相关论文: On the impact ionization rate in direct gap semico…
Although the direct or indirect nature of the bandgap transition is an essential parameter of semiconductors for optoelectronic applications, the understanding why some of the conventional semiconductors have direct or indirect bandgaps…
A finite transfer integral $t_a$ orthogonal to the conducting chains of a highly one-dimensional metal gives rise to empty and filled bands that simulate an indirect-gap semiconductor upon formation of a commensurate charge-density-wave…
We study the electron-impact induced ionization of O$_{2}$ from threshold to 120 eV using the electron spectroscopy method. Our approach is simple in concept and embodies the ion source with a collision chamber and a mass spectrometer with…
Electron-impact ionization of an atom or ion in the presence of a neighboring atom is studied. The latter is first collisionally excited by the incident electron, whose energy is assumed to be high but nonrelativistic. Afterwards, the…
This study investigates the ionization and excitation processes induced by electron impact between two configurations or superconfigurations. Rate coefficients are calculated for transition arrays or super-transition arrays rather than…
The temperature dependence of the band gap of semiconducting single-wall carbon nanotubes (SWNTs) is calculated by direct evaluation of electron-phonon couplings within a ``frozen-phonon'' scheme. An interesting diameter and chirality…
Absolute cross sections for electron-impact single ionisation (EISI) of multiply charged tungsten ions (W$^{q+}$) with charge states in the range $ 11 \leq q \leq 18$ in the electron-ion collision energy ranges from below the respective…
Analysis of edge-state energies in the integer quantum Hall effect is carried out within the semiclassical approximation. When the system is wide so that each edge can be considered separatly, this problem is equivalent to that of a one…
Using two-dimensional THz spectroscopy in combination with numerical models, we investigate the dynamics linked to carrier multiplication caused by high-field THz excitation of the low-gap semiconductor InSb. In addition to previously…
We present an analytical theory for impact ionization fronts in reversely biased p^{+}-n-n^{+} structures. The front propagates into a depleted n base with a velocity that exceeds the saturated drift velocity. The front passage generates a…
We develop a temperature dependent empirical pseudopotential theory to study the electronic and optical properties of self-assembled quantum dots (QDs) at finite temperature. The theory takes the effects of both lattice expansion and…
In this work, we discuss the results of the direct solution of the Eliashberg equations with finite bandwidth, in the cases of s- and d-wave symmetry for the pair wave function and in the presence of scattering from impurities. We show that…
A one parameter expression for the single ionization cross-section of atoms by electron impact is presented. Using this expression, the agreement obtained with available experimental data for 45 elements (from ionization threshold up to 200…
We present a semi-relativistic model for the description of the ionization process of atomic hydrogen by electron impact in the first Born approximation by using the Darwin wave function to describe the bound state of atomic hydrogen and…
The atomic and electronic structure of a set of pristine single wall SiC nanotubes as well as Si-substituted carbon nanotubes and a SiC sheet was studied by the LDA plane wave band structure calculations. Consecutive substitution of carbon…
We studied iron-based superconductors of various families with critical temperatures covering almost all range $T_C = 9 - 53$ K. In natural arrays of contacts formed in these materials we observed intrinsic multiple Andreev reflections…
We propose a novel type of ionization front in layered semiconductor structures. The propagation is due to the interplay of band-to-band tunneling and impact ionization. Our numerical simulations show that the front can be triggered when an…
The effect of a constant electric field on two-photon absorption in a direct band gap semiconductor is calculated using an independent-particle theory. Two band structure models for GaAs are used: a two-band parabolic model and an…
We have studied the electronic structure of InN and GaN employing G0W0 calculations based on exact-exchange density-functional theory. For InN our approach predicts a gap of 0.7 eV. Taking the Burnstein-Moss effect into account, the…
In this work, we investigate the photoionization cross-section of an electron confined in a quantum dot, considering the position-dependent variation of the effective mass through the parameter $\gamma$. We used a theoretical model based on…