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The valley pseudospin in monolayer transition metal dichalcogenides (TMDs) has been proposed as a new way to manipulate information in various optoelectronic devices. This relies on a large valley polarization that remains stable over long…

介观与纳米尺度物理 · 物理学 2017-12-22 Fahad Mahmood , Zhanybek Alpichshev , Yi-Hsien Lee , Jing Kong , Nuh Gedik

Monolayer molybdenum disulfide (MoS$_2$) has emerged as an excellent 2D model system because of its two inequivalent, direct-gap valleys that lead to exotic bound and excited states. Here we focus on one such bound state, the negatively…

材料科学 · 物理学 2016-06-01 Jason W. Christopher , Bennett B. Goldberg , Anna K. Swan

Monolayer (1L) transition metal dichalcogenides (TMDCs) are attractive materials for several optoelectronic applications because of their strong excitonic resonances and valley-selective response. Valley excitons in 1L-TMDCs are formed at…

光学 · 物理学 2018-05-30 Alex Krasnok , Andrea Alu

Exciton resonances in monolayer transition-metal dichalcogenides (TMDs) provide exceptionally strong light-matter interaction at room temperature. Their spectral line shape is critical in the design of a myriad of optoelectronic devices,…

介观与纳米尺度物理 · 物理学 2023-06-28 Jorik van de Groep , Qitong Li , Jung-Hwan Song , Pieter G. Kik , Mark L. Brongersma

The established spin splitting in monolayer (ML) of transition metal dichalcogenides (TMDs) that is caused by inversion symmetry breaking is dictated by mirror symmetry operations to exhibit fully out-of-plane direction of spin…

While conventional semiconductor technology relies on the manipulation of electrical charge for the implementation of computational logic, additional degrees of freedom such as spin and valley offer alternative avenues for the encoding of…

Optical interband transitions in monolayer transition metal dichalcogenides such as WSe2 and MoS2 are governed by chiral selection rules. This allows efficient optical initialization of an electron in a specific K-valley in momentum space.…

介观与纳米尺度物理 · 物理学 2014-09-09 G. Wang , L. Bouet , D. Lagarde , M. Vidal , A. Balocchi , T. Amand , X. Marie , B. Urbaszek

Electrons in monolayer transition metal dichalcogenides (TMDs) possess both the valley and spin degree of freedom. These internal quantum degrees of freedom have provided an ideal laboratory for exploring both new physical phenomena and…

介观与纳米尺度物理 · 物理学 2017-02-21 Zefang Wang , Jie Shan , kin Fai Mak

The newly discovered valley degree of freedom in atomically thin two-dimensional transition metal dichalcogenides (TMD) offers a promising platform to explore rich nonlinear physics, such as spinor Bose-Einstein condensate (BEC) and novel…

介观与纳米尺度物理 · 物理学 2023-01-24 Pasquale Cilibrizzi , Xiaoze Liu , Peiyao Zhang , Chenzhe Wang , Quanwei Li , Sui Yang , Xiang Zhang

Charge doping in transition metal dichalcogenide is currently a subject of high importance for future electronic and optoelectronic applications. Here we demonstrate chemical doping in CVD grown monolayer (1L) of WS2 by a few commonly used…

介观与纳米尺度物理 · 物理学 2020-01-08 Anand P. S. Gaur , Adriana M. Rivera , Saroj P. Dash , Sandwip Dey , Ram S. Katiyar , Satyaprakash Sahoo

Interfacing atomically thin van der Waals semiconductors with magnetic substrates enables additional control on their intrinsic valley degree of freedom and provides a promising platform for the development of novel valleytronic devices for…

Valley polarization is amongst the most critical attributes of atomically thin materials. However, achieving a high contrast from monolayer transition metal dichalcogenides (TMDs) has so far been challenging. In this work, a giant valley…

Transition metal dichalcogenide (TMDC) monolayers are newly discovered semiconductors for a wide range of applications in electronics and optoelectronics. Most studies have focused on binary monolayers that share common properties: direct…

We describe a facile technique based on polymer encapsulation to apply several percent controllable strains to monolayer and few-layer Transition Metal Dichalcogenides (TMDs). We use this technique to study the lattice response to strain…

We perform photoluminescence experiments at 4K on two different transition metal diselenide monolayers, namely MoSe2 and WSe2 in magnetic fields $B_z$ up to 9T applied perpendicular to the sample plane. In MoSe2 monolayers the valley…

材料科学 · 物理学 2015-06-12 G. Wang , L. Bouet , M. M. Glazov , T. Amand , E. L. Ivchenko , E. Palleau , X. Marie , B. Urbaszek

Photoluminescence (PL) of transition metal dichalcogenide (TMD) monolayers is strongly influenced by the dielectric environment. The defect states present in the substrate induces uncontrollable doping in the TMD monolayer and thereby…

Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stamping directly on broadband dielectric resonators, which have the ability to enhance the spontaneous emission rate and brightness of…

Alloying offers a way to tune many of the properties of the transition metal dichalcogenide (TMD) monolayers. While these systems in many cases have been thoroughly investigated previously, the fundamental understanding of critical…

材料科学 · 物理学 2023-04-17 Christopher Linderälv , J. Magnus Rahm , Paul Erhart

The photoluminescence (PL) in monolayer transition metal dichalcogenides (TMDs) is dominated by recombination of electrons in the conduction band with holes in the spin-orbit split valence bands, and there are two distinct emission features…

材料科学 · 物理学 2018-12-05 Kathleen M. McCreary , Aubrey T. Hanbicki , Saujan V. Sivaram , Berend T. Jonker

Transition metal dichalcogenides (TMDs) are an exciting family of 2D materials; a member of this family, MoS$_2$, became the first measured monolayer semiconductor. In this article, a generalized phenomenological continuum model for the…