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相关论文: Kondo effect in charm/bottom nuclei

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We theoretically study enhancement mechanisms of the Kondo effect in multilevel quantum dots. In quantum dots fabricated on semiconductors, the energy difference between discrete levels \Delta is tunable by applying a magnetic field. With…

介观与纳米尺度物理 · 物理学 2009-11-10 Mikio Eto

The "QCD Kondo effect" stems from the color exchange interaction in QCD with non-Abelian property, and can be realized in a high-density quark matter containing heavy-quark impurities. We propose a novel type of the QCD Kondo effect induced…

高能物理 - 唯象学 · 物理学 2016-10-12 Sho Ozaki , Kazunori Itakura , Yoshio Kuramoto

We observe a strong Kondo effect in a semiconductor quantum dot when a small magnetic field is applied. The Coulomb blockade for electron tunneling is overcome completely by the Kondo effect and the conductance reaches the unitary-limit…

介观与纳米尺度物理 · 物理学 2009-10-31 W. G. van der Wiel , S. De Franceschi , T. Fujisawa , J. M. Elzerman , S. Tarucha , L. P. Kouwenhoven

We investigate the Fano-Kondo interplay in an Aharonov-Bohm ring with an embedded non-interacting quantum dot and a Coulomb interacting quantum dot. Using a slave-boson mean-field approximation we diagonalize the Hamiltonian via scattering…

介观与纳米尺度物理 · 物理学 2015-06-12 R. R. Agundez , J. Verduijn , S. Rogge , M. Blaauboer

Magnetic oscillations in strongly correlated insulating systems have garnered interest due to oscillations seemingly originating from the bulk, despite an anticipated gapped spectrum. We use the large-$N$ mean-field theory to study the…

强关联电子 · 物理学 2026-02-04 Kaize Wang , Yang Ge , Yashar Komijani

Based on ab-initio calculations we identify possible scenarios for the Kondo effect due to Co ad-atoms on graphene. General symmetry arguments show that for magnetic atoms in high-symmetry positions, the Kondo effect in graphene is…

强关联电子 · 物理学 2010-03-22 T. O. Wehling , A. V. Balatsky , M. I. Katsnelson , A. I. Lichtenstein , A. Rosch

Electron tunneling through a double quantum dot molecule side attached to a quantum wire, in the Kondo regime, is studied. The mean-field finite-U slave-boson formalism is used to obtain the solution of the problem. We found conductance…

介观与纳米尺度物理 · 物理学 2009-11-10 Gustavo A. Lara , Pedro A. Orellana , J. Yanez , Enrique V. Anda

We investigate the Kondo effect in a double-quantum-dot which is capacitively coupled to a charge-Qubit. It is shown that due to this capacitive coupling, the bare inter-dot repulsive interaction in the double-quantum-dot is effectively…

强关联电子 · 物理学 2018-06-20 S. Mojtaba Tabatabaei

We investigate the enhancement of the Kondo effect in quantum dots with an even number of electrons, using a scaling method and a mean field theory. We evaluate the Kondo temperature $T_K$ as a function of the energy difference between…

介观与纳米尺度物理 · 物理学 2009-11-07 Mikio Eto , Yuli V. Nazarov

In this paper we present a systematic analysis on the average interaction between the last protons and neutrons in atomic nuclei, which can be extracted from the double differences of nuclear binding energies. The empirical average…

核理论 · 物理学 2012-10-19 Chong Qi

The Kondo effect originates from the spin exchange scattering of itinerant electrons with a localized magnetic impurity. Here, we consider generalization of Weyl-type electrons with their spin locked on a spherical Fermi surface in an…

介观与纳米尺度物理 · 物理学 2025-12-19 Kinari Goto , Yusuke Nishida

The interplay of electron-electron and electron-phonon interactions is studied analytically in the Kondo regime. A Holstein electron-phonon coupling is shown to produce a weakening of the gate voltage dependence of the Kondo temperature and…

强关联电子 · 物理学 2007-05-23 C. A. Balseiro , P. S. Cornaglia , D. R. Grempel

The Kondo effect arises from many-body interactions between localized magnetic impurities and conduction electrons, affecting electronic properties at low temperatures. In this study, we investigate the Kondo effect within a two-dimensional…

强关联电子 · 物理学 2025-09-30 T. O. Puel , M. A. Manya , G. S. Diniz , E. Vernek , G. B. Martins

When individual quantum spins are placed in close proximity to conducting substrates, the localized spin is coupled to the nearby itinerant conduction electrons via Kondo exchange. In the strong coupling limit this can result in the Kondo…

介观与纳米尺度物理 · 物理学 2014-11-04 F. Delgado , C. F. Hirjibehedin , J. Fernandez-Rossier

Motivated by recent STM experiments, we explore the magnetic field induced Kondo effect that takes place at symmetry protected level crossings in finite Co adatom chains. We argue that the effective two-level system realized at a level…

强关联电子 · 物理学 2019-10-30 Bimla Danu , Fakher Assaad , Frédéric Mila

Motivated by recent theoretical and experimental advances in quantum simulations using alkaline earth(AE) atoms, we put forward a proposal to detect the Kondo physics in a cold atomic system. It has been demonstrated that the intrinsic…

量子气体 · 物理学 2021-08-10 Yanting Cheng , Xin Chen , Ren Zhang

A new ``Dynamical Mean-field theory'' based approach for the Kondo lattice model with quantum spins is introduced. The inspection of exactly solvable limiting cases and several known approximation methods, namely the second-order…

强关联电子 · 物理学 2009-11-07 D. Meyer , C. Santos , W. Nolting

The breakdown of the Kondo effect may be the origin of the anomalous properties of the heavy-fermion compounds at low temperatures. We study the dynamics of one impurity embedded in an antiferromagnetic host at the quantum critical point…

强关联电子 · 物理学 2009-10-31 D. Controzzi

Moir\'e structures, along with line-graph-based $d$-electron systems, represent a setting to realize flat bands. One form of the associated strong correlation physics is the Kondo effect. Here, we address the recently observed Kondo-driven…

强关联电子 · 物理学 2025-03-13 Fang Xie , Lei Chen , Qimiao Si

We investigate the dependence of the ground state of a multi-level quantum dot on the coupling to an external fermionic system and on the interactions in the dot. As the coupling to the external system increases, the rearrangement of the…

介观与纳米尺度物理 · 物理学 2009-10-31 A. L. Chudnovskiy , S. E. Ulloa