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Mott insulators with a half-filled band of electrons on the triangular lattice have been recently studied in a variety of organic compounds. All of these compounds undergo transitions to metallic/superconducting states under moderate…

强关联电子 · 物理学 2008-05-09 Yang Qi , Subir Sachdev

Metal insulator transitions driven by local Coulomb interactions are among the most fascinating phenomena in condensed matter physics. They occur in a large variety of transition metal compounds. Most of these strongly correlated materials…

强关联电子 · 物理学 2007-05-23 A. Liebsch

Interaction-driven metal-insulator transitions or Mott transitions are widely observed in condensed-matter systems. In multi-orbital systems, many-body physics is richer in which an orbital-selective metal-insulator transition is an…

强关联电子 · 物理学 2018-11-09 Hanghui Chen

The quantum spin liquid candidate NaYbSe$_2$ was recently reported to exhibit a Mott transition under pressure. Superconductivity was observed in the high-pressure metallic phase, raising the question concerning its relation with the…

强关联电子 · 物理学 2022-02-16 Yuanji Xu , Yutao Sheng , Yi-feng Yang

Insulator-to-metal transition in Ca$_{2}$RuO$_{4}$ has drawn keen attention because of its sensitivity to various stimulation and its potential controllability. Here, we report a direct observation of Fermi surface, which emerges upon…

The insulator-metal transition in Mott insulators, known as the Mott transition, is usually accompanied with various novel quantum phenomena, such as unconventional superconductivity, non-Fermi liquid behavior and colossal…

强关联电子 · 物理学 2023-04-21 Ye Yang , Fanghang Yu , Xikai Wen , Zhigang Gui , Yuqing Zhang , Fangyang Zhan , Rui Wang , Jianjun Ying , Xianhui Chen

The metal-insulator and spin state transitions of CoO under high pressure are studied by using density functional theory combined with dynamical mean-field theory. Our calculations predict that the metal-insulator transition in CoO is a…

强关联电子 · 物理学 2014-12-04 Li Huang , Yilin Wang , Xi Dai

Quantum transitions between the Mott insulator and metals by controlling filling in two-dimensional square lattice are characterized by a large dynamical exponent $z=4$ where the origin of unusual metallic properties near the Mott insulator…

强关联电子 · 物理学 2007-05-23 Masatoshi Imada , Fakher F. Assaad , Hirokazu Tsunetsugu , Yukitoshi Motome

When electron-electron interaction dominates over other electronic energy scales, exotic, collective phenomena often emerge out of seemingly ordinary matter. The strongly correlated phenomena, such as quantum spin liquid and unconventional…

We explore the ground-state properties of the two-band Hubbard model with degenerate electronic bands, parametrized by nearest-neighbor hopping $t$, intra- and inter-orbital on-site Coulomb repulsions $U$ and $U^\prime$, and Hund coupling…

强关联电子 · 物理学 2018-08-30 Caterina De Franco , Luca F. Tocchio , Federico Becca

The gas-liquid transition is a first-order transition terminating at a finite-temperature critical point with diverging density fluctuations. Mott transition, a metal-insulator transition driven by Coulomb repulsion between electrons, has…

超导电性 · 物理学 2007-05-23 Masatoshi Imada

Light-manipulation of correlated electronic phases in solids offers the tantalizing prospect of realizing electronic devices operating at the ultrafast time-scale. In this context, the experimental realization of non-equilibrium transitions…

强关联电子 · 物理学 2021-04-09 Francesco Grandi , Martin Eckstein

We have performed in-plane transport measurements on the two-dimensional organic salt $\kappa$-(BEDT-TTF)$_{2}$Cu[N(CN)$_{2}$]Cl. A variable (gas) pressure technique allows for a detailed study of the changes in conductivity through the…

强关联电子 · 物理学 2009-11-10 P. Limelette , P. Wzietek , S. Florens , A. Georges , T. A. Costi , C. Pasquier , D. Jerome , C. Meziere , P. Batail

We study Mott insulator - superfluid transition in a two-band boson Hubbard model, which can be mapped onto a spin-1/2 XY model with spins coupled to an additional Ising degree of freedom. By using a modified mean field theory that include…

统计力学 · 物理学 2009-11-13 Huai-Bin Zhuang , Michael Ma , Xi Dai , Fu-Chun Zhang

We present {\it ab initio} LDA+DMFT results for the many-particle density of states of $VO_{2}$ on the metallic side of the strongly first-order ($T$-driven) insulator-metal transition. In strong contrast to LDA predictions, there is {\it…

强关联电子 · 物理学 2015-06-24 M. S. Laad , L. Craco , E. Müller-Hartmann

We consider a minimal model to investigate the metal-insulator transition in VO$_2$. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model…

强关联电子 · 物理学 2017-01-12 Óscar Nájera , Marcello Civelli , Vladimir Dobrosavljević , Marcelo J. Rozenberg

We investigate a quarter-filled two-band Hubbard model involving a crystal-field splitting, which lifts the orbital degeneracy as well as an inter-orbital hopping (inter-band hybridization). Both terms are relevant to the realistic…

强关联电子 · 物理学 2008-07-28 Alexander I. Poteryaev , Michel Ferrero , Antoine Georges , Olivier Parcollet

We study the Mott transition, antiferromagnetism and superconductivity in layered organic conductors using Cellular Dynamical Mean Field Theory for the frustrated Hubbard model. A d-wave superconducting phase appears between an…

强关联电子 · 物理学 2009-11-11 B. Kyung , A. -M. S. Tremblay

We investigate the influence of an unoccupied band on the transport properties of a strongly correlated electron system. For that purpose, additional orbitals are coupled to a Hubbard model via hybridization. The filling is one electron per…

凝聚态物理 · 物理学 2009-10-28 Stefan Blawid , Hoangh Anh Tuan , Takashi Yanagisawa , Peter Fulde

I investigate band and Mott insulating states in a two-band Hubbard model, with the aim of understanding the differences between the idealised one-orbital model and the more realistic multi-band case. Using a projection ansatz I show that…

强关联电子 · 物理学 2009-11-13 J. P. Hague
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