相关论文: Comprehensive and Macrospin-Based Magnetic Tunnel …

Spin filtering and its back-action spin transfer torque (STT) are key ingredients of latest spintronic devices based on magnetic tunnel junctions (MTJs). Resonant tunneling (RT), implemented by design or occurring as parasitic effects, is…

We report on a time-domain study of parametric synchronization in a magnetic tunnel junction based spin torque nano-oscillator (STNO). Time-domain measurements of the instantaneous frequency ($f_{i}$) of a parametrically synchronized STNO…

We study ns scale spin-torque-induced switching in perpendicularly magnetized tunnel junctions (pMTJ). Although the switching voltages match with the macrospin instability threshold, the electrical signatures of the reversal indicate the…

We introduce a method for a combined calculation of charge and vector spin transport of elastically tunneling electrons in magnetic scanning tunneling microscopy (STM). The method is based on the three-dimensional Wentzel-Kramers-Brillouin…

Stochastic dynamics of spin torque oscillators (STOs) can be described in terms of magnetization drift and diffusion over a current-dependent effective energy surface given by the Fokker-Planck equation. Here we present a method that…

The growing market and massive use of Internet of Things nodes is placing unprecedented demands of energy efficient hardware for edge computing and microwave devices. In particular, magnetic tunnel junctions (MTJs), as main building blocks…

Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer…

We study the charge and spin currents passing through a magnetic tunnel junction (MTJ) on the basis of a tight-binding model. The currents are evaluated perturbatively with respect to the tunnel Hamiltonian. The charge current has the form…

We investigate the dependence of perpendicular and parallel spin transfer torque (STT) and tunneling magnetoresistance (TMR) on the insulator barrier energy in the magnetic tunnel junction (MTJ). We employed single orbit tight binding model…

The discovery of spin torque transfer (STT) has lead to a significant advance in the development of spintronic devices. Novel structures and materials have been studied in order to improve the performance of the magnetic tunnel junctions…

Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an…

The spin torque oscillator (STO), where the magnetization of the fixed layer is tilted out of the film plane, is capable of strong microwave signal generation in zero magnetic field. Through numerical simulations of the…

Spin-polarized charge-currents induce magnetic tunnel junction (MTJ) switching by virtue of spin-transfer-torque (STT). Recently, by taking advantage of the spin dependent thermoelectric properties of magnetic materials, novel means of…

We present a compact model for Tunnel Field Effect Transistors (TFET), that captures sev- eral non-idealities such as the Trap Assisted Tunneling (TAT) originating from interface traps (Dit), along with Verilog-A implementation. We show…

We numerically study ultra fast resonant spin torque (ST) magnetization reversal in magnetic tunnelling junctions (MTJ) driven by current pulses having a direct current (DC) and a resonant alternating current (AC) component. The…

The collective dynamics in populations of magnetic spin torque oscillators (STO) is an intensely studied topic in modern magnetism. Here, we show that arrays of STO coupled via dipolar fields can be modeled using a variant of the Kuramoto…

We fabricated and characterized a new spin-functional MOSFET referred to as a pseudo-spin-MOSFET (PS-MOSFET). The PS-MOSFET is a circuit using an ordinary MOSFET and magnetic tunnel junction (MTJ) for reproducing functions of…

Multiple neuromorphic applications require the tuning of two or more devices to a common signal. Various types of neuromorphic computation can be realized using spintronic oscillators, where the DC current induces magnetization precession,…

The time domain stability of microwave spin torque oscillators (STOs) has been investigated by systematic micromagnetic simulations. A model based on internal spin wave reflection at grain boundaries with reduced exchange coupling was…

One of the biggest challenges the current STT-RAM industry faces is maintaining a high thermal stability while trying to switch within a given voltage pulse and energy cost. In this paper, we present a physics based analytical model that…