中文
相关论文

相关论文: Fano Interference between a STM Tip and Mid Gap St…

200 篇论文

We use scanning tunneling microscopy to investigate the (001) surface of cleaved SmB6 Kondo insulator. Variable temperature dI/dV spectroscopy up to 60 K reveals a gap-like density of state suppression around the Fermi level, which is due…

材料科学 · 物理学 2014-04-02 Wei Ruan , Cun Ye , Minghua Guo , Fei Chen , Xianhui Chen , Guangming Zhang , Yayu Wang

We report quantum interference effects in the electrical conductance of chemical vapor deposited graphene nanoconstrictions fabricated using feedback controlled electroburning. The observed multimode Fabry-Perot interferences can be…

A new type of states in graphene-based planar heterojunctions has been studied in the envelope wave function approximation. The condition for the formation of these states is the intersection between the dispersion curves of graphene and…

介观与纳米尺度物理 · 物理学 2012-08-08 P. V. Ratnikov , A. P. Silin

The electronic properties of graphene can be modified by the local interaction with a selected metal substrate. To probe this effect, Scanning Tunneling Microscopy is widely employed, particularly by means of local measurement via lock-in…

介观与纳米尺度物理 · 物理学 2023-05-01 Virginia Carnevali , Alessandro Sala , Pietro Biasin , Mirco Panighel , Giovanni Comelli , Maria Peressi , Cristina Africh

When wave scattering systems are subject to certain symmetries, resonant states may decouple from the far-field continuum; they remain localized to the structure and cannot be excited by incident waves from the far field. In this work, we…

偏微分方程分析 · 数学 2021-10-27 Habib Ammari , Bryn Davies , Erik Orvehed Hiltunen , Hyundae Lee , Sanghyeon Yu

A theory is presented for the strong enhancement of graphene-on-substrate bandgaps by attractive interactions mediated through phonons in a polarizable superstrate. It is demonstrated that gaps of up to 1eV can be formed for experimentally…

强关联电子 · 物理学 2012-04-25 J. P. Hague

We have investigated the electronic structure and the Fermi surface of SnO using density functional theory (DFT) calculations within recently proposed exchange-correlation potential (PBE+mBJ) at ambient conditions and high pressures up to…

材料科学 · 物理学 2015-05-28 J. A. McLeod , A. V. Lukoyanov , E. Z. Kurmaev , L. D. Finkelstein , A. Moewes

We present an electrically driven plasmonic device consisting of a gold nanoparticle trapped in a gap between two electrodes. The tunneling current in the device generates plasmons, which decay radiatively. The emitted spectrum extends up…

介观与纳米尺度物理 · 物理学 2016-01-21 Yuval Vardi , Eyal Cohen-Hoshen , Guy Shalem , Israel Bar-Joseph

Proximity of two different materials leads to an intricate coupling of quasiparticles so that an unprecedented electronic state is often realized at the interface. Here, we demonstrate a resonance-type many-body ground state in graphene, a…

The conduction electron density of states nearby single magnetic impurities, as measured recently by scanning tunneling microscopy (STM), is calculated, taking into account tunneling into conduction electron states only. The Kondo effect…

强关联电子 · 物理学 2009-10-31 O. Újsághy , J. Kroha , L. Szunyogh , A. Zawadowski

We examine theoretically the signatures of magnetic adatoms in graphene probed by scanning tunneling spectroscopy (STS). When the adatom hybridizes equally with the two graphene sublattices, the broadening of the local adatom level is…

强关联电子 · 物理学 2009-11-11 Bruno Uchoa , Ling Yang , S. -W. Tsai , N. M. R. Peres , A. H. Castro Neto

We manipulate optical Tamm states in graphene-based photonics to achieve and steer large magneto-optical effects. Here we report the presence of a giant Faraday rotation via a single graphene layer of atomic thickness while keeping a high…

Fano resonances are ubiquitous phenomena appearing in many fields of physics, e.g. atomic or molecular photoionization, or electron transport in quantum dots. Recently, attosecond interferometric techniques have been used to measure the…

Optically active defects often play a crucial role in governing the light emission as well as the electronic properties of materials. Moreover, defect-mediated states in the mid-gap region can trap electrons, thus opening a path for the…

材料科学 · 物理学 2025-01-03 Aprajita Joshi , Sajid Saikia , Shalini Badola , Angshuman Nag , Surajit Saha

We present an approach to monitor and control the strength of the hybridization between electronic states of graphene and metal surfaces. Inspecting the distribution of the $\pi$ band in a high-quality graphene layer synthesized on Ni(111)…

材料科学 · 物理学 2008-03-20 Alexander Gruneis , Denis Vyalikh

Density functional theory (DFT) and many body perturbation theory at the G$_0$W$_0$ level are employed to study the electronic properties of polythiophene (PT) adsorbed on graphene surface. Analysis of charge density difference shows the…

介观与纳米尺度物理 · 物理学 2017-09-07 F. Marsusi , I. A. Fedorov , S. Gerivani

Magneto-Raman scattering experiments from the surface of graphite reveal novel features associated to purely electronic excitations which are observed in addition to phonon-mediated resonances. Graphene-like and graphite domains are…

介观与纳米尺度物理 · 物理学 2015-05-27 C. Faugeras , M. Amado , P. Kossacki , M. Orlita , M. Kühne , A. A. L. Nicolet , Yu. I. Latyshev , M. Potemski

Strain has been extensively employed to tailor graphene's properties and has emerged as a powerful tool for engineering gauge fields and exploring fundamental phenomena in artificial platforms like photonic graphene. Here we discover that,…

光学 · 物理学 2025-09-26 Yongsheng Liang , Shiqi Xia , Daohong Song , Hrvoje Buljan , Zhigang Chen

We consider the theory of Kondo effect and Fano factor energy dependence for magnetic impurity (Co) on graphene. We have performed a first principles calculation and find that the two dimensional $E_1$ representation made of $d_{xz},d_{yz}$…

介观与纳米尺度物理 · 物理学 2009-06-16 T. O. Wehling , H. P. Dahal , A. I. Lichtenstein , M. I. Katsnelson , H. Manoharan , A. V. Balatsky

As the silicon industry continues to push the limits of device dimensions, tools such as Raman spectroscopy are ideal to analyze and characterize the doped silicon channels. The effect of inter-valence band transitions on the zone center…