in-plane current. Contrary to previously proposed reversal mechanisms that such magnetic switching is directly…

介观与纳米尺度物理 · 物理学 2017-01-11 Chong Bi , Ming Liu

All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for the aim of high integration and low energy consumption in modern information technology. Methods based on the spin-orbit torque switching in heavy…

The lack of certain crystalline symmetries in strong spin-orbit-coupled non-magnetic materials allows for the existence of uncoventional spin Hall responses, with electrically generated transverse spin currents possessing collinear flow and…

介观与纳米尺度物理 · 物理学 2022-11-01 D. J. P. de Sousa , P. M. Haney , J. P. Wang , Tony Low

The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…

We study deterministic magnetic reversal of a perpendicularly magnetized Co layer in a Co/MgO/Ta nano-square driven by spin Hall torque from an in-plane current flowing in an underlying Pt layer. The rate-limiting step of the switching…

介观与纳米尺度物理 · 物理学 2015-06-18 O. J. Lee , L. Q. Liu , C. F. Pai , H. W. Tseng , Y. Li , D. C. Ralph , R. A. Buhrman

Electrical current-induced deterministic magnetization switching in a magnetic multilayer structure without external magnetic field is realized by utilizing interlayer exchange coupling. Two ferromagnetic Co layers, with in-plane and…

材料科学 · 物理学 2018-04-04 Yu Sheng , Kevin William Edmonds , Xingqiao Ma , Houzhi Zheng , Kaiyou Wang

We theoretically investigate the switching of a perpendicular magnetic layer by in-plane charge current due to the spin Hall effect. We find that, in the high damping regime, the threshold switching current is independent of the damping…

介观与纳米尺度物理 · 物理学 2015-06-11 Ki-Seung Lee , Seo-Won Lee , Byoung-Chul Min , Kyung-Jin Lee

In ferromagnetic trilayers, a spin-orbit-induced spin current can have a spin polarization of which direction is deviated from that for the spin Hall effect. Recently, magnetization switching in ferromagnetic trilayers has been proposed and…

材料科学 · 物理学 2020-02-07 Dong-Kyu Lee , Kyung-Jin Lee

Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires…

Current induced spin-orbit torques driven by the conventional spin Hall effect are widely used to manipulate the magnetization. This approach, however, is nondeterministic and inefficient for the switching of magnets with perpendicular…

Spin-orbit torques, which utilize spin currents arising from the spin-orbit coupling, offer a novel method to electrically switch the magnetization with perpendicular anisotropy. However, the necessity of an external magnetic field to…

材料科学 · 物理学 2018-07-18 Jong Min Lee , Kaiming Cai , Guang Yang , Yang Liu , Rajagopalan Ramaswamy , Pan He , Hyunsoo Yang

Perpendicular switching of a ferromagnet induced by spin torques is crucial for building high density spin-based memory and logic devices, where out-of-plane spin polarization ($\sigma_z$) has become a long sought-after goal for…

应用物理 · 物理学 2025-09-01 Baiqing Jiang , Ziqian Cui , Hanying Zhang , Yuan Wang , C. Bi

Spin Hall effect (SHE) induced reversal of perpendicular magnetization has attracted significant interest, due to its potential to lead to low power memory and logic devices. However, the switching requires an assisted in-plane magnetic…

材料科学 · 物理学 2017-10-11 Zhengyang Zhao , Angeline Klemm Smith , Mahdi Jamali , Jian-Ping Wang

It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the…

介观与纳米尺度物理 · 物理学 2020-04-16 Yan-Ting Liu , Tian-Yue Chen , Tzu-Hsiang Lo , Tsung-Yu Tsai , Shan-Yi Yang , Yao-Jen Chang , Jeng-Hua Wei , Chi-Feng Pai

In a ferromagnet/heavy-metal bilayer device with strong spin Hall effect an in-plane current excites magnetic dynamics through spin torque. We analyze bilayers with perpendicular magnetization and calculate three-dimensional phase diagrams…

介观与纳米尺度物理 · 物理学 2015-06-24 Shu Yan , Ya. B. Bazaliy

Engineering and controlling heat and spin transport on the femtosecond time-scale in spintronic devices opens up new ways to manipulate magnetization with unprecedented speed. Yet the underlying reversal mechanisms remain poorly understood…

介观与纳米尺度物理 · 物理学 2026-02-04 Harjinder Singh , Alberto Anadón , Junta Igarashi , Quentin Remy , Stéphane Mangin , Michel Hehn , Jon Gorchon , Gregory Malinowski

Despite recent advances in orbitronics, generating out-of-plane orbital torques essential for field-free deterministic switching of perpendicular magnetization remains a key challenge. Here, we propose a strategy to produce such…

材料科学 · 物理学 2025-11-14 Hui Wang , Xukun Feng , Jin Cao , Huiying Liu , Weibo Gao , Cong Xiao , Shengyuan A. Yang , Lay Kee Ang

In this work, we study magnetization switching induced by spin-orbit torque in W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layers W and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiO layer.…

Spin-orbit torque-induced perpendicular magnetization switching has attracted much attention due to the advantages of nonvolatility, high density, infinite read/write counts, and low power consumption in spintronic applications. To achieve…

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