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相关论文: Tunable site- and orbital-selective Mott transitio…

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The low-energy properties of transition metal oxides (TMOs) are governed by the electrons occupying strongly correlated $d$-orbitals that are hybridized with surrounding ligand oxygen $p$ orbitals to varying degrees. Their physics is thus…

强关联电子 · 物理学 2025-08-05 Samuel Milner , Steven Johnston , Adrian Feiguin

We provide experimental and theoretical evidence for a novel type of pressure-induced insulator-metal transition characterized by site-selective delocalization of the electrons. M\"ossbauer spectroscopy, X-ray diffraction and electrical…

Emergent magnetic states at oxide interfaces arise from the interplay of charge transfer, orbital reconstruction, and dimensional confinement, offering a route to engineered correlated-electron behavior in nanoscale spintronic materials.…

We report synchrotron x-ray scattering studies of charge/orbitally ordered (COO) nanoclusters in Nd$_{0.7}$Sr$_{0.3}$MnO$_3$. We find that the COO nanoclusters are strongly suppressed in an applied magnetic field, and that their decreasing…

凝聚态物理 · 物理学 2009-11-07 T. Y. Koo , V. Kiryukhin , P. A. Sharma , J. P. Hill , S-W. Cheong

Calculations employing the local density approximation combined with static and dynamical mean-field theories (LDA+U and LDA+DMFT) indicate that the metal-insulator transition observed at 32 GPa in paramagnetic LaMnO3 at room temperature is…

强关联电子 · 物理学 2007-05-23 A. Yamasaki , M. Feldbacher , Y. -F. Yang , O. K. Andersen , K. Held

We investigate the effect of charge self-consistency (CSC) in density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations compared to simpler "one-shot" calculations for materials where interaction effects lead to a…

强关联电子 · 物理学 2020-07-22 Alexander Hampel , Sophie Beck , Claude Ederer

Late transition-metal oxides with small charge-transfer energy $\Delta$ raise issues for state-of-the-art correlated electronic structure schemes such as the combination of density functional theory (DFT) with dynamical mean-field theory…

强关联电子 · 物理学 2019-09-17 Frank Lechermann , Wolfgang Körner , Daniel F. Urban , Christian Elsässer

The first-order metal-insulator transition (MIT) in paramagnetic $V_{2}O_{3}$ is studied within the ab-initio scheme LDA+DMFT, which merges the local density approximation (LDA) with dynamical mean field theory (DMFT). With a fixed value of…

强关联电子 · 物理学 2009-11-07 M. S. Laad , L. Craco , E. Müller-Hartmann

We study the electronic structure, magnetic state, and phase stability of paramagnetic BiNiO$_3$ near a pressure-induced Mott insulator-to-metal transition (MIT) by employing a combination of density functional and dynamical mean-field…

强关联电子 · 物理学 2019-11-06 I. Leonov , A. S. Belozerov , S. L. Skornyakov

We study the effects of electron-electron interactions and hole doping on the electronic structure of Cu-doped NaFeAs using the density functional theory plus dynamical mean-field theory (DFT+DMFT) method. In particular, we employ an…

强关联电子 · 物理学 2021-04-14 S. L. Skornyakov , V. I. Anisimov , I. Leonov

Motivated by recent progress in the realization of artificial gauge fields and $SU(N)$ Mott insulators using alkaline-earth-like atoms in optical lattices, we develop an unbiased $SU(N)$ real-space dynamical mean-field theory (DMFT)…

强关联电子 · 物理学 2019-01-09 Mohsen Hafez-Torbati , Walter Hofstetter

Spin-orbit coupling has been reported to be responsible for the insulating nature of the 5d$^1$ osmate double perovskite Ba$_2$NaOsO$_6$ (BNOO). However, whether spin-orbit coupling indeed drives the metal-to-insulator transition (MIT) in…

强关联电子 · 物理学 2024-01-17 Dario Fiore Mosca , Hermann Schnait , Lorenzo Celiberti , Markus Aichhorn , Cesare Franchini

The electronic properties of paramagnetic V_2O_3 are investigated by the ab-initio computational scheme LDA+DMFT(QMC). This approach merges the local density approximation (LDA) with dynamical mean-field theory (DMFT) and uses numerically…

强关联电子 · 物理学 2009-10-31 K. Held , G. Keller , V. Eyert , D. Vollhardt , V. I. Anisimov

We report a detail theoretical study of the electronic structure and phase stability of transition metal oxides MnO, FeO, CoO, and NiO in their paramagnetic cubic B1 structure by employing dynamical mean-field theory of correlated electrons…

强关联电子 · 物理学 2016-10-26 I. Leonov , L. Pourovskii , A. Georges , I. A. Abrikosov

The doping induced insulator-metal transition in $La_{1-x}Sr_{x}TiO_{3}$ is studied using the ab-initio LDA+DMFT method. Combining the LDA bandstructure for the actual, distorted structure found recently with multi-orbital DMFT to treat…

强关联电子 · 物理学 2016-08-31 L. Craco , M. S. Laad , S. Leoni , E. Müller-Hartmann

The double-exchange model for the Mn oxides with orbital degeneracy is studied with including on-site Coulomb repulsion, Jahn-Teller (J-T) coupling and doping-induced disorder. In the strong interaction limit, it is mapped onto a…

强关联电子 · 物理学 2009-10-31 L. Sheng , D. N. Sheng , C. S. Ting

We present a detailed account of the physics of Vanadium sesquioxide (${\rm V_2O_3}$), a benchmark system for studying correlation induced metal-insulator transition(s). Based on a detailed perusal of a wide range of experimental data, we…

强关联电子 · 物理学 2009-11-11 M. S. Laad , L. Craco , E. Müller-Hartmann

Interfacial charge transfer in oxide heterostructures gives rise to a rich variety of electronic and magnetic phenomena. Designing heterostructures where one of the thin-film components exhibits a metal-insulator transition opens a…

The latent heat (L) associated with the orbital order-disorder transition at T_JT is found to depend significantly on the average particle size (d) of LaMnO3. It rises slowly with the decrease in d down to ~100 nm and then jumps by more…

强关联电子 · 物理学 2007-05-23 Nandini Das , Parthasarathi Mondal , Dipten Bhattacharya

We study the effects of an orbital magnetic field on the Mott metal-insulator transition in the Hubbard-Hofstadter model. We demonstrate that sufficiently large magnetic fields induce a Mott insulator-to-metal phase transition supporting…

强关联电子 · 物理学 2025-10-28 Georg Rohringer , Anton A. Markov