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Antiferromagnets are magnetically ordered materials which exhibit no net moment and thus are insensitive to magnetic fields. Antiferromagnetic spintronics aims to take advantage of this insensitivity for enhanced stability, while at the…

Control and detection of spin order in ferromagnets is the main principle allowing storing and reading of magnetic information in nowadays technology. The large class of antiferromagnets, on the other hand, is less utilized, despite its…

材料科学 · 物理学 2019-09-23 P. Nemec , M. Fiebig , T. Kampfrath , A. V. Kimel

Antiferromagnetic materials are magnetic inside, however, the direction of their ordered microscopic moments alternates between individual atomic sites. The resulting zero net magnetic moment makes magnetism in antiferromagnets invisible on…

材料科学 · 物理学 2016-03-23 T. Jungwirth , X. Marti , P. Wadley , J. Wunderlich

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets that represent the more common form of magnetically ordered materials, have so far found less practical application beyond their use for…

介观与纳米尺度物理 · 物理学 2017-05-31 J. Železný , P. Wadley , K. Olejník. A. Hoffmann , H. Ohno

Antiferromagnetic spintronics is an emerging research field whose focus is on the electrical and optical control of the antiferromagnetic order parameter and its utility in information technology devices. An example of recently discovered…

介观与纳米尺度物理 · 物理学 2017-05-24 O. Gomonay , T. Jungwirth , J. Sinova

Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display…

材料科学 · 物理学 2018-02-20 V. Baltz , A. Manchon , M. Tsoi , T. Moriyama , T. Ono , Y. Tserkovnyak

NiO is a prototypical antiferromagnet with a characteristic resonance frequency in the THz range. From atomistic spin dynamics simulations that take into account the crystallographic structure of NiO, and in particular a magnetic anisotropy…

As a candidate material for applications such as magnetic memory, polycrystalline antiferromagnets offer the same robustness to external magnetic fields, THz spin dynamics, and lack of stray field as their single crystalline counterparts,…

In the past five years, most of the paradigmatic concepts employed in spintronics have been replicated substituting ferromagnets by antiferromagnets in critical parts of the devices. The numerous research efforts directed to manipulate and…

材料科学 · 物理学 2016-10-19 I. Fina , X. Marti

Antiferromagnetic materials, which have drawn considerable attention recently, have fascinating features: they are robust against perturbation, produce no stray fields, and exhibit ultrafast dynamics. Discerning how to efficiently…

材料科学 · 物理学 2018-03-14 Cheng Song , Yunfeng You , Xianzhe Chen , Xiaofeng Zhou , Yuyan Wang , Feng Pan

Antiferromagnets have large potential for ultrafast coherent switching of magnetic order with minimum heat dissipation. In novel materials such as Mn$_2$Au and CuMnAs, electric rather than magnetic fields may control antiferromagnetic order…

The electrical switching of antiferromagnet (AFM) is very important for the development of ultrafast magnetic random-access memory (MRAM). This task becomes more difficult in antiferromagnetic oxide NiO which has complex anisotropy. We show…

介观与纳米尺度物理 · 物理学 2024-11-13 Yixiao Qiao , Zhengde Xu , Zhuo Xu , Yumeng Yang , Zhifeng Zhu

Although the development of spintronic devices has advanced significantly over the past decade with the use of ferromagnetic materials, the extensive implementation of such devices has been limited by the notable drawbacks of these…

材料科学 · 物理学 2022-11-04 Kang Wang , Vineetha Bheemarasetty , Junhang Duan , Shiyu Zhou , Gang Xiao

Spintronics uses spins, the intrinsic angular momentum of electrons, as an alternative for the electron charge. Its long-term goal is in the development of beyond-Moore low dissipation technology devices. Recent progress demonstrated the…

介观与纳米尺度物理 · 物理学 2018-09-14 R. Lebrun , A. Ross , S. A. Bender , A. Qaiumzadeh , L. Baldrati , J. Cramer , A. Brataas , R. A. Duine , M. Kläui

Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory device applications: insensitivity to external magnetic fields, much faster spin dynamics (~THz) and higher packing density due to the absence of any…

介观与纳米尺度物理 · 物理学 2019-03-15 Zhiqi Liu , Zexin Feng , Han Yan , Xiaoning Wang , Xiaorong Zhou , Peixin Qin , Huixin Guo , Ronghai Yu , Chengbao Jiang

Spintronics is a field of electronics based on using the electron spin instead of its charge. The recent advance in the manipulation of pure spin currents, i.e. angular momentum transfer not associated to conventional charge currents, has…

As electrical control of N\'eel order opens the door to reliable antiferromagnetic spintronic devices, understanding the microscopic mechanisms of antiferromagnetic switching is crucial. Spatially-resolved studies are necessary to…

We consider magnetostriction in magnetic materials. Starting from a microscopic lattice model of the magneto-elastic coupling, we derive the continuum magnetostriction Hamiltonian in cubic ferromagnets and antiferromagnets. In ferromagnets,…

介观与纳米尺度物理 · 物理学 2018-10-04 Haakon T. Simensen , Roberto E. Troncoso , Arne Brataas

Spintronics, since its inception, has mainly focused on ferromagnetic materials for manipulating the spin degree of freedom in addition to the charge degree of freedom, whereas much less attention has been paid to antiferromagnetic…

介观与纳米尺度物理 · 物理学 2021-01-07 H. Y. Yuan , Zhe Yuan , Rembert A. Duine , X. R. Wang

We report on spin Hall magnetoresistance (SMR) measurements of Pt Hall bars on the antiferromagnetic NiO(111) single crystal. An SMR with a sign opposite of conventional SMR is observed over a wide range of temperatures as well as magnetic…

介观与纳米尺度物理 · 物理学 2017-08-08 Geert R. Hoogeboom , Aisha Aqeel , Timo Kuschel , Thomas T. M. Palstra , Bart J. van Wees
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