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Phosphorene, an emerging elemental two-dimensional (2D) direct band gap semiconductor with fascinating structural and electronic properties distinctively different from other 2D materials such as graphene and MoS2, is promising for novel…

材料科学 · 物理学 2015-04-21 Yongqing Cai , Qingqing Ke , Gang Zhang , Yuan Ping Feng , Vivek B Shenoy , Yong-Wei Zhang

We report the quasiparticle band gap, excitons, and highly anisotropic optical responses of few-layer black phosphorous (phosphorene). It is shown that these new materials exhibit unique many-electron effects; the electronic structures are…

介观与纳米尺度物理 · 物理学 2014-06-27 Vy Tran , Ryan Soklaski , Yufeng Liang , Li Yang

We investigate theoretically the anisotropic electronic and optical behaviors of a monolayer black phosphorus (phosphorene) modulated by periodic potential superlattices in arbitrary directions. We demonstrate that different strength and…

介观与纳米尺度物理 · 物理学 2019-12-17 Xiaojing Li , Wen Yang , Kun Luo , Zhenhua Wu

The application of strain to 2D materials allows manipulating the electronic, magnetic, and thermoelectric properties. These physical properties are sensitive to slight variations induced by tensile and compressive strain and to the…

材料科学 · 物理学 2023-06-14 J. W. González

Using first-principles calculations and non-equilibrium Green's function method, we investigate the ballistic thermal transport in single-layer phosphorene. A significant crystallographic orientation dependence of thermal conductance is…

介观与纳米尺度物理 · 物理学 2017-04-18 Zhun-Yong Ong , Yongqing Cai , Gang Zhang , Yong-Wei Zhang

Strain engineering applied to carbon monosulphide monolayers allows to control the bandgap, controlling electronic and thermoelectric responses. Herein, we study the semiconductor-metal phase transition of this layered material driven by…

介观与纳米尺度物理 · 物理学 2019-02-05 Jhon W. González

The monolayer of black phosphorous, or phosphorene, has recently emerged as a new 2D semiconductor with intriguing highly anisotropic transport properties. Existing calculations of its intrinsic phonon-limited electronic transport…

材料科学 · 物理学 2015-06-24 Bolin Liao , Jiawei Zhou , Bo Qiu , Mildred S. Dresselhaus , Gang Chen

Phosphorene is a single elemental two-dimensional semiconductor that has quickly emerged as a high mobility material for transistors and optoelectronic devices. In addition, being a 2D material, it can sustain high levels of strain,…

介观与纳米尺度物理 · 物理学 2019-07-09 S. J. Ray , M. Venkata Kamalakar

The intrinsic carrier transport dynamics in phosphorene is theoretically examined. Utilizing a density functional theory treatment, the low-field mobility and the saturation velocity are characterized for both electrons and holes in the…

介观与纳米尺度物理 · 物理学 2016-08-24 Zhenghe Jin , Jeffrey T. Mullen , Ki Wook Kim

We investigate, based on the tight-binding model and in the linear deformation regime, the strain dependence of the electronic band structure of phosphorene, exposed to a uniaxial strain in one of its principle directions, the normal, the…

介观与纳米尺度物理 · 物理学 2015-12-21 Yawar Mohammadi , Borhan Arghavani Nia

Anisotropy describes the directional dependence of a material's properties such as transport and optical response. In conventional bulk materials, anisotropy is intrinsically related to the crystal structure, and thus not tunable by the…

材料科学 · 物理学 2017-02-10 Ting Cao , Zhenglu Li , Diana Y. Qiu , Steven G. Louie

We studied the electronic structure and optic absorption of phosphorene (monolayer of black phosphorus) under strain. Strain was found to be a powerful tool for the band structure engineering. The in-plane strain in armchair or zigzag…

介观与纳米尺度物理 · 物理学 2016-04-20 Houjian Duan , Mou Yang , Ruiqiang Wang

Phosphorene, the single- or few-layer form of black phosphorus, was recently rediscovered as a twodimensional layered material holding great promise for applications in electronics and optoelectronics. Research into its fundamental…

材料科学 · 物理学 2015-06-19 Liangzhi Kou , Changfeng Chen , Sean C. Smith

Recently fabricated two dimensional (2D) phosphorene crystal structures have demonstrated great potential in applications of electronics. Mechanical strain was demonstrated to be able to significantly modify the electronic properties of…

材料科学 · 物理学 2014-07-02 Qun Wei , Xihong Peng

Most recently, a brand new phosphorus allotrope called green phosphorus has been predicted, which has a direct band gap up to 2.4 eV, and its single-layer form termed green phosphorene shows high stability. Here the mechanical properties…

材料科学 · 物理学 2018-06-18 Guang Yang , Tianxing Ma , Xihong Peng

Using first principles calculations we showed that the electronic and optical properties of single layer black phosphorus (BP) depend strongly on the applied strain. Due to the strong anisotropic atomic structure of BP, its electronic…

介观与纳米尺度物理 · 物理学 2015-06-23 Deniz Çakır , Hasan Sahin , François M. Peeters

Optical and electronic properties of black phosphorus strongly depend on the number of layers and type of stacking. Using first-principles calculations within the framework of density functional theory, we investigate the electronic…

介观与纳米尺度物理 · 物理学 2017-09-07 Cem Sevik , John R. Wallbank , Oguz Gulseren , Francois M. Peeters , Deniz Cakır

Based on density functional simulations combined with the Landauer transport theory, the mechanical strain impacts on the chemical bonds of phosphorene and their effects on the electronic properties are studied. Moreover, the effect of the…

材料科学 · 物理学 2018-10-01 Zahra Nourbakhsh , Reza Asgari

We analyze the resonance energy transfer (RET) rate between quantum emitters (QEs) near a phosphorene/SiC interface under the effects of uniaxial strain. Using a low-energy tight-binding model, we describe the electronic structure of…

介观与纳米尺度物理 · 物理学 2025-05-20 J. Oliveira-Cony , C. Farina , P. P. Abrantes , Tarik P. Cysne

The electronic properties of monolayer phosphorene are exotic due to its puckered structure and large intrinsic direct band gap. We derive and discuss its band structure in the presence of a perpendicular magnetic field. Further, we…

介观与纳米尺度物理 · 物理学 2015-07-23 M. Tahir , P. Vasilopoulos , F. M. Peeters
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