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相关论文: Mott transition in granular aluminum

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The Mott metal-insulator transition-a drastic manifestations of Coulomb interactions among electrons-is the first-order transition of clear discontinuity, as shown by various experiments and the celebrated dynamical mean-field theory.…

强关联电子 · 物理学 2018-03-01 Tetsuya Furukawa , Kazuhiko Kobashi , Yosuke Kurosaki , Kazuya Miyagawa , Kazushi Kanoda

Pressure-temperature phase diagram of the organic Mott insulator $\kappa$-(ET)$_2$Cu$_2$(CN)$_3$, a model system of the spin liquid on triangular lattice, has been investigated by $^1$H NMR and resistivity measurements. The spin-liquid…

强关联电子 · 物理学 2007-05-23 Y. Kurosaki , Y. Shimizu , K. Miyagawa , K. Kanoda , G. Saito

Transport and magnetic properties have been systematically investigated for SmMnAsO_{1-x} with controlled electron-doping. As the electron band-filling is increased with the increase of oxygen deficiency (x), the resistivity monotonically…

强关联电子 · 物理学 2015-05-28 Y. Shiomi , S. Ishiwata , Y. Taguchi , Y. Tokura

We present a theoretical approach to describing the Mott transition of electrons on a two dimensional lattice that begins with the low energy effective theory of the Fermi liquid. The approach to the Mott transition must be characterized by…

强关联电子 · 物理学 2012-01-25 David F. Mross , T. Senthil

We study a bandwidth controlled Mott metal-insulator transition (MIT) between a Fermi liquid metal and a quantum spin-liquid insulator at half-filling in three dimensions (3D). Using a slave rotor approach, and incorporating gauge field…

强关联电子 · 物理学 2013-05-29 Daniel Podolsky , Arun Paramekanti , Yong Baek Kim , T. Senthil

One of the early triumphs of quantum physics is the explanation why some materials are metallic whereas others are insulating. While a treatment based on single electron states correctly predicts the character of most materials this…

强关联电子 · 物理学 2015-09-02 S. Friedemann , H. Chang , M. B. Gamża , P. Reiss , X. Chen , P. Alireza , W. A. Coniglio , D. Graf , S. Tozer , F. M. Grosche

We show that the normal state transport properties of nano-scale granular Aluminum films, near the metal to insulator transition, present striking similarities with those of Kondo systems. Those include a negative magneto-resistance, a…

超导电性 · 物理学 2013-08-08 N. Bachar , S. Lerer , S. Hacohen-Gourgy , B. Almog , G. Deutscher

The competition between antiferromagnetism and hole motion in two-dimensional Mott insulators lies at the heart of a doping-dependent transition from an anomalous metal to a conventional Fermi liquid. Condensed matter experiments suggest…

The metal-insulator transition in correlated electron systems, where electron states transform from itinerant to localized, has been one of the central themes of condensed matter physics for more than half a century. The persistence of this…

We report on the longitudinal magnetoresistance (MR) in thin metal films on an Ising-type antiferromagnetic insulator, Na5Co15.5Te6O36 (NCTO). Steep changes in the MR spectra with hysteresis were observed at spin-flip transitions driven by…

强关联电子 · 物理学 2026-05-04 Hirotsugu Tagami , Takuya Kawada , Yuki Shiomi

MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc~90K demonstrate transition from metallic to insulating state below To~10K, where sheet resistances Rsh~h/e2 and both longitudinal Rxx and transverse Rxy components become…

材料科学 · 物理学 2008-06-17 R. R. Gareev , A. Petukhov , M. Schlapps , M. Doeppe , J. Sadowski , M. Sperl , W. Wegscheider

Mott metal-insulator transitions possess electronic, magnetic, and structural degrees of freedom promising next generation energy-efficient electronics. We report a previously unknown, hierarchically ordered state during a Mott transition…

Mott insulators with a half-filled band of electrons on the triangular lattice have been recently studied in a variety of organic compounds. All of these compounds undergo transitions to metallic/superconducting states under moderate…

强关联电子 · 物理学 2008-05-09 Yang Qi , Subir Sachdev

Mott transition and ferrimagnetism are studied in the Hubbard model on the anisotropic kagom\'e lattice using the variational cluster approximation and the phase diagram at zero temperature and half-filling is analyzed. The ferrimagnetic…

强关联电子 · 物理学 2015-03-17 A. Yamada , K. Seki , R. Eder , Y. Ohta

In this study, we investigate the metal-insulator transition of charge transfer type in high-temperature cuprates. We first show that we must introduce a new band parameter in the three-band d-p model to reproduce the Fermi surface of high…

强关联电子 · 物理学 2014-08-05 Takashi Yanagisawa , Mitake Miyazaki

It has been reported that upon doping a Mott insulator, there can be a crossover to a pseudogaped metallic phase followed by a first-order transition to another thermodynamically stable metallic phase. We call this first-order metal-metal…

强关联电子 · 物理学 2024-09-16 P. -O. Downey , O. Gingras , C. -D. Hébert , M. Charlebois , A. -M. S. Tremblay

The Mott transition is usually considered as resulting from the divergence of the effective mass of the quasiparticle in the Fermi-liquid theory; the dispersion relation around the Fermi level is considered to become flat towards the Mott…

强关联电子 · 物理学 2020-10-26 Masanori Kohno

The correlation-driven Mott transition is commonly characterized by a drop in resistivity across the insulator-metal phase boundary; yet, the complex permittivity provides a deeper insight into the microscopic nature. We investigate the…

We study, using simulations the dynamical properties of complex ferromagnetic granular materials. The system of grains is modeled by a disordered two-dimensional lattice in which the grains are embedded, while the magnitude and direction of…

介观与纳米尺度物理 · 物理学 2011-11-10 Ran Itay , Shlomo Havlin , Richard Berkovits

We have investigated the temperature evolution of magnetism and its interrelation with structural parameters in perovskite-based layered compound Sr$_2$IrO$_4$, which is believed to be a $J_{eff}$ = 1/2 Mott insulator. The structural…

强关联电子 · 物理学 2014-12-15 Imtiaz Noor Bhatti , R. Rawat , A. Banerjee , A. K. Pramanik
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