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相关论文: Charge transfer driven emergent phenomena in oxide…

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Transition metal oxides hold great potential for the development of new device paradigms because of the field-tunable functionalities driven by their strong electronic correlations, combined with their earth abundance and environmental…

Recent advances in experimental and computational techniques have allowed for an accurate description of the adsorption of ionic liquids on metallic electrodes. It is now well established that they adopt a multi-layered structure, and that…

材料科学 · 物理学 2016-03-15 Benjamin Rotenberg , Mathieu Salanne

A wide variety of experimental results and theoretical investigations in recent years have convincingly demonstrated that several transition metal oxides and other materials, have dominant states that are not spatially homogeneous. This…

强关联电子 · 物理学 2009-11-11 Elbio Dagotto

Charge transfer is of particular importance in manipulating the interface physics in transition-metal oxide heterostructures. In this work, we have fabricated epitaxial bilayers composed of polar 3d LaMnO3 and nonpolar 5d SrIrO3. Systematic…

介观与纳米尺度物理 · 物理学 2019-04-12 Tao Yu , Bei Deng , Liang Zhou , Pingbo Chen , Qiying Liu , Xingkun Ning , Jingtian Zhou , Zhiping Bian , Zhenlin Luo , Chunyin Qiu , Xingqing Shi , Hongtao He

Energy and charge transfer across metal-semiconductor interfaces are the fundamental driving forces for a broad range of applications, such as computing, energy harvesting, and photodetection. However, the exact roles and physical…

Despite widespread interest, a detailed understanding of the dynamics of proton transfer at interfaces is lacking. Here we use ab initio molecular dynamics to unravel the connection between interfacial water structure and proton transfer…

材料科学 · 物理学 2014-03-12 Gabriele Tocci , Angelos Michaelides

A microscopic model Hamiltonian for the ferroelectric field effect is introduced for the study of oxide heterostructures with ferroelectric components. The long-range Coulomb interaction is incorporated as an electrostatic potential, solved…

材料科学 · 物理学 2011-10-25 Shuai Dong , Xiaotian Zhang , Rong Yu , J. -M. Liu , Elbio Dagotto

We investigate the spin-dependent transport properties of a two-dimensional electron gas formed at oxides' interface in the presence of a magnetic field. We consider several scenarios for the oxides' properties, including oxides with…

介观与纳米尺度物理 · 物理学 2015-05-20 Chenglong Jia , Jamal Berakdar

We use density functional theory plus dynamical mean-field theory to demonstrate the emergence of a metallic layer at the interface between the two Mott insulators LaTiO$_3$ and LaVO$_3$. The metallic layer is due to charge transfer across…

强关联电子 · 物理学 2019-09-11 Sophie Beck , Claude Ederer

We have employed x-ray spectroscopy to probe the charge changing process only in the bulk of the foil when swift heavy ions pass through it. In contrast, the electromagnetic methods take into account integral effect of the charge changing…

原子物理 · 物理学 2019-05-14 Tapan Nandi , Prashant Sharma , Pravin Kumar

We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact…

强关联电子 · 物理学 2009-11-13 A. Ruotolo , C. W. Leung , C. Y. Lam , W. F. Cheng , K. H. Wong , G. P. Pepe

We describe quantum phase transitions in superconducting complex oxides which could be tuned by electrostatic charge transfer. Using a simple model for the superconductivity of a thin film or surface of a bulk copper oxide, we show that…

超导电性 · 物理学 2009-08-17 Li Han , C. A. R. Sá de Melo

We introduce a model to explain the observed ferromagnetism and superconductivity in LAO/STO oxide interface structures. Due to the polar catastrophe mechanism, 1/2 charge per unit cell is transferred to the interface layer. We argue that…

超导电性 · 物理学 2012-03-14 Karen Michaeli , Andrew C. Potter , Patrick A Lee

Charge disproportionation transitions in complex oxides most commonly link high-temperature phases containing identical cations with the same oxidation state and crystallographic site, to low-temperature phases in which charge transfer…

材料科学 · 物理学 2019-01-09 Ulrich Aschauer , Nathalie Vonrüti , Nicola A. Spaldin

Transition metal oxides (TMOs) exhibit many emergent phenomena ranging from high-temperature superconductivity and giant magnetoresistance to magnetism and ferroelectricity. In addition, when TMOs are interfaced with each other, new…

强关联电子 · 物理学 2014-07-04 Jian-Xin Zhu , Xiao-Dong Wen , J. T. Haraldsen , Mi He , C. Panagopoulos , Elbert E. M. Chia

Transition-metal oxides have been a central subject of condensed matter physics for decades. In addition to novel electronic states driven by the influence of strong correlation, relativistic spin-orbit coupling effects have recently…

材料科学 · 物理学 2025-05-22 Satoshi Okamoto , Narayan Mohanta , Ho Nyung Lee , Adriana Moreo , Elbio Dagotto

Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich…

We estimate rate coefficients for charge transfer between neutral hydrogen and helium and moderate to highly ionized heavy elements. Although charge transfer does not have much influence on hot collisionally ionized plasmas, its effects on…

天体物理学 · 物理学 2009-10-30 G. J. Ferland , K. T. Korista , D. A. Verner , A. Dalgarno

The synthesis of transition metal heterostructures is currently one of the most vivid fields in the design of novel functional materials. In this paper we propose a simple scheme to predict \emph{band alignment }and \emph{charge transfer}…

材料科学 · 物理学 2017-03-07 Zhicheng Zhong , Philipp Hansmann

Photo-induced charge transfer of positive and negative charges across the interface between an ordered organic semiconductor and a polymeric insulator is observed in the field-effect experiments. Immobilization of the transferred charge in…

材料科学 · 物理学 2009-11-10 V. Podzorov , M. E. Gershenson