相关论文: Strong modulation of spin currents in bilayer grap…
Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultra-large absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through…
The conductance of graphene subject to a strong, tilted magnetic field exhibits a dramatic change from insulating to conducting behavior with tilt-angle, regarded as evidence for the transition from a canted antiferromagnetic (CAF) to a…
Spin orbit interactions are rapidly emerging as the key for enabling efficient current-controlled spintronic devices. Much work has focused on the role of spin-orbit coupling at heavy metal/ferromagnet interfaces in generating…
The unique optical and electronic properties of graphene allow one to realize active optical devices. While several types of graphene-based photonic modulators have already been demonstrated, the potential of combining the versatility of…
Thanks to its intrinsic ability to preserve spin coherence, graphene is a prime material for spintronics. In this review article, we summarize recent achievements related to spintronics in graphene quantum dots and motivate this field from…
Graphene on an insulating ferromagnetic substrate---ferromagnetic insulator or ferromagnetic metal with a tunnel barrier---is expected to exhibit giant proximity exchange and spin-orbit couplings. We use a realistic transport model of…
Graphene is a sturdy and chemically inert material exhibiting an exposed two-dimensional electron gas of high mobility. These combined properties enable the design of graphene composites either based on covalent or non- covalent coupling of…
Generating spintronic devices has been a goal for the nano-science. We have used density function theory to determine magnetic phases of single layer and bilayer lithium doped graphene nanoflakes. We have introduced graphene flakes as…
Using the renormalized-ring-diagram approximation, we study the compressibility of the interacting electrons in bilayer graphene. The compressibility is equivalent to the spin susceptibility apart from a constant factor. The chemical…
Ferromagnetic/antiferromagnetic bilayers are interfaced with normal metal/ferromagnetic bilayers to form F*/AF/N/F valves. The N-spacer thickness is chosen such that it mediates strong indirect exchange (RKKY) between the outer magnetic…
We study a bilayer structure consisting of an antiferromagnetic insulator and a normal metal. An electron current is driven in the normal metal with direction parallel to the interface between the materials. Due to interfacial exchange…
Ex-so-tic van der Waals heterostructures take advantage of the electrically tunable layer polarization to swap proximity exchange and spin-orbit coupling in the electronically active region. Perhaps the simplest example is Bernal bilayer…
This work analyzes the behavior of the interface between a ferromagnetic material and an alter-magnet. We use a well-established line of arguments based on electronic mean-field calculations to show that new surface phenomena that lead to…
We study the effects of strain on the electronic properties and persistent current characteristics of a graphene ring using the Dirac representation. For a slightly deformed graphene ring flake, one obtains sizable pseudomagnetic (gauge)…
Bilayer graphene is a highly tunable material: not only can one tune the Fermi energy using standard gates, as in single-layer graphene, but the band structure can also be modified by external perturbations such as transverse electric…
Strong, adjustable magnetic couplings are of great importance to all devices based on magnetic materials. Controlling the coupling between adjacent regions of a single magnetic layer, however, is challenging. In this work, we demonstrate…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
At the heart of current information nanotechnology lies the search for ideal platforms hosting the smallest possible magnets, i.e. single atoms with magnetic moments pointing out-of-plane, as requested in a binary-type of memory. For this…
Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge…
Magnetic proximity effect between topological insulator (TI) and ferromagnetic insulator (FMI) is considered to have great potential in spintronics. However, a complete determination of interfacial magnetic structure has been highly…