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相关论文: Crossover regimes in lower dimensional structures

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We have studied the transition from two to three dimensions in a low temperature weakly interacting $^6$Li Fermi gas. Below a critical atom number, $N_{2D}$, only the lowest transverse vibrational state of a highly anisotropic oblate…

量子气体 · 物理学 2011-03-16 P. Dyke , E. D. Kuhnle , S. Whitlock , H. Hu , M. Mark , S. Hoinka , M. Lingham , P. Hannaford , C. J. Vale

Quantum materials near electronic or magnetic phase boundaries exhibit enhanced tunability, as their emergent properties become highly sensitive to external perturbations. Here, we demonstrate precise control of ferromagnetism in a…

强关联电子 · 物理学 2026-01-05 Jinyoung Kim , Minjae Kim , Donghan Kim , Sungsoo Hahn , Younsik Kim , Minsoo Kim , Byungmin Sohn , Changyoung Kim

Correlations between electrons and the effective dimensionality are crucial factors that shape the properties of an interacting electron system. For example, the onsite Coulomb repulsion, U, may inhibit, or completely block the intersite…

强关联电子 · 物理学 2007-05-23 T. Valla , P. D. Johnson , Z. Yusof , B. Wells , Q. Li , S. M. Loureiro , R. J. Cava , M. Mikami , Y. Mori , M. Yoshimura , T. Sasaki

It is known that many-body correlations qualitatively modify the properties of a one-dimensional metal. However, for a quasi-one-dimensional metal these correlations are suppressed, at least partially. We study conditions under which the…

强关联电子 · 物理学 2012-11-15 A. V. Rozhkov

We study the effect of electron-electron interaction on the one-particle density of states (\emph{DOS}) $\rho^{(d)}(\epsilon,T)$ of low-dimensional disordered metals near Fermi energy within the framework of the finite temperature…

强关联电子 · 物理学 2015-05-14 E. Sasioglu , S. Caliskan , M. Kumru

High-resolution angle-resolved photoemission spectroscopy (ARPES) data reveal evidence of a crossover from one-dimensional (1D) to three-dimensional (3D) behavior in the prototypical charge density wave (CDW) material NbSe3. In the…

The electronic density of states (DOS) quantifies the distribution of the energy levels that can be occupied by electrons in a quasiparticle picture, and is central to modern electronic structure theory. It also underpins the computation…

材料科学 · 物理学 2021-01-04 Chiheb Ben Mahmoud , Andrea Anelli , Gábor Csányi , Michele Ceriotti

We use angle-resolved photoemission spectroscopy (ARPES) to study the electronic properties of CaFe2As2 - parent compound of a pnictide superconductor. We find that the structural and magnetic transition is accompanied by a three- to…

The electronic structures of the ground state for several different superconducting materials, such as cuprates, conventional 3-dimensional superconductors, doped semiconductors and low-dimensional systems, are quite different and sometimes…

超导电性 · 物理学 2014-12-18 T. Jarlborg

The electronic energy structures and magnetic properties of layered superconductors $R$Ni$_2$B$_2$C, $R$Fe$_4$Al$_8$ and FeSe are systematically studied, by using the density functional theory (DFT). The calculations allowed us to reveal a…

超导电性 · 物理学 2014-04-04 G. E. Grechnev , A. V. Logosha , A. A. Lyogenkaya , A. G. Grechnev , A. V. Fedorchenko

Electronic density of states (DOS) at Fermi level has been investigated in ultrathin Ag films grown on Si(111)-(7x7) down to the two dimensional limit of a single atomic layer. Measurement of DOS at Fermi level by scanning tunneling…

介观与纳米尺度物理 · 物理学 2014-12-04 R. Batabyal , A. H. M. Abdul Wasey , J. C. Mahato , Debolina Das , G. P. Das , B. N. Dev

Transition-edge sensors (TESs) can be used in high-resolution photon detection, exploiting the steep slope of the resistance in the superconducting-to-normal transition edge. Normal metal bars on the TES film are commonly used to engineer…

仪器与探测器 · 物理学 2019-09-04 Daikang Yan , Lisa M. Gades , Tejas Guruswamy , Antonino Miceli , Umeshkumar M. Patel , Orlando Quaranta

We study the influence of electron-electron interactions on the density of states (DOS) of clean 2D electron gas. We confirm the linear cusp in the DOS around the Fermi level, which was obtained previously. The cusp crosses over to a pure…

强关联电子 · 物理学 2009-11-10 E. Kogan , B. Rosenstein

We theoretically explore the crossover from three dimensions (3D) to two (2D) in a strongly interacting atomic Fermi superfluid through confining the transverse spatial dimension. Using the gaussian pair fluctuation theory, we determine the…

量子气体 · 物理学 2017-10-18 Umberto Toniolo , Brendan C. Mulkerin , Chris J. Vale , Xia-Ji Liu , Hui Hu

The divergence of the electron density of states (DOS) plays an important role in enhancing many-body interactions and inducing various quantum phases in low-dimensional systems. However, such unique electronic structures remain…

Intriguing phenomenon of dimensional crossover is comprehensively studied by experimental and theoretical investigation of electronic structure in quasi-one-dimensional hollandite K$_{2}$Ru$_{8}$O$_{16}$. Valence band photoemission spectra…

强关联电子 · 物理学 2025-06-13 Asif Ali , Sakshi Bansal , B. H. Reddy , Ravi Shankar Singh

We consider the effect of Coulomb interactions on the average density of states (DOS) of disordered low-dimensional metals for temperatures T and frequencies omega smaller than the inverse elastic life-time. Using the fact that long-range…

强关联电子 · 物理学 2009-11-07 Lorenz Bartosch , Peter Kopietz

Nearly magnetic metals often have layered lattice structures, consisting of coupled planes. In such a situation, physical properties will display, upon decreasing temperature or energy, a dimensional crossover from two-dimensional (2d) to…

强关联电子 · 物理学 2009-11-13 Markus Garst , Lars Fritz , Achim Rosch , Matthias Vojta

We study the tunneling density of states (DOS) in an interacting disordered three-dimensional metal and calculate its energy dependence in the quasiballistic regime, for the deviation from the Fermi energy, $E-E_F$, exceeding the elastic…

介观与纳米尺度物理 · 物理学 2020-02-18 Daniil S. Antonenko , Mikhail A. Skvortsov

Studies of different experimental groups that explore the properties of a two-dimensional electron gas in silicon semiconductor systems ((100) Si metal-oxide-semiconductor field-effect transistors (MOSFETs) and (100) SiGe/Si/SiGe quantum…

强关联电子 · 物理学 2019-10-15 V. T. Dolgopolov
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