相关论文: Time-Resolved Studies of the Spin-Transfer Reversa…
We present a computationally efficient strategy that allows to simulate magnetization switching driven by spin-transfer torque in magnetic tunnel junctions within a micromagnetic model coupled with a matrix-based non-equilibrium Green's…
Temperature plays an important role in spin torque switching of magnetic tunnel junctions causing magnetization fluctuations that decrease the switching voltage but also introduce switching errors. Here we present a systematic study of the…
We numerically study ultra fast resonant spin torque (ST) magnetization reversal in magnetic tunnelling junctions (MTJ) driven by current pulses having a direct current (DC) and a resonant alternating current (AC) component. The…
We study the precessional switching of the magnetization in microscopic spin valve cells induced by ultra short in-plane hard axis magnetic field pulses. Stable and highly efficient switching is monitored following pulses as short as 140 ps…
We describe time-domain measurements which provide new information about the large-angle nonlinear dynamics of nanomagnets excited by spin-transfer torque from a spin-polarized current. Sampling-oscilloscope measurements, which average over…
The spin-transfer effect has been studied in magnetic tunnel junctions (PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe) with dimensions down to 0.1x0.2 um2 and resistance-area product RA in the range of 0.5-10 Ohm m2 (dR/R=1-20%). Current-induced…
Theoretical investigations of spin transfer torque in magnetic tunnel junctions using the tight-binding model in the framework of non-equilibrium Green functions formalism are presented. We show that the behavior of the spin transfer torque…
Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an…
We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both…
We investigate the dependence of switching current density on the junction sizes in the spin transfer torque nanopillar structures by using micromagnetic simulations. While the macro spin model predicts weak dependence of switching current…
The reversal of the magnetization under the influence of a field pulse has been previously predicted to be an incoherent process with several competing phenomena such as domain wall relaxation, spin wave-mediated instability regions, and…
Spin valve nanopillars are reversed via the mechanism of spin momentum transfer using current pulses applied perpendicular to the film plane of the device. The applied pulses were varied in amplitude from 1.8 mA to 7.8 mA, and varied in…
We study the incubation and transition times that characterize the magnetization switching induced by spin-orbit torques in nanomagnets with perpendicular anisotropy. We present a phenomenological model to interpret the dependence of the…
Voltage-driven spin transfer torque in a magnetic tunnel junction comprising magnetic insulating electrodes is studied theoretically. In contrast with the conventional magnetic tunnel junctions comprising transition metal ferromagnets, the…
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a…
We demonstrate that thermally stable perpendicular magnetic tunnel junctions (pMTJs), widely used in spin-transfer torque magnetic random-access memory, can be actuated with nanosecond pulses to exhibit tunable stochastic behavior. This…
Micromagnetic instabilities and non-uniform magnetization states play a significant role in spin transfer induced switching of nanometer scale magnetic elements. Here we model domain wall mediated switching dynamics in perpendicularly…
We demonstrate the reduction of critical spin-transfer torque (STT) switching currents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) with perpendicular magnetization anisotropy (PMA). The junctions yield tunnel magnetoresistance…
This chapter presents a review on spin transfer torque in magnetic tunnel junctions. In the first part, we propose an overview of experimental and theoretical studies addressing current-induced magnetization excitations in magnetic tunnel…
The spin transfer switching current distribution within a cell was studied in magnetic tunnel junction based structures having alumina barriers with resistance-area product (RA) of 10 to 30 Ohm-um2 and tunneling magneto-resistance (TMR) of…