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相关论文: Raman spectra and electron-phonon coupling in diso…

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Previous studies of electron-phonon interaction in impure graphene have found that static disorder can give rise to an enhancement of electronic cooling. We investigate the effect of dynamic disorder and observe over an order of magnitude…

介观与纳米尺度物理 · 物理学 2015-06-22 Qi Han , Yi Chen , Gerui Liu , Dapeng Yu , Xiaosong Wu

Under homogeneous uniaxial strains, the Raman 2D band of graphene involving two-phonon double-resonance scattering processes splits into two peaks and they altogether redshift strongly depending on the direction and magnitude of the strain.…

介观与纳米尺度物理 · 物理学 2015-03-19 Duhee Yoon , Young-Woo Son , Hyeonsik Cheong

We investigate the signature of the low-energy electronic excitations in the Raman spectrum of monolayer and bilayer graphenes. The dominant contribution to the Raman spectra is due to the interband electron-hole pairs, which belong to the…

介观与纳米尺度物理 · 物理学 2012-12-12 Oleksiy Kashuba , Vladimir I. Fal'ko

We simulate the optical and electrical responses in gallium-doped graphene. Using density functional theory with a local density approximation, we simlutate the electronic band structure and show the effects of impurity doping (0-3.91\%) in…

As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of inter-valence band transitions on the zone center…

We present a self-consistent analysis of the photoemission spectral function A(k, w) of graphene monolayers grown epitaxially on SiC(0001). New information derived from spectral intensity anomalies (in addition to linewidths and peak…

The role of electron-phonon interactions is experimentally and theoretically investigated near the saddle point absorption peak of graphene. The differential optical transmission spectra of multiple, non-interacting layers of graphene…

We examine the intrinsic energy dissipation steps in electrically biased graphene channels. By combining in-situ measurements of the spontaneous optical emission with a Raman spectroscopy study of the graphene sample under conditions of…

介观与纳米尺度物理 · 物理学 2015-03-13 Stéphane Berciaud , Melinda Y. Han , Louis E. Brus , Philip Kim , Tony F. Heinz

We report multiphonon Raman scattering in graphene samples. Higher order combination modes involving 3 phonons and 4 phonons are observed in single-layer (SLG), bi-layer (BLG), and few layer (FLG) graphene samples prepared by mechanical…

介观与纳米尺度物理 · 物理学 2015-05-30 Rahul Rao , Derek Tishler , Jyoti Katoch , Masa Ishigami

Using density functional theory calculations we investigate the electronic structure of graphene doped by deposition of foreign atoms. We demonstrate that, as the charge transfer to the graphene layer increases, the band structure of the…

材料科学 · 物理学 2009-11-13 Matteo Calandra , Francesco Mauri

Far from resonance, the coupling of the G-band phonon to magneto-excitons in single layer graphene displays kinks and splittings versus filling factor that are well described by Pauli blocking and unblocking of inter- and intra- Landau…

介观与纳米尺度物理 · 物理学 2014-05-29 Sebastian Rémi , Bennett B. Goldberg , Anna K. Swan

Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…

介观与纳米尺度物理 · 物理学 2020-09-17 Giovanni Spinelli , Patrizia Lamberti , Vincenzo Tucci , Francisco Pasadas , David Jiménez

Experimentally, Raman continuum for $A_g$ and $B_g$ geometry exhibits peaks far apart from each other (about 80 to 150 $\rm cm^{-1}$) in frequency. The former is insensitive to doping over a small range where $T_c$ does not vary much…

凝聚态物理 · 物理学 2009-10-28 Haranath Ghosh , Manas Sardar

We demonstrate that charge density wave (CDW) phase transition occurs on the surface of electronically doped multilayer graphene when the Fermi level approaches the M points (also known as van Hove singularities where the density of states…

介观与纳米尺度物理 · 物理学 2016-11-04 Gen Long , Shuigang Xu , Ting Zhang , Zefei Wu , Wing Ki Wong , Tianyi Han , Jiangxiazi Lin , Yuan Cai , Ning Wang

The magneto-phonon resonance or MPR occurs in semiconductor materials when the energy spacing between Landau levels is continuously tuned to cross the energy of an optical phonon mode. MPRs have been largely explored in bulk semiconductors,…

材料科学 · 物理学 2015-06-04 Sarah Goler , Jun Yan , Vittorio Pellegrini , Aron Pinczuk

We report a high-pressure Raman spectroscopy study of a graphite-water mixture using water as the pressure-transmitting medium up to 9.9 GPa. In the graphite-rich region, three characteristic Raman features-the $E_{2g}^{(1)}$ shear mode,…

材料科学 · 物理学 2025-09-03 K. Perry , A. T. Roy , A. R. Parmenter , Y. J. Ryu , V. B. Prakapenka , J. Lim

Even weak van der Waals (vdW) adhesion between two-dimensional solids may perturb their various materials properties owing to their low dimensionality. Although the electronic structure of graphene has been predicted to be modified by the…

介观与纳米尺度物理 · 物理学 2013-10-31 Gwanghyun Ahn , Hye Ri Kim , Taeg Yeoung Ko , Kyoungjun Choi , Kenji Watanabe , Takashi Taniguchi , Byung Hee Hong , Sunmin Ryu

Raman spectroscopy is an integral part of graphene research. It is used to determine the number and orientation of layers, the quality and types of edge, and the effects of perturbations, such as electric and magnetic fields, strain,…

材料科学 · 物理学 2015-06-16 Andrea C. Ferrari , Denis M. Basko

We present high-quality optical data and density functional perturbation theory calculations for the vibrational spectrum of solid picene (C$_{22}$H$_{14}$) under pressure up to 8 GPa. First-principles calculations reproduce with a…

Graphene has exhibited a wealth of fascinating properties, but is also known not to be a superconductor. Remarkably, we show that graphene can be made a conventional Bardeen-Cooper-Schrieffer superconductor by the combined effect of charge…

超导电性 · 物理学 2013-08-13 Chen Si , Zheng Liu , Wenhui Duan , Feng Liu