相关论文: Noise optimization of the source follower of a CMO…

In this paper, an in-pixel chopping technique to reduce the low-frequency or 1/f noise of the source follower (SF) transistor in an active pixel sensor (APS) is presented. The SF low-frequency noise is modulated at higher frequencies…

CMOS detectors offer many advantages over CCDs for optical and UV astronomical applications, especially in space where high radiation tolerance is required. However, astronomical instruments are most often designed for low light-level…

High 1/f noise in CryoCMOS devices is a critical parameter to keep under control in the design of complex circuits for low temperatures applications. Current models predict the 1/f noise to scale linearly with temperature, and gate oxide…

We present an exact expression for the $1/f$ contribution to the noise of the CMB temperature and polarization maps for a survey in which the scan pattern is isotropic. The result for polarization applies likewise to surveys with and…

In this paper, a low-noise CMOS image sensor with enhanced dynamic range (DR), using an in-pixel chopping technique, is presented. The proposed in-pixel chopping technique is used to reduce the low-frequency or 1/f noise of the source…

Cryogenic CMOS technology (cryo-CMOS) offers a scalable solution for quantum device interface fabrication. Several previous works have studied the characterization of CMOS technology at cryogenic temperatures for various process nodes.…

In many applications, such as development and testing of image processing algorithms, it is often necessary to simulate images containing realistic noise from solid-state photosensors. A high-level model of CCD and CMOS photosensors based…

This paper reports the detailed noise characterization, investigation of various noise sources and its mitigation to improve the performance of a cryogenic bolometer detector. The noise spectrum has been measured for a sapphire bolometer…

1/f noise is a critical figure of merit for the performance of transistors and circuits. For two-dimensional devices (2D-FETs), and especially for applications in the GHz range where short-channel FETs are required, velocity saturation (VS)…

We apply state-of-the art data analysis methods to a number of fictitious CMB mapping experiments, including 1/f noise, distilling the cosmological information from time-ordered data to maps to power spectrum estimates, and find that in all…

A single-photon CMOS image sensor design based on pinned photodiode (PPD) with multiple charge transfers and sampling is described. In the proposed pixel architecture, the photogenerated signal is sampled non-destructively multiple times…

In this paper, we review the 1/f-type noise properties of nanoelectronic devices focusing on three demonstrative platforms: resistive switching memories, graphene nanogaps and single-molecule nanowires. The functionality of such ultrasmall…

Scientific Complementary Metal Oxide Semiconductor (sCMOS) sensors are finding increasingly more applications in astronomical observations, thanks to their advantages over charge-coupled devices (CCDs) such as a higher readout frame rate,…

CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a…

The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at…

The miniaturization of transistors down to 5nm and beyond, plus the increasing complexity of integrated circuits, significantly aggravate short channel effects, and demand analysis and optimization of more design corners and modes.…

We present a new method to measure 1/f noise in Josephson quantum bits (qubits) that yields low-frequency spectra below 1Hz. Comparison of noise taken at positive and negative bias of a phase qubit shows the dominant noise source to be flux…

Non-Markovian $1/f$ noise consists a dominant source of decoherence in superconducting qubits, yet its slow nature poses a significant challenge for accurate simulation. Here we develop a hierarchical equations of motion (HEOM) framework…

In recent years, there has been a gradual increase in the performance of Complementary Metal Oxide Semiconductor (CMOS) cameras. These cameras have gained popularity as a viable alternative to charge-coupled device (CCD) cameras in a wide…

Single-photon-level imaging at 1550 nm is a key driver for significant advancements in the next-generation laser detection technology. This cutting-edge approach plays a vital role in space ranging, target recognition, and three-dimensional…