相关论文: Spin to charge conversion in MoS$_{2}$ monolayer w…
1H-phase monolayer transition-metal dichalcogenides have spin-split electronic band structures near the K(K') point due to strong spin-orbit coupling and intrinsic inversion symmetry breaking. In case of the monolayer MoX2 (X=S, Se, Te),…
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…
We investigate electronic transport through gate-defined quantum dots in molybdenum disulfide MoS$_2$ using an integrated charge detector. We observe a crossover from two weakly coupled single dots to a strongly coupled double quantum dot.…
The emergence of transition metal dichalcogenides (TMD) as crystalline atomically thin semiconductors has created a tremendous amount of scientific and technological interest. Many novel device concepts have been proposed and realized…
Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in…
Monolayer transition metal dichalcogenides (TMDs) are direct gap semiconductors emerging promising applications in diverse optoelectronic devices. To improve performance, recent investigations have been systematically focused on the tuning…
We study perfect valley polarization in a molybdenum disulfide MoS2 nanoribbon monolayer using two bands Hamiltonian model and non-equilibrium Green's function method. The device consists of a one-dimensional quantum wire of MoS2 monolayer…
We study analytically and numerically spin effects in MoS_2 monolayer armchair quantum wires and quantum dots. The interplay between intrinsic and Rashba spin orbit interactions induced by an electric field leads to helical modes, giving…
The spin-pumping mechanism is probed through a tunnelling MgO interlayer in Fe/Pt bilayers. We show by ferromagnetic resonance technique and spin-pumping experiments that spin currents can tunnel through the MgO interlayer for thickness up…
Controlling magnetism and electronic properties of two-dimensional (2D) materials by purely electrical means is crucial and highly sought for high-efficiency spintronics devices since electric field can be easily applied locally compared…
The Kekule pattern of the (anti)ferromagnetic exchange field on monolayer MoS2 can be induced by proximity to the (111) surface of BiFeO3 on both sides. The three-band tight binding model of the MoS2 layer with Kekule patterned exchange…
We explore proximity-induced ferromagnetism on transition metal dichalcogenide (TMD), focusing on molybdenum ditelluride (MoTe$_{2}$) ribbons with zigzag edges, deposited on ferromagnetic europium oxide (EuO). A three-orbital tight-binding…
Spin currents are used to write information in magnetic random access memory (MRAM) devices by switching the magnetization direction of one of the ferromagnetic electrodes of a magnetic tunnel junction (MTJ) nanopillar. Different physical…
The objective of this work is to study the effects of charge redistribution, applied layer-normal electric fields, applied strain, and layer engineering on the band alignment of Black Phosphorus (BP)/Molybdenum disulphide (MoS2)…
We report the observation of efficient charge-to-spin conversion in the three-dimensional topological insulator (TI) Bi2Se3 and Ag bilayer by the spin-torque ferromagnetic resonance technique. The spin orbit torque ratio in the…
We present a detailed theoretical investigation on the electronic transport properties of $n$-type monolayer (ML) transition metal dichalcogenides (TMDs) at low temperature in the presence of proximity-induced interactions such as Rashba…
We report efficient spin to charge conversion (SCC) in the topological insulator (TI) based heterostructure ($BiSbTe_{1.5}Se_{1.5}/Cu/Ni_{80}Fe_{20}$) by using spin-pumping technique where $BiSbTe_{1.5}Se_{1.5}$ is the TI and…
The conversion of spin information into electrical signals is indispensable for spintronic technologies. Spin-to-charge conversion in ferromagnetic tunnel contacts is well-described using linear (spin-)transport equations, provided that…
We theoretically investigate spin transport in a junction system composed of a ferromagnetic insulator (FI) and a two-dimensional electron gas (2DEG) with both Rashba and Dresselhaus spin-orbit interactions. We briefly present our findings…
Strain can efficiently modulate the bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional mechanical strain-application methodologies that rely on flexible, patterned or nano-indented substrates are severely limited…