相关论文: Controlling photon emission from silicon for photo…
This work demonstrates quasi-vertical beta-Ga2O3 Schottky barrier diodes (SBDs) fabricated on c-plane sapphire using an all-LPCVD, plasma-free process integrating epitaxial growth of high-quality beta-Ga2O3 and in-situ Ga-assisted etching.…
We present new analytic calculations of the coupling between ultraviolet resonance photons and the population of the hyperfine states in the light elements (H, D, He3+) which include several previously neglected physical processes. Among…
This paper reports on the deposition and photoluminescence of amorphous and crystalline thin films of zinc gallium oxide with Ga:Zn atomic ratio varied between 0.3 and 5.7. The films are prepared by reactive direct current magnetron…
In this paper, we demonstrate strip-loaded guiding optical components realized on a 27 nm ultra-thin SOI platform. The absence of physically etched boundaries within the guiding core suppresses majorly the scattering loss, as shown by us…
The single-photon scattering in a rectangular waveguide by a V-type three-level emitter is studied for large range of input-photon energy beyond the single-mode region. By using Lippmann-Schwinger formalism, the necessary and sufficient…
Triggered sources of entangled photons play crucial roles in almost any existing protocol of quantum information science. The possibility to generate these non-classical states of light with high speed and using electrical pulses could…
We demonstrate a nanotip electron source based on a graded index multimode silica optical fiber, tapered at one end to a radius of curvature r ~ 50 nm and coated with a thin film of gold. We report observation of laser-induced electron…
Integrating solid-state quantum emitters with nanophotonic resonators is essential for efficient spin-photon interfacing and optical networking applications. While diamond color centers have proven to be excellent candidates for emerging…
Bound electron-hole excitonic states are generally not expected to form with charges of negative effective mass. We identify such excitons in a single layer of the semiconductor WSe2, where they give rise to narrow-band upconverted…
Precise control of ion energy distribution functions (IEDF) is crucial for selectivity as well as control over sputter rate and substrate damage in nanoscale plasma processes. In this work, a low frequency (100 kHz) tailored…
The surface states of the active TiO2 layer is crucial while fabricating an efficient solar cell. This work experimentally analyses the effect of exposing TiO2 based electron transport layer (ETL) to the ultraviolet-ozone (UV-O3) and…
Solid state quantum emitters are a mainstay of quantum nanophotonics as integrated single photon sources (SPS) and optical nanoprobes. Integrating such emitters with active nanophotonic elements is desirable in order to attain efficient…
Nearly two-orders of magnitude increase in room-temperature band-to-band (1.067 eV) infrared emission from crystalline silicon, coated with erbium-doped sol-gel films, have been achieved. Phonon-assisted band-to-band emission from coated…
Generation of an ultra-bright, deterministic, solid-state single photon source with high photon collection rate is an imperative requirement for quantum technologies. In this direction, various nanophotonic systems coupled with single…
We compute photon emission rate enhancement near the QCD critical point using an effective theory of dynamic critical phenomena and derive a universal photon spectrum. The emission rate scales similarly to conductivity, increasing with the…
Quantum networking and computing technologies demand scalable hardware with high-speed control for large systems of quantum devices. Solid-state platforms have emerged as promising candidates, offering scalable fabrication for a wide range…
The combination of established nanofabrication with attractive material properties makes silicon a promising material for quantum technologies, where implanted dopants serve as qubits with high density and excellent coherence even at…
Carbon nanotube Schottky diodes have been fabricated in an all-photolithographic process using dissimilar contact metals on high-frequency compatible substrates (quartz and sapphire). Diodes show near-ideal behavior, and rectify currents of…
Physical mechanisms of electron emission from fibre optic nanotips, namely, tunnelling, multi-photon, and thermionic emission, either prevent fast switching or require intense laser fields. Time-resolved electron emission from nano-sized…
Electro-optic (EO) modulation is a key functionality to have on-chip. However, achieving a notable linear EO effect in stoichiometric silicon nitride has been a persistent challenge due to the material's intrinsic properties. Recent…