相关论文: Violet emission from bulk Si prompted by surface p…
As one of the most important semiconductors, silicon (Si) has been used to fabricate electronic devices, waveguides, detectors, and solar cells etc. However, its indirect bandgap hinders the use of Si for making good emitters1. For…
Silicon's inherently indirect bandgap severely limits its radiative efficiency, posing a fundamental challenge to the development of practical silicon-based light sources. While strategies such as nanoscale confinement of electrons and…
A rigorous formulation for the scattering of surface plasmon polaritons (SPP) from a one-dimensional surface defect of any shape that yields the electromagnetic field in the vacuum half-space above the vacuum-metal interface is developed by…
The subwavelength confinement of surface plasmon polaritons (SPPs) makes them attractive for various applications such as sensing, light generation and solar energy conversion. Near-field microscopy associated with interferometric detection…
Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically…
Silicon indirect bandgap fundamentally limits its ability to emit light, hindering the development of silicon-based light sources. Here, we explore a conceptually new solution to this long-standing challenge. We demonstrate ultrabroadband…
We show that the surface plasmon polariton (SPP) radiation patterns of point-dipole emitters in the vicinity of a metal-dielectric interface are generally asymmetric with respect to the location of the emitter. In particular rotating…
Surface plasmon polaritons (SPPs) can be understood as two-dimensional light confined to a conductor-dielectric interface via plasmonic excitations. While low-energy SPPs behave similarly to photons, higher-frequency SPPs resemble surface…
The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an…
We have observed laser-like emission of surface plasmon polaritons (SPPs) decoupled to the glass prism in an attenuated total reflection setup. SPPs were excited by optically pumped molecules in a polymeric film deposited on the top of the…
By coupling silicon nanowires (~150 nm diameter, 20 micron length) with an {\Omega}-shaped plasmonic nanocavity we are able to generate broadband visible luminescence, which is induced by high-order hybrid nanocavity-surface plasmon modes.…
Plasmonics is based on surface plasmon polariton (SPP) modes which can be laterally confined below the diffraction limit, thereby enabling ultracompact optical components. In order to exploit this potential, the fundamental bottleneck of…
The primary challenge in silicon photonics is achieving efficient luminescence in the communication band, crucial for its large-scale application. Despite significant efforts, silicon light sources still suffer from low efficiency and…
Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spin-coated with Er-doped (6 at. %) silica-gel films (0.13…
The condition of phase matching prohibits the transfer of excitation from free-space photons to surface plasmon polaritons (SPP). We propose and analyze a scheme that excites an ensemble of emitters in a collective state, which is phase…
Surface plasmon polaritons (SPP or SP) are electromagnetic waves propagating along metal dielectric interfaces and existing over a wide range of frequencies. They have become popular because of their sub-wavelength confinement and the…
Surface plasmon polaritons (SPPs) are locally excited at silver surfaces using (~100) nm-sized nanodiamonds (NDs) with multiple nitrogen-vacancy (NV) centers (~400). The fluorescence from an externally illuminated (at 532 nm) ND and from…
The low efficiency of porous silicon (p-Si) luminescence hinders the development of silicon-based optoelectronic devices. The increase in p-Si emission using near-field enhancement, owing to the incorporation of gold nanoparticles (AuNPs)…
Silicon (Si) nanoparticles (NPs) were synthesized by transforming Si wafer surface to ammonium silicon hexafluoride (ASH) or (NH4)2SiF6 under acid vapor treatment. Si-NPs are embedded within the polycrystalline (ASH) layer formed on the Si…
Silicon dominates electronics, optoelectronics, photovoltaics and photonics thanks to its suitable properties, abundance, and well-developed cost-effective manufacturing processes. Recently, crystalline silicon has been demonstrated to be…