相关论文: Antiferromagnetic multi-level memory cell

Engineering all fundamental magnetic phases within a single material platform would mark a significant milestone in materials science and spintronics, reducing complexity and costs in device fabrication by eliminating the need for…

Reliable operation of perpendicular spin-transfer-torque magnetic random-access memory (p-STT-MRAM) requires control of magnetic alignment within the synthetic antiferromagnet (SAF) reference layer. At nanopillar dimensions, however,…

The ability to rapidly manipulate domain walls (DWs) in magnetic materials is key to developing novel high-speed spintronic memory and computing devices. Antiferromagnetic (AFM) materials present a particularly promising platform due to…

Compared with ferromagnetic counterparts, antiferromagnetic materials are considered as the future of spintronic applications since these materials are robust against the magnetic perturbation, produce no stray field, and display ultrafast…

The antiferromagnetic (AFM) to ferromagnetic (FM) first order phase transition of an epitaxial FeRh thin-film has been studied with x-ray magnetic circular dichroism using photoemission electron microscopy. The FM phase is magnetized…

Antiferromagnets (AFMs) are strong candidates for the future spintronic and memory applications largely because of their inherently fast dynamics and lack of stray fields, with Mn2Au being one of the most promising. For the numerical…

Altermagnetism has recently emerged as a new class of spin compensated magnetic materials that exhibit momentum dependent spin splitting despite having zero net magnetization. The origin of these electronic signatures lies in symmetry…

Antiferromagnetic spintronics have attracted wide attention due to its great potential in constructing ultra-dense and ultra-fast antiferromagnetic memory that suits modern high-performance information technology. The electrical 180o…

Adiabatic dynamics of conduction electrons in antiferromagnetic (AFM) materials with slowly varying spin texture is developed. Quite different from the ferromagnetic (FM) case, adiabaticity in AFM texture does not imply perfect alignment of…

Antiferromagnetic transition metal oxides are an established and widely studied materials system in the context of spin-based electronics, commonly used as passive elements in exchange bias-based memory devices. Currently, major interest…

Antiferromagnets (AFMs) exhibit spin arrangements with no net magnetization, positioning them as promising candidates for spintronics applications. While electrical manipulation of the single-crystal AFMs, composed of periodic spin…

Electric field-induced magnetization switching in multiferroics holds profound promise for ultra-low-energy computing in beyond Moore's law era. Bistable nanomagnets in the multiferroics are usually deemed to be suitable for storing a…

Demonstration of ultra-low energy switching mechanisms is an imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) orders and their manipulation promises an ideal combination of state variables…

Tetragonal phase of CuMnAs progressively appears as one of the key materials for antiferromagnetic spintronics due to efficient current-induced spin-orbit torques whose existence can be directly inferred from crystal symmetry. Theoretical…

Antiferromagnets (AFMs), in contrast to ferromagnets, show a nontrivial magnetic structure with zero net magnetization. However, they share a number of spintronic effects with ferromagnets, including spin-pumping and spin transfer torques.…

Spintronics is expected as the next-generation technology based on the novel notch of spin degree of freedom of electrons. Half metals, a class of materials which behave as a metal in one spin direction and an insulator in the opposite spin…

Ferromagnets with high spin polarization are known to be valuable for spintronics--a research field that exploits the spin degree of freedom in information technologies. Recently, antiferromagnets have emerged as promising alternative…

Nanoscale superlattices with uniaxial ferromagnetic layers antiferromagnetically coupled through non-magnetic spacers are recently used as components of magnetoresistive and recording devices. In the last years intensive experimental…

Altermagnet is a class of antiferromagnets, which shows a staggered spin ordering with wave vector ${\bm q}=0$, while its net magnetization is canceled out in the limit of zero relativistic spin-orbit coupling. The simplest case is when the…

Altermagnets exhibit nonrelativistic spin splitting due to the breaking of time-reversal symmetry and have been garnering significant attention as promising materials for spintronic applications. In contrast, conventional antiferromagnets…